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Journal Articles

Superdeformation in $$^{35}$$S

Go, Shintaro*; Ideguchi, Eiji*; Yokoyama, Rin*; Kobayashi, Motoki*; Kisamori, Keiichi*; Takaki, Motonobu*; Miya, Hiroyuki*; Ota, Shinsuke*; Michimasa, Shinichiro*; Shimoura, Susumu*; et al.

JPS Conference Proceedings (Internet), 6, p.030005_1 - 030005_4, 2015/06

https://doi.org/10.7566/JPSCP.6.030005

Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

https://doi.org/10.4028/www.scientific.net/MSF.778-780.414
 Times Cited Count：2 Percentile：72.7(Crystallography)

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

Journal Articles

Superdeformed band in asymmetric N $$>$$ Z nucleus, $$^{40}$$Ar and high-spin states in A = 30 $$sim$$ 40 nuclei

Ideguchi, Eiji*; Ota, Shinsuke*; Morikawa, Tsuneyasu*; Oshima, Masumi; Koizumi, Mitsuo; Toh, Yosuke; Kimura, Atsushi; Harada, Hideo; Furutaka, Kazuyoshi; Nakamura, Shoji; et al.

Progress of Theoretical Physics Supplement, (196), p.427 - 432, 2012/10

https://doi.org/10.1143/PTPS.196.427

Journal Articles

Superdeformation in asymmetric $$N$$$$>$$$$Z$$ nucleus $$^{40}$$Ar

Ideguchi, Eiji*; Ota, Shinsuke*; Morikawa, Tsuneyasu*; Oshima, Masumi; Koizumi, Mitsuo; Toh, Yosuke; Kimura, Atsushi; Harada, Hideo; Furutaka, Kazuyoshi; Nakamura, Shoji; et al.

Physics Letters B, 686(1), p.18 - 22, 2010/03

https://doi.org/10.1016/j.physletb.2010.02.031
 Times Cited Count：36 Percentile：86.72(Astronomy & Astrophysics)

A rotational band with five $$gamma$$-ray transitions ranging from 2$$^+$$ to 12$$^+$$ states was identified in $$^{40}$$Ar. The deduced transition quadrupole moment of 1.45 $$pm$$0.15 eb indicates that the band has a superdeformed shape. The nature of the band is revealed by cranked Hartee Fock Bogoliubov calculations and a multiparticle-multihole configuration is assigned to the band.

Oral presentation

Electrically detected magnetic spectroscopy on interface defects in 4H-SiC (000-1) C-face metal-oxide-semiconductor field effect transistors

Umeda, Takahide*; Sato, Yoshihiro*; Arai, Ryo*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Electrically detected magnetic resonance study on hydrogen depassivation from C-face interface defects in 4H-SiC(000$$bar{1}$$) metal-oxide-semiconductor field effect transistors

Arai, Ryo*; Umeda, Takahide*; Sato, Yoshihiro*; Okamoto, Mitsuo*; Harada, Shinsuke*; Kosugi, Ryoji*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

6 (Records 1-6 displayed on this page)
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