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Journal Articles

Capacitance transient study of a bistable deep level in e$$^{-}$$-Irradiated n-type 4H-SiC

Beyer, F. C.*; Hemmingsson, C. G.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi; Janz$'e$n, E.*

Journal of Physics D; Applied Physics, 45(45), p.455301_1 - 455301_7, 2012/11

https://doi.org/10.1088/0022-3727/45/45/455301
 Times Cited Count：20 Percentile：61.15(Physics, Applied)

Journal Articles

Identification of the gallium vacancy-oxygen pair defect in GaN

Son, N. T.*; Hemmingsson, C. G.*; Paskova, T.*; Evans, K. R.*; Usui, Akira*; Morishita, Norio; Oshima, Takeshi; Isoya, Junichi*; Monemar, B.*; Janz$'e$n, E.*

Physical Review B, 80(15), p.153202_1 - 153202_4, 2009/10

https://doi.org/10.1103/PhysRevB.80.153202
 Times Cited Count：40 Percentile：79.06(Materials Science, Multidisciplinary)

GaN samples were irradiated with electrons of 2 MeV at 1$$times$$10$$^{19}$$/cm$$^{2}$$, and electron spin resonance (ESR) was measured at 77 K. As a result, four defect signals which are labeled D1 to D4 were observed. The D2 signal was identified to be negatively charged gallium vacancy - oxygen pair from the details studies of $$^{14}$$N hf structure.

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