JOPSS - Search Results

Journal Articles

Comprehensive study and design of scaled metal/high-/Ge gate stacks with ultrathin aluminum oxide interlayers

Asahara, Ryohei*; Hideshima, Iori*; Oka, Hiroshi*; Minoura, Yuya*; Ogawa, Shingo*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 106(23), p.233503_1 - 233503_4, 2015/06

https://doi.org/10.1063/1.4922447

Times Cited Count：20 Percentile：64.63(Physics, Applied)

Advanced metal/high-/Ge gate stacks with a sub-nm equivalent oxide thickness and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation.

Journal Articles

High-/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO $_{x}$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Dai-19-Kai Getosutakku KenkyuKai Yokoshu, p.5 - 8, 2014/01

Journal Articles

Ge diffusion and bonding state change in metal/high-/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Microelectronic Engineering, 109, p.137 - 141, 2013/09

https://doi.org/10.1016/j.mee.2013.03.115

Times Cited Count：11 Percentile：54.93(Engineering, Electrical & Electronic)

Journal Articles

Germanide formation in metal/high-/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Minoura, Yuya*; Tanaka, Ryohei*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Shingaku Giho, 113(87), p.19 - 23, 2013/06

An understanding of the mechanisms responsible for formation or decomposition of GeO $_{x}$ interlayer and Ge diffusion into high- layer is important to develop advanced metal/high- gate stacks for Ge MOSFETs. In this work, we fabricated HfO $_{2}$ /GeO $_{x}$ /Ge gate stacks by oxidation of thin metal Hf layers on Ge substrates. The effect of plasma oxidation on the change in the bonding states of Ge atoms in HfO $_{2}$ /GeO $_{x}$ /Ge gate stacks and the structural changes induced by metal electrode deposition and thermal annealing was systematically investigated by synchrotron radiation photoemission spectroscopy (SR-PES) and electrical characterization.

Oral presentation

Impact of Ge $_{3}$ N $_{4}$ interface layer on EOT scaling in high-k/Ge gate stacks

Kutsuki, Katsuhiro*; Okamoto, Gaku*; Hideshima, Iori*; Uenishi, Yusuke*; Kirino, Takashi*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

no journal, ,

Direct deposition of ZrO $_{2}$ films on Ge substrates and subsequent thermal oxidation results in an equivalent oxide thickness (EOT) of above 2 nm while obtaining good interface quality due to interfacial GeO $_{2}$ formation. In this work, we proposed the use of Ge $_{3}$ N $_{4}$ interlayer formed by high-density plasma nitridation for further EOT scaling because of its high resistance to oxidation and superior thermal stability. The structural modification of ZrO $_{2}$ /Ge $_{3}$ N $_{4}$ /Ge after oxidation was characterized by synchrotron-radiation X-ray photoelectron spectroscopy at BL23SU in SPring-8. Ge 3d core-level spectra revealed that the Ge $_{3}$ N $_{4}$ interlayer was slightly oxidized after thermal oxidation at 823 K, but N 1s spectra remained almost unchanged. This indicates that the Ge $_{3}$ N $_{4}$ interlayer is effective in suppressing interfacial oxidation, thus obtaining an EOT of 1.8 nm.

Oral presentation

Thermal stability of Metal/High-k/GeO $_{2}$ /Ge stacks fabricated by MBD method

Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, ,

no abstracts in English

Oral presentation

High-/Ge gate stack with an EOT of 0.56 nm by controlling high-/Ge interface reaction using ultrathin AlO $_{x}$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, ,

no abstracts in English

Oral presentation

High-k/Ge gate stack with an EOT of 0.56 nm by controlling interface reaction using ultrathin AlO $_{x}$ interlayer

Hosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, ,

Oral presentation

Improvement of interfacial properties of high-k/Ge gate stacks by post-metal anneal

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, ,

no abstracts in English

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Comprehensive study and design of scaled metal/high-/Ge gate stacks with ultrathin aluminum oxide interlayers

High-/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO $_{x}$ interlayer

Ge diffusion and bonding state change in metal/high-/Ge gate stacks and its impact on electrical properties

Germanide formation in metal/high-/Ge gate stacks and its impact on electrical properties

Impact of Ge $_{3}$ N $_{4}$ interface layer on EOT scaling in high-k/Ge gate stacks

Thermal stability of Metal/High-k/GeO $_{2}$ /Ge stacks fabricated by MBD method

High-/Ge gate stack with an EOT of 0.56 nm by controlling high-/Ge interface reaction using ultrathin AlO $_{x}$ interlayer

High-k/Ge gate stack with an EOT of 0.56 nm by controlling interface reaction using ultrathin AlO $_{x}$ interlayer

Improvement of interfacial properties of high-k/Ge gate stacks by post-metal anneal