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Yokoyama, Akihito; Kada, Wataru*; Sato, Takahiro; Koka, Masashi; Shimada, Keisuke*; Yokota, Yuya*; Miura, Kenta*; Hanaizumi, Osamu*
Nuclear Instruments and Methods in Physics Research B, 371, p.340 - 343, 2016/03
Times Cited Count：6 Percentile：48.81(Instruments & Instrumentation)no abstracts in English
Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi
Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11
Times Cited Count：11 Percentile：44.60(Materials Science, Multidisciplinary)Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11
Kada, Wataru*; Kambayashi, Yuya*; Miura, Kenta*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hanaizumi, Osamu*
Key Engineering Materials, 643, p.15 - 19, 2015/05
Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04
Times Cited Count：4 Percentile：32.74(Instruments & Instrumentation)Kada, Wataru*; Miura, Kenta*; Kato, Hijiri*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Kamiya, Tomihiro; Nishikawa, Hiroyuki*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.218 - 222, 2015/04
Times Cited Count：6 Percentile：45.29(Instruments & Instrumentation)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Kiryu, Hiromu*; Ozawa, Yusuke*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 126, 2013/01
Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Kiryu, Hiromu*; Ozawa, Yusuke*; Koka, Masashi; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
Key Engineering Materials, 534, p.158 - 161, 2013/00
Times Cited Count：5 Percentile：89.67(Nanoscience & Nanotechnology)Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Uehara, Masato*; Kiryu, Hiromu*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; Kada, Wataru; et al.
JAEA-Review 2011-043, JAEA Takasaki Annual Report 2010, P. 126, 2012/01
m band using focused proton beamMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2012/00
Times Cited Count：7 Percentile：94.99(Engineering, Electrical & Electronic)m band using focused proton beamMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.
Key Engineering Materials, 497, p.147 - 150, 2011/12
Times Cited Count：6 Percentile：2.48
layersUmenyi, A. V.*; Hommi, Masashi*; Kawashiri, Shinya*; Shinagawa, Teruyoshi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito
Key Engineering Materials, 459, p.168 - 172, 2011/04
A new type of two-dimensional photonic crystal (2-D PhC) waveguide was designed using finite difference time domain method to operate at a wavelength of 1.55 m applicable to optical fiber-communication systems. We estimated that a triangular-lattice 2-D PhC structure formed by air holes with a diameter of 465 nm and a period of 664 nm suit our purpose. To form a core of the waveguide, Si ions were implanted into a SiO layer by using a 400-kV ion implanter. The implantation energy was 80 keV and the implantation amount was 1
10
ions/cm
. The electron beam resist was spin-coated on a substrate and the designed pattern was written lithographically in the resist using Electron Beam. Atomic force microscope measurements revealed that the diameter and the period of air holes of the waveguide were 466 and 666 nm. These values were nearly equal to the designed ones. We thus succeeded in fabricating 2-D PhC waveguides in a Si-ion-implanted SiO layer.
Miura, Kenta*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Takano, Katsuyoshi*; Okubo, Takeru; Yamazaki, Akiyoshi; et al.
no journal, ,
Miura, Kenta*; Hommi, Masashi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Sugimoto, Masaki; Yoshikawa, Masahito; Inoue, Aichi
no journal, ,
no abstracts in English
substrates implanted with Ge ionsShinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito
no journal, ,
Light emission between ultraviolet and blue from SiO substrates implanted with Ge ions in comparatively shallow depth (
100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO substrates implanted with Ge ions deeper than previous works (200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO substrate with 350 keV, and the implantation amount was 110 ions/cm. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 
C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO substrates with photonic crystal characteristics has risen.
Umenyi, A. V.*; Hommi, Masashi*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Inoue, Aichi; Yoshikawa, Masahito
no journal, ,
Various works on silicon (Si)-based luminescent materials utilizing the quantum confinement effect, such as Si nanocrystals (Si-NC's), have been reported. Typical fabrication methods of Si-NC's are co-sputtering of Si and SiO, Si-ion implantation into SiO plates, and so on. In this work, we observed ultraviolet (UV)-light emission from Si-ion-implanted fused-silica substrates under different implanting conditions. The implantation energy was 80 keV, and the implantation amount was 210 ions/cm. The Si-implanted substrates were annealed at 11001250C. Photoluminescence (PL) spectra were measured with excitation using a He-Cd laser. UV-PL spectra having peaks around a wavelength of 370 nm were observed from all the samples. The UV-peak wavelengths of the samples are almost the same in spite of the various annealing temperatures. Si-ion-implanted fused-silica are expected to be useful as light sources for next-generation optical-disk systems.
Miura, Kenta*; Tanemura, Tsuyoshi*; Hanaizumi, Osamu*; Yamamoto, Shunya; Takano, Katsuyoshi; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
no abstracts in English
-wavelength range by using proton beam writing, 2Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
Miura, Kenta*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Takano, Katsuyoshi; Kada, Wataru; Yamazaki, Akiyoshi; Yokoyama, Akihito; Kamiya, Tomihiro; Uehara, Masato*; et al.
no journal, ,
no abstracts in English
m-wavelength range by using proton beam writingMiura, Kenta*; Machida, Yuki*; Uehara, Masato*; Hanaizumi, Osamu*; Ishii, Yasuyuki; Sato, Takahiro; Takano, Katsuyoshi; Okubo, Takeru; Yamazaki, Akiyoshi; Inoue, Aichi; et al.
no journal, ,
no abstracts in English
