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Yokoyama, Akihito; Kada, Wataru*; Sato, Takahiro; Koka, Masashi; Shimada, Keisuke*; Yokota, Yuya*; Miura, Kenta*; Hanaizumi, Osamu*
Nuclear Instruments and Methods in Physics Research B, 371, p.340 - 343, 2016/03
Times Cited Count:6 Percentile:45.92(Instruments & Instrumentation)no abstracts in English
Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi
Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11
Times Cited Count:12 Percentile:45.41(Materials Science, Multidisciplinary)Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11
Kada, Wataru*; Kambayashi, Yuya*; Miura, Kenta*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hanaizumi, Osamu*
Key Engineering Materials, 643, p.15 - 19, 2015/05
Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04
Times Cited Count:4 Percentile:30.80(Instruments & Instrumentation)Kada, Wataru*; Miura, Kenta*; Kato, Hijiri*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Kamiya, Tomihiro; Nishikawa, Hiroyuki*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.218 - 222, 2015/04
Times Cited Count:8 Percentile:52.78(Instruments & Instrumentation)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Kiryu, Hiromu*; Ozawa, Yusuke*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 126, 2013/01
Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Kiryu, Hiromu*; Ozawa, Yusuke*; Koka, Masashi; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
Key Engineering Materials, 534, p.158 - 161, 2013/00
Times Cited Count:5 Percentile:88.64(Nanoscience & Nanotechnology)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Uehara, Masato*; Kiryu, Hiromu*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2011-043, JAEA Takasaki Annual Report 2010, P. 126, 2012/01
Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2012/00
Times Cited Count:7 Percentile:94.42(Engineering, Electrical & Electronic)Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2011/12
Times Cited Count:6 Percentile:2.48Umenyi, A. V.*; Hommi, Masashi*; Kawashiri, Shinya*; Shinagawa, Teruyoshi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito
Key Engineering Materials, 459, p.168 - 172, 2011/04
A new type of two-dimensional photonic crystal (2-D PhC) waveguide was designed using finite difference time domain method to operate at a wavelength of 1.55 m applicable to optical fiber-communication systems. We estimated that a triangular-lattice 2-D PhC structure formed by air holes with a diameter of 465 nm and a period of 664 nm suit our purpose. To form a core of the waveguide, Si ions were implanted into a SiO
layer by using a 400-kV ion implanter. The implantation energy was 80 keV and the implantation amount was 1
10
ions/cm
. The electron beam resist was spin-coated on a substrate and the designed pattern was written lithographically in the resist using Electron Beam. Atomic force microscope measurements revealed that the diameter and the period of air holes of the waveguide were 466 and 666 nm. These values were nearly equal to the designed ones. We thus succeeded in fabricating 2-D PhC waveguides in a Si-ion-implanted SiO
layer.
Miura, Kenta*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Takano, Katsuyoshi; Kada, Wataru; Yamazaki, Akiyoshi; Yokoyama, Akihito; Kamiya, Tomihiro; Uehara, Masato*; et al.
no journal, ,
no abstracts in English
Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
Shinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito
no journal, ,
Light emission between ultraviolet and blue from SiO substrates implanted with Ge ions in comparatively shallow depth (
100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO
substrates implanted with Ge ions deeper than previous works (
200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO
substrate with 350 keV, and the implantation amount was 1
10
ions/cm
. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900
C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO
substrates with photonic crystal characteristics has risen.
Miura, Kenta*; Hommi, Masashi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Sugimoto, Masaki; Yoshikawa, Masahito; Inoue, Aichi
no journal, ,
no abstracts in English
Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
Miura, Kenta*; Tanemura, Tsuyoshi*; Hommi, Masashi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Takano, Katsuyoshi; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
no abstracts in English
Miura, Kenta*; Kada, Wataru*; Saruya, Ryota*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Koka, Masashi; Yokoyama, Akihito; Sato, Takahiro; Kamiya, Tomihiro
no journal, ,
no abstracts in English
Inada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito
no journal, ,
It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO
substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO
substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was
5.0
10
ions/cm
. The C-ion implantation energy was 75 keV, and the implantation dose was
3.0
10
ions/cm
. The samples were subsequently annealed at 700
C for 25 min in air, after 1000
C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.