Refine your search:     
Report No.
 - 
Search Results: Records 1-11 displayed on this page of 11
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Observation of iron silicide formation by plan-view transmission electron microscopy

Igarashi, Shinichi*; Haraguchi, Masaharu*; Aihara, Jun; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Journal of Electron Microscopy, 53(3), p.223 - 228, 2004/08

 Times Cited Count:3 Percentile:78.08(Microscopy)

no abstracts in English

Journal Articles

Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.13 - 16, 2004/08

 Times Cited Count:10 Percentile:50.89(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Orientational ordering of iron silicide films on sputter etched Si substrate

Igarashi, Shinichi*; Katsumata, Toshinobu*; Haraguchi, Masaharu*; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Vacuum, 74(3-4), p.619 - 624, 2004/06

 Times Cited Count:6 Percentile:69.73(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Sputter etching of Si substrate to synthesize highly oriented $$beta$$-FeSi$$_{2}$$ films

Igarashi, Shinichi; Katsumata, Toshinobu; Haraguchi, Masaharu; Saito, Takeru; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Transactions of the Materials Research Society of Japan, 28(4), p.1153 - 1156, 2003/12

We have evaluated the crystal structure of the $$beta$$-FeSi$$_{2}$$ films formed with various sputter etching of Si substrate. Ne$$^{+}$$ sputter etching of Si (100) substrate was performed with ion energies of 1, 3, and 10 keV. After each etching, the substrate was annealed at a temperature of 1073 K for 30 min. The $$beta$$-FeSi$$_{2}$$ films of 100 nm in thickness were formed at 973 K with the amount of deposited Fe, 30 nm. X-ray diffraction revealed that these films have polycrystalline $$beta$$-FeSi$$_{2}$$ structure but strong preferential orientation aligned as $$beta$$-FeSi$$_{2}$$ (100) // Si (100). Furthermore, the oriented structure of the film was improved by lowering the incident energy of Ne$$^{+}$$.

Journal Articles

Characterization of air-exposed surface $$beta$$-FeSi$$_{2}$$ fabricated by ion beam sputter deposition method

Saito, Takeru; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Hojo, Kiichi; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*

Nuclear Instruments and Methods in Physics Research B, 206, p.321 - 325, 2003/05

 Times Cited Count:6 Percentile:55.15(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Effect of surface treatment of Si substrate on the crystal structure of FeSi$$_{2}$$ thin film formed by ion beam sputter deposition method

Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takeru; Sasase, Masato*; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 206, p.313 - 316, 2003/05

 Times Cited Count:17 Percentile:24.02(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Development of semiconductor material ($$beta$$-FeSi$$_2$$ film) for next generation using IBSD method

Heya, Akira*; Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Saito, Takeru*; Yamaguchi, Kenji; Hojo, Kiichi

Ishikawaken Kogyo Shikenjo Heisei-14-Nendo Kenkyu Hokoku, (52), p.9 - 12, 2003/00

no abstracts in English

Journal Articles

Effect of treatment for Si substrate on the crystal structure of $$beta$$-FeSi$$_{2}$$ thin film

Haraguchi, Masaharu; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Sasase, Masato*; Nakanoya, Takamitsu; Saito, Takeru; Hojo, Kiichi

Shinku, 45(10), p.749 - 753, 2002/10

no abstracts in English

Journal Articles

Surface chemical states and oxidation resistivity of "ecologically friendly" semiconductor ($$beta$$-FeSi$$_{2}$$) thin films

Saito, Takeru; Yamamoto, Hiroyuki; Sasase, Masato*; Nakanoya, Takamitsu; Yamaguchi, Kenji; Haraguchi, Masaharu*; Hojo, Kiichi

Thin Solid Films, 415(1-2), p.138 - 142, 2002/08

 Times Cited Count:18 Percentile:33.77(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Fabrication of $$beta$$-FeSi$$_{2}$$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03

no abstracts in English

Journal Articles

Formation process of $$beta$$-FeSi$$_{2}$$ on Si(111) substrate studied by means of SR-XPS

Saito, Takeru; Yamamoto, Hiroyuki; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Photon Factory Activity Report 2001, (19), P. 205, 2001/00

no abstracts in English

11 (Records 1-11 displayed on this page)
  • 1