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Ti
)
NiSe
Tsuchida, Shun*; Hirose, Yusuke; Sekikawa, Takuya; Ono, Yoshiaki*; Hirahara, Takuya*; Sano, Sumika*; Kawaguchi, Shogo*; Kobayashi, Shintaro*; Uwatoko, Yoshiya*; Settai, Rikio*
Journal of the Physical Society of Japan, 94(11), p.114703_1 - 114703_7, 2025/10
Times Cited Count：2 Percentile：51.84(Physics, Multidisciplinary)We investigated the carrier doping effect on an excitonic insulator TaNiSe by means of the electrical resistivity 
and Hall coefficient 
using single crystals of (TaTi)NiSe, and band calculation. The excitonic transition temperature 
is continuously suppressed to 83 K at 
= 0.104 while preserving the crystal structure. With increasing substitution concentration , a semiconducting increment of and is strongly suppressed and a metallic behavior is observed at > 0.06. Ti substitution can realize an excitonic correlated metallic state. This metallization is explained by the hole doping effect based on the band calculations. Applying pressure to the carrier doped (TaTi)NiSe, we found superconductivity above 2.6 GPa, which is much smaller than that of TaNiSe around 8 GPa. The carrier doping induced by Ti substitution favors superconductivity in this compound.
Sakakibara, Yasuhide; Isomura, Kazutoshi; Yamashita, Takuya; Watashi, Katsumi; Doi, Motoo; Okusa, Kyoichi; Tagawa, Akihiro; Hirahara, Kenji
Nihon Hozen Gakkai Dai-3-Kai Gakujutsu Koenkai Yoshishu, p.283 - 286, 2006/06
This study was performed to enrich the contents of measures for an ageing of the nuclear power plants at Fukui area, where infrastructures of research works, for example, institutes, universities etc. are intensively existed., according to the Road-Map established by the Atomic Energy Society of Japan at 2005.
