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Journal Articles

Capacitance transient study of a bistable deep level in e$$^{-}$$-Irradiated n-type 4H-SiC

Beyer, F. C.*; Hemmingsson, C. G.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi; Janz$'e$n, E.*

Journal of Physics D; Applied Physics, 45(45), p.455301_1 - 455301_7, 2012/11

https://doi.org/10.1088/0022-3727/45/45/455301
 Times Cited Count：18 Percentile：57.55(Physics, Applied)

Journal Articles

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated $$n$$-type 4H-SiC

Beyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Janz$'e$n, E.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi

Journal of Applied Physics, 109(10), p.103703_1 - 103703_6, 2011/05

https://doi.org/10.1063/1.3586042
 Times Cited Count：17 Percentile：57.65(Physics, Applied)

By low-energy electron (200 keV) irradiation into epitaxial n-type 4H-SiC with a dose of 5$$times$$10$$^{16}$$/cm$$^{2}$$, the bistable M-center is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is investigated. During the annihilation process of M-center, the bistable EB-centers are detected in the low temperature range of the DLTS spectrum. The value of annealing energy of the M-center is similar to the generation energy of the EB-centers. This suggests that the M-center partially transforms to the EB-centers by annealing. The EB-centers completely disappeared after annealing temperatures higher than 700 $$^{circ}$$C. Since the threshold energy for moving Si atom in SiC is higher than the applied irradiation energy of electrons, and the annihilation temperatures are relatively low, the M-center and the EB-centers are attributed to defects related to the C atom in SiC.

Journal Articles

Metastable defects in low-energy electron irradiated n-type 4H-SiC

Beyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Janz$'e$n, E.*

Materials Science Forum, 645-648, p.435 - 438, 2010/00

By low-energy electron irradiation of epitaxial n-type 4H-SiC, the Deep Level Transient Spectroscopy (DLTS) peaks called the defects Z1/2 and EH6/7 were observed, which were also observed in as-grown layer and the commonly found peaks EH1 and EH3 (M-center) also appeared. New defect named the EB-centers increased after annealing out of EH1 and EH3. Since low energy electron irradiation (less than 220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers might be carbon related defects.

Journal Articles

Status of JT-60SA tokamak under the EU-JA broader approach agreement

Matsukawa, Makoto; Kikuchi, Mitsuru; Fujii, Tsuneyuki; Fujita, Takaaki; Hayashi, Takao; Higashijima, Satoru; Hosogane, Nobuyuki; Ikeda, Yoshitaka; Ide, Shunsuke; Ishida, Shinichi; et al.

Fusion Engineering and Design, 83(7-9), p.795 - 803, 2008/12

https://doi.org/10.1016/j.fusengdes.2008.06.047
 Times Cited Count：17 Percentile：72.86(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Shallow P donors in 3${it C}$-, 4${it H}$-, and 6${it H}$-SiC

Isoya, Junichi*; Katagiri, Masayuki*; Umeda, Takahide*; Son, N. T.*; Henry, A.*; Gali, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janz$'e$n, E.*

Materials Science Forum, 527-529, p.593 - 596, 2006/00

no abstracts in English

Journal Articles

Structure of the 11/2$$^{-}$$ analog state in $$^{91}$$Nb populated by the $$^{90}$$Zr($$alpha$$, t) reaction

Van der Molen, H. K. T.*; Akimune, Hidetoshi*; Van den Berg, A. M.*; Daito, Izuru*; Fujimura, Hisako*; Fujita, Yoshitaka*; Fujiwara, Mamoru; Harakeh, M. N.*; Ihara, F.*; Inomata, Toru*; et al.

Physics Letters B, 502(1-4), p.1 - 8, 2001/03

https://doi.org/10.1016/S0370-2693(01)00168-X
 Times Cited Count：3 Percentile：28.27(Astronomy & Astrophysics)

no abstracts in English

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