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Yokoyama, Akihito; Kada, Wataru*; Sato, Takahiro; Koka, Masashi; Shimada, Keisuke*; Yokota, Yuya*; Miura, Kenta*; Hanaizumi, Osamu*
Nuclear Instruments and Methods in Physics Research B, 371, p.340 - 343, 2016/03
Times Cited Count：6 Percentile：45.92(Instruments & Instrumentation)no abstracts in English
Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi
Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11
Times Cited Count：12 Percentile：45.41(Materials Science, Multidisciplinary)Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11
Kada, Wataru*; Kambayashi, Yuya*; Miura, Kenta*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hanaizumi, Osamu*
Key Engineering Materials, 643, p.15 - 19, 2015/05
Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04
Times Cited Count：4 Percentile：30.80(Instruments & Instrumentation)Kada, Wataru*; Miura, Kenta*; Kato, Hijiri*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Kamiya, Tomihiro; Nishikawa, Hiroyuki*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.218 - 222, 2015/04
Times Cited Count：8 Percentile：52.78(Instruments & Instrumentation)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Kiryu, Hiromu*; Ozawa, Yusuke*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 126, 2013/01
Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Kiryu, Hiromu*; Ozawa, Yusuke*; Koka, Masashi; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
Key Engineering Materials, 534, p.158 - 161, 2013/00
Times Cited Count：5 Percentile：88.64(Nanoscience & Nanotechnology)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Uehara, Masato*; Kiryu, Hiromu*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2011-043, JAEA Takasaki Annual Report 2010, P. 126, 2012/01
m band using focused proton beamMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2012/00
Times Cited Count：7 Percentile：94.42(Engineering, Electrical & Electronic)m band using focused proton beamMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2011/12
Times Cited Count：6 Percentile：2.48
layersUmenyi, A. V.*; Hommi, Masashi*; Kawashiri, Shinya*; Shinagawa, Teruyoshi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito
Key Engineering Materials, 459, p.168 - 172, 2011/04
A new type of two-dimensional photonic crystal (2-D PhC) waveguide was designed using finite difference time domain method to operate at a wavelength of 1.55 m applicable to optical fiber-communication systems. We estimated that a triangular-lattice 2-D PhC structure formed by air holes with a diameter of 465 nm and a period of 664 nm suit our purpose. To form a core of the waveguide, Si ions were implanted into a SiO layer by using a 400-kV ion implanter. The implantation energy was 80 keV and the implantation amount was 1
10
ions/cm
. The electron beam resist was spin-coated on a substrate and the designed pattern was written lithographically in the resist using Electron Beam. Atomic force microscope measurements revealed that the diameter and the period of air holes of the waveguide were 466 and 666 nm. These values were nearly equal to the designed ones. We thus succeeded in fabricating 2-D PhC waveguides in a Si-ion-implanted SiO layer.
Miura, Kenta*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Takano, Katsuyoshi; Kada, Wataru; Yamazaki, Akiyoshi; Yokoyama, Akihito; Kamiya, Tomihiro; Uehara, Masato*; et al.
no journal, ,
no abstracts in English
m wavelength range fabricated by proton beam writingMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
substrates implanted with Ge ionsShinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito
no journal, ,
Light emission between ultraviolet and blue from SiO substrates implanted with Ge ions in comparatively shallow depth (
100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO substrates implanted with Ge ions deeper than previous works (200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO substrate with 350 keV, and the implantation amount was 110 ions/cm. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 
C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO substrates with photonic crystal characteristics has risen.
Miura, Kenta*; Hommi, Masashi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Sugimoto, Masaki; Yoshikawa, Masahito; Inoue, Aichi
no journal, ,
no abstracts in English
-wavelength range by using proton beam writing, 2Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
Miura, Kenta*; Tanemura, Tsuyoshi*; Hommi, Masashi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Takano, Katsuyoshi; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
no abstracts in English
Miura, Kenta*; Kada, Wataru*; Saruya, Ryota*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Koka, Masashi; Yokoyama, Akihito; Sato, Takahiro; Kamiya, Tomihiro
no journal, ,
no abstracts in English
substrates implanted with Si and C ionsInada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito
no journal, ,
It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 5.010
ions/cm. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.
