The Investigation and consideration for introduction of surface contamination evaluation method based on JIS

Usui, Toshihide; Takashima, Hideki; Iwasa, Atsutoshi; Hamazaki, Masaaki

Proceedings of 3rd Asian and Oceanic Congress on Radiation Protection (AOCRP-3) (CD-ROM), 3 Pages, 2010/05

X-ray diffraction topography on ferroelectric materials

Yoneda, Yasuhiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*; Mizuki, Junichiro

Transactions of the Materials Research Society of Japan, 30(1), p.51 - 54, 2005/03

no abstracts in English

X-ray diffraction topography on a BaTiO crystal

Yoneda, Yasuhiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*

Journal of the Physical Society of Japan, 73(4), p.1050 - 1053, 2004/04

https://doi.org/10.1143/JPSJ.73.1050

We have observed 90 C domain walls in a bulk BaTiO crystal by Synchrotron radiation topography, coupled with a CCD detector. The BaTiO multi-domain crystal was revealed to be strained at the 90 C domain boundary. The polar direction of the BaTiO crystal was tilted by this starin, and this strain also causes the irregular angle of the surface bending mode. The Synchrotron X-ray topography can be performed on a sample with electrodes. The topographic image of the ferroelectric doamin with an electric field clarified that the well-known stripe domain configuration can not be observed without a weak electric field due to the lattice strain at the doamin boundary.

Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*

Applied Physics Letters, 83(2), p.275 - 277, 2003/07

https://doi.org/10.1063/1.1592000

We observed an intermediate structure during the re-crystallization process from the amorphous state of BiTiO prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore BiTiO phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of BiO, some are inserted between the pseudo-perovskite layers of BiTiO, and a non-stoichiometric BiWO-like structure is stabilized.

Temporal facility radiation control activities in JAEA research reactor plants under ascended radiation levels due to the accident of Fukushima Daiichi Nuclear Plants

Irokawa, Hiroyuki; Hamazaki, Masaaki; Ishida, Keiichi; Miura, Yoshiyuki; Iwasa, Atsutoshi; Kano, Yutaka; Mikami, Satoshi; Takashima, Hideki; Hitomi, Junichi

no journal, , 

no abstracts in English

Radiation management for work in hot cell contaminated by high level radioactive materials

Nakayama, Naoto; Iwasa, Atsutoshi; Hamazaki, Masaaki; Sumiya, Yoshinobu*; Ogiya, Takashi; Irokawa, Hiroyuki; Kano, Yutaka; Takashima, Hideki; Hitomi, Junichi

no journal, , 

no abstracts in English

Characterization of removal factor of materials used for smear method on house material

Hamazaki, Masaaki; Mori, Airi; Abe, Haruka; Goibuchi, Shota; Iwasa, Atsutoshi; Ishida, Keiichi; Usui, Toshihide; Eguchi, Kazutoshi; Nakada, Akira

no journal, , 

no abstracts in English