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film formed by a hyperthermal O-atom beam at room temperatureTagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Hachiue, Shunsuke; Yoshigoe, Akitaka; Teraoka, Yuden
Japanese Journal of Applied Physics, 44(12), p.8300 - 8304, 2005/12
Times Cited Count：5 Percentile：21.43(Physics, Applied)Si oxide layers formed on Si(001) substrates by irradiation of hyperthermal oxygen atomic beams at room temperature were analysed at the JAERI soft X-ray beamline by photoemission spectroscopy. It was found that sub-oxide components were scarcely observed in the Si oxide layers formed by the atomic oxygen beam.
/Si(001) by N
beam irradiationHachiue, Shunsuke; Teraoka, Yuden
Shinku, 48(5), p.343 - 345, 2005/05
Silicon oxynitride layers were formed by irradiation of nitrogen ion beams at silicon substrates with ultrathin oxide layers. The nitrogen beam was mass-selected N ion beam. The translational kinetic energy was about 3 keV. The dose was 6.3
10
ions/cm
. This value is almost equal to the atom density at the Si(001) surface. Chemical bonding states of irradiated nitrogen atoms were analyzed by photoemission spectroscopy with synchrotron radiation. Although the nitrogen dose was a low density, N-1s photoemission spectra could be deconvoluted into four peaks. The chemical bonding state of each peak was assigned with a reference of a oxide layer thickness dependence of the N-1s photoemission peak profile.
Hachiue, Shunsuke; Teraoka, Yuden
JAERI-Tech 2004-066, 69 Pages, 2004/11
JAERI-Tech-2004-066.pdf:7.44MB
In order to progress chemical reaction studies at verious material surfaces using high speed and reactive ions and neutral particles beams, a high-speed neutral atomic and molecular beam apparatus has been developed. In this report, details of the apparatus and characteristics of actually-generated oxygen atomic and molecular ion/neutral beams are discribed. This apparatus is a ultra-high vacuum system consisting of a plasma ion source, electrostatic lens systems, a mass separator, and a charge transfer chamber. Total oxygen ion currents of 52 microamps at accerelation energy of 8 keV and 17 microamps even at 20 eV were obtained. Mass separation was also good so that an oxygen molecular ion beam of 11 microamps and an oxygen atomic ion beam of 5.5 microamps were obtained even at 20 eV. A neutral oxygen atomic or molecular beam was also generated with the flux density of 10
particles/cm/s.
Ogawa, Shuichi*; Takakuwa, Yuji*; Ishizuka, Shinji*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke; Hachiue, Shunsuke
JAERI-Tech 2004-046, 25 Pages, 2004/06
JAERI-Tech-2004-046.pdf:2.51MB
We investigated the correlation between initial sticking coefficient and O transitional kinetic energy to understand O adsorption processes on the Ti(0001) surface via photoemission spectroscopy for O-1s and Ti-2p core levels using the surface reaction analysis apparatus, installed at the JAERI soft X-ray beamline BL23SU in the SPring-8. We observed the decrease of initial sticking coefficient of O molecules on the Ti(0001) surface with increasing O transitional kinetic energy. We concluded that the O adsorption on the Ti(0001) surface proceeded by a trapping-mediated dissociative adsorption mechanism. The constant dependence of the initial sticking coefficient on incident angle of O beams also suggested the propriety of the trapping-mediated surface reaction mechanism.
thin film on Si(001) by irradiation of N ion beamsTeraoka, Yuden; Hachiue, Shunsuke; Yokota, Kumiko*; Tagawa, Masahito*
no journal, ,
The mass-selected atomic nitrogen ion beams with a kinetic energy of 3 keV were irradiated at the ultra-thin silicon dioide overlayers on Si(001) substrates by 6.310
to 2.010
particles/cm at room temperature. Chemical bonding states of Si, O, and N atoms were analyzed via photoemission spectroscopy using high brilliance and energy-resolution synchrotron radiation. Photoemission spectra of N-1s core level could be observed in addition to Si-2p and O-1s peaks owing to the high brilliance synchrotron radiation. It was found that the silicon dioide overlayer and the interface were effectively nitrided even by the dose of 10 particles/cm order as well as the Si(001) substrate.
