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Journal Articles

In situ irradiation and measurement of triple junction solar cells at Low Intensity, Low Temperature (LILT) conditions

Harris, R. D.*; Imaizumi, Mitsuru*; Walters, R. J.*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*

IEEE Transactions on Nuclear Science, 55(6), p.3502 - 3507, 2008/12

 Times Cited Count:8 Percentile:49.21(Engineering, Electrical & Electronic)

The performance of triple junction InGaP/GaAs/Ge solar cells have been studied following low temperature irradiation while using low intensity illumination. High energy electron and proton irradiations have been performed with cell characterization carried out in situ at the irradiation temperature with no intermediate temperature changes. As such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements which permitted the extraction of the four principle solar cell parameters: short circuit current, open circuit voltage, maximum power, and fill factor. In addition, quantum efficiency measurements were made prior to and following the irradiations. The low temperature irradiations were followed by a room temperature anneal to determine if any subsequent recovery was present.

Journal Articles

Irradiation and measurement of GaAs based solar cells at low intensity, low temperature (LILT) conditions

Walters, R. J.*; Harris, R. D.*; Imaizumi, Mitsuru*; Lorentzen, J. R.*; Messenger, S. R.*; Tischler, J. G.*; Oshima, Takeshi; Sato, Shinichiro; Sharps, R. P.*; Fatemi, N. S.*

Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.105 - 108, 2008/12

The performance of triple junction InGaP/GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out ${it in situ}$ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation.

Oral presentation

Study on radiation degradation of triple-junction solar cells under low temperature and low light intensity

Imaizumi, Mitsuru*; Oshima, Takeshi; Harris, R. D.*; Walters, R. J.*

no journal, , 

no abstracts in English

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