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Journal Articles

Cross section measurements of the radioactive $$^{107}$$Pd and stable $$^{105,108}$$Pd nuclei at J-PARC/MLF/ANNRI

Nakamura, Shoji; Kimura, Atsushi; Kitatani, Fumito; Ota, Masayuki; Furutaka, Kazuyoshi; Goko, Shinji*; Hara, Kaoru; Harada, Hideo; Hirose, Kentaro; Kin, Tadahiro*; et al.

Nuclear Data Sheets, 119, p.143 - 146, 2014/05

 Times Cited Count:10 Percentile:57.34(Physics, Nuclear)

We have started the measurements of the neutron-capture cross sections for stable $$^{105,108}$$Pd nuclei as well as the radioactive $$^{107}$$Pd. The neutron-capture cross-section measurements by the time-of flight method were performed using an apparatus called "Accurate Neutron-Nucleus Reaction measurement Instrument (ANNRI)" installed at the neutron Beam Line No.4 of the Materials and Life science experimental Facility (MLF) in the J-PARC. The neutron-capture cross sections of $$^{107}$$Pd and $$^{105,108}$$Pd have been measured in the neutron energy range from thermal to 300 eV. Some new information was obtained for resonances of these Pd nuclei.

Journal Articles

Energy resolution of pulsed neutron beam provided by the ANNRI beamline at the J-PARC/MLF

Kino, Koichi*; Furusaka, Michihiro*; Hiraga, Fujio*; Kamiyama, Takashi*; Kiyanagi, Yoshiaki*; Furutaka, Kazuyoshi; Goko, Shinji*; Hara, Kaoru; Harada, Hideo; Harada, Masahide; et al.

Nuclear Instruments and Methods in Physics Research A, 736, p.66 - 74, 2014/02

 Times Cited Count:31 Percentile:91.8(Instruments & Instrumentation)

Journal Articles

Analysis of bonding structure of ultrathin films of oligothiophene molecules grown on passivated silicon surfaces

Toyoshima, Hiroaki*; Hiraga, Kenta*; Ono, Shinya*; Tanaka, Masatoshi*; Ozawa, Kenichi*; Mase, Kazuhiko*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji

Photon Factory Activity Report 2011, Part B, P. 102, 2012/00

The knowledge of the interaction between organic molecules and semiconductor surfaces plays an important role in adapting organic semiconductors into the semiconductor technology. In the present study, the process of $$alpha$$-sexithiophene ($$alpha$$-6T) thin layer formation on passivated silicon (Si) surfaces has been investigated in-situ by means of PES, angle-depended NEXAFS (near-edge X-ray absorption fine-structure), SDRS, and RDS. For water-adsorbed Si(001), it was found that the majority of $$alpha$$-6T molecules are standing on the substrate. Above 3 nm, most of molecules are standing and constitute well ordered islands or films. For ethylene adsorbed Si(001) on the contrary, some of $$alpha$$-6T molecules are flat-lying, resulting in less prominent orientation. Thus, the orientation of molecules depends on the method of passivation, which opens the possibility of controlling the molecular orientation by the surface modification.

Journal Articles

The "Study on nuclear data by using a high intensity pulsed neutron source for advanced nuclear system" nuclear data project and the characteristics of the neutron beam line for the capture cross section experiments at J-PARC

Kiyanagi, Yoshiaki*; Kino, Koichi*; Furusaka, Michihiro*; Hiraga, Fujio*; Kamiyama, Takashi*; Kato, Kiyoshi*; Igashira, Masayuki*; Katabuchi, Tatsuya*; Mizumoto, Motoharu*; Oshima, Masumi; et al.

Journal of the Korean Physical Society, 59(2), p.1781 - 1784, 2011/08

 Times Cited Count:13 Percentile:62.2(Physics, Multidisciplinary)

The project of the comprehensive nuclear data research for the development of the advanced reactor systems had been executed successfully by eight organizations from 2005 to 2009. In this project, we constructed the pulsed neutron beamline that was aimed to obtain neutron capture cross-sections of long-lived fission products and minor actinides accurately. The energy spectra, spatial distributions, and pulses of the beam were studied by measurements and simulation calculations, and they were found to be consistent with those of the beamline design. In this paper, we present the overview of the project and the properties of the neutron beam provided by this beam line.

Journal Articles

Progress in R&D efforts on the energy recovery linac in Japan

Sakanaka, Shogo*; Ago, Tomonori*; Enomoto, Atsushi*; Fukuda, Shigeki*; Furukawa, Kazuro*; Furuya, Takaaki*; Haga, Kaiichi*; Harada, Kentaro*; Hiramatsu, Shigenori*; Honda, Toru*; et al.

Proceedings of 11th European Particle Accelerator Conference (EPAC '08) (CD-ROM), p.205 - 207, 2008/06

Future synchrotron light sources based on the energy-recovery linacs (ERLs) are expected to be capable of producing super-brilliant and/or ultra-short pulses of synchrotron radiation. Our Japanese collaboration team is making efforts for realizing an ERL-based hard X-ray source. We report recent progress in our R&D efforts.

Journal Articles

Design study of the compact ERL optics

Shiraga, Takashi*; Nakamura, Norio*; Harada, Kentaro*; Shimada, Miho*; Sakanaka, Shogo*; Kobayashi, Yukinori*; Hajima, Ryoichi

Proceedings of 5th Annual Meeting of Particle Accelerator Society of Japan and 33rd Linear Accelerator Meeting in Japan (CD-ROM), p.589 - 591, 2008/00

An energy recovery linac (ERL) is expected to be the next generation synchrotron radiation source that can provide synchrotron radiation of higher brilliance, shorter pulse and higher coherence than the existing third-generation synchrotron light sources. The compact ERL is planned to be constructed in order to solve some problems in achievement of such synchrotron radiation and to confirm advantages of ERLs. We studied and optimized the compact ERL optics to achieve subpico-second bunch generation and efficient energy recovery and to transport the beam to the beam dump without serious beam loss. The design study of the compact ERL optics was done by using the simulation code Elegant. As a result, we succeeded in obtaining a 40-fs bunch with a charge of 77 pC just after the first TBA cell. Furthermore we could suppress the maximum beam size to less than 8.5 mm even after deceleration.

Oral presentation

Electron beam optics in the compact ERL

Hajima, Ryoichi; Shiraga, Takashi*; Nakamura, Norio*; Harada, Kentaro*; Shimada, Miho*; Sakanaka, Shogo*; Kobayashi, Yukinori*

no journal, , 

no abstracts in English

Oral presentation

Design study of beam optics in the compact ERL

Hajima, Ryoichi; Shiraga, Takashi*; Harada, Kentaro*; Shimada, Miho*; Sakanaka, Shogo*; Kobayashi, Yukinori*; Nakamura, Norio*

no journal, , 

no abstracts in English

Oral presentation

Measurement of neutron-capture cross section of Pd-108 using ANNRI

Nakamura, Shoji; Kimura, Atsushi; Kitatani, Fumito; Kin, Tadahiro*; Koizumi, Mitsuo; Toh, Yosuke; Hara, Kaoru; Hirose, Kentaro; Furutaka, Kazuyoshi; Harada, Hideo; et al.

no journal, , 

The neutron capture cross section of $$^{108}$$Pd was measured in the energy range of thermal to 100 eV using the 4$$pi$$Ge spectrometer, which is a part of the neutron-nucleus reaction instrument installed at the beam line No.4 of J-PARC/MLF. Asc the result, the first resonance at 2.9 eV of $$^{108}$$Pd was found to be overestimated in the evaluated library JENDL-4.0.

Oral presentation

The Structure of $$alpha$$-sexithiophene ultra-thin films on passivated Si(001) surfaces

Hiraga, Kenta*; Toyoshima, Hiroaki*; Ono, Shinya*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji; Mukai, Kozo*; Yoshinobu, Jun*; Tanaka, Masatoshi*

no journal, , 

It is important to control orientation structure and electric property at the interface between organic semiconductor molecule and surfaces of semiconductor substrates in order for the development of commercial base organic transistors and solar cells. In the present work, we have investigated the surface reflection spectroscopy (RDS, SRDS), S-1s angle resolved near-edge X-ray absorption fine-structure (NEXAFS), and UPS for $$alpha$$-sexithiophene ($$alpha$$-6T) ultra-thin films with a variety of thickness from 0.25 to 1.0 nm. The results of RDS and SDRS, and NEXAFS gave the information on orientation structure of the $$alpha$$-6T molecules. In contrast, UPS gave the uniformity of the thin films. We report on how orientation structures and condensed structures are changed depending on the method of passivation and the film thickness.

Oral presentation

Structure of $$alpha$$-sexithiophene thin films grown on semiconductor surface studied by near-edge X-ray absorption fine structure

Hiraga, Kenta*; Toyoshima, Hiroaki*; Nakajima, Junki*; Tanaka, Hiroya*; Ono, Shinya*; Tanaka, Masatoshi*; Sekiguchi, Tetsuhiro; Hirao, Norie; Shimoyama, Iwao; Baba, Yuji

no journal, , 

It is important to investigate structure of organic thin films grown on semiconductor surfaces for fabrication of the organic semiconductors.

Oral presentation

Analysis of oligothiophene thin films grown on semiconductor surfaces

Kodama, Hiraku*; Hiraga, Kenta*; Ono, Shinya*; Sekiguchi, Tetsuhiro; Baba, Yuji; Tanaka, Masatoshi*

no journal, , 

The electronic property of organic semiconductor depends strongly on the interfacial structure between organic molecule and the substrate. We have investigated the structure of a-sexithiophene ($$alpha$$-6T) molecule thin films grown on semiconductor surfaces including SiO$$_{2}$$, GaSe, and WSe$$_{2}$$, using NEXAFS spectroscopy. Using polarized X-ray, orientation structure of a-6T molecules can be precisely determined. It was found that the orientation structure depend on the substrates. $$alpha$$-6T on GaSe is oriented with long molecular axis being flat-lying parallel to the surface. On the hand, $$alpha$$-6T on SiO$$_{2}$$ is up-right standing. The tendency of orientation direction change was interpreted in terms of the interfacial interaction between $$alpha$$-6T molecule and the substrates.

Oral presentation

Analysis of the structure of $$alpha$$-sexithiophene thin films grown on layered materials

Kodama, Hiraku*; Hiraga, Kenta*; Ono, Shinya*; Sekiguchi, Tetsuhiro; Baba, Yuji; Tanaka, Masatoshi*

no journal, , 

Orientation of organic semiconductor has been important issue because of its strong anisotropy of the electronic property. We have investigated the orientation effect of $$alpha$$-sexithiphene (6T) molecule deposited on WSe$$_{2}$$ or GaSe substrate, which is layered semiconductor material. Thickness was controlled by regulating deposition rate and time. Orientation angle was analyzed by angle-resolved NEXAFS spectroscopy. The results show that molecular orientation angle depend not only on the substrate but also the thickness. Tilt angle is thought to be determined by the energy stability due to the commensurate at the interface as well as the molecule-substrate interaction.

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