Radiation damage on 6H-SiC Schottky diodes

Nishijima, Toshiji*; Hearne, S. M.*; Jamieson, D. N.*; Oshima, Takeshi; Lee, K. K.; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 210, p.196 - 200, 2003/09

https://doi.org/10.1016/S0168-583X(03)01069-3

The radiation damage in silicon carbide (SiC) schottky diode was studied using ion beam induced current (IBIC). Schottky diodes with electrodes of 30 m on n- or p-type 6H-SiC were fabricated using the evaporation of Al, Ni, and Au. To study the radiation damage of diodes, the 2MeV-He ion micro beam with a diameter of 1 m was irradiated from 10 to 10/cm into a 10 m 10 m area. As the result, the value of IBIC decreased with increasing the dose of 2 MeV-He. This indicates that the charge collection decreases by the recombination centers introduced by irradiation.