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Journal Articles

Thermal management of heat resistant FBG sensing for high temperature industrial plants

Nishimura, Akihiko; Takenaka, Yusuke*; Furusawa, Akinori; Torimoto, Kazuhiro; Ueda, Masashi; Fukuda, Naoaki*; Hirao, Kazuyuki*

E-Journal of Advanced Maintenance (Internet), 9(2), p.52 - 59, 2017/08

no abstracts in English

Journal Articles

Estimation of digital single event transient pulse-widths in logic cells from high-energy heavy-ion-induced transient current in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.169 - 172, 2010/10

Digital Single Event Transient (DSET) pulse-widths in an inverter cell fabricated with the 0.2 mm FD-SOI process were estimated from high-energy heavy-ion-induced transient current in a single n-type MOSFET fabricated with the 0.2 mm FD-SOI process. We verified that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation.

Journal Articles

Soft-error rate in a logic LSI estimated from SET pulse-width measurements

Makino, Takahiro; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 56(6), p.3180 - 3184, 2009/12

 Times Cited Count:13 Percentile:64.74(Engineering, Electrical & Electronic)

SET-induced soft-error rates ($$SER_{SET}$$s) of logic LSIs are estimated from SET pulse-widths measured in logic cells used in logic LSIs. The estimated rates are consistent with directly measured $$SER_{SET}$$s for logic LSIs.

Journal Articles

Verification of soft-error rate estimation method in a logic LSI

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Hirose, Kazuyuki*

Proceedings of the 28th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.35 - 40, 2009/12

We want to reveal the relation between SET-induced soft-error rates ($$SER_{SET}$$s) and SET pulse-width distribution to be able to reduce the $$SER_{SET}$$ with an SET filter like an RC filter or a temporal latch architecture. By considering the relation between $$SER_{SET}s$$ and SET pulse-width, we can determine the minimum time constant for the SET filter to reduce the $$SER_{SET}$$ effectively. A theoretical estimation has been proposed to obtain $$SER_{SET}s$$ in a logic LSI from SET pulse-widths measured in logic cells and the latch probability of SET pulses at flip-flops (FFs) used in logic LSIs. However, the estimation method has not been verified yet. In this paper, we verify the theoretical estimation method.

Journal Articles

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

IEEE Transactions on Nuclear Science, 56(1), p.202 - 207, 2009/02

 Times Cited Count:36 Percentile:90.64(Engineering, Electrical & Electronic)

SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.

Journal Articles

Radiation-induced transient-pulses in logic LSIs for use in space applications

Makino, Takahiro*; Yanagawa, Yoshimitsu*; Kobayashi, Daisuke*; Fukuda, Seisuke*; Hirose, Kazuyuki*; Ikeda, Hirokazu*; Saito, Hirobumi*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; et al.

Shingaku Giho, 108(100), p.67 - 72, 2008/06

SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.

Oral presentation

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

no journal, , 

no abstracts in English

Oral presentation

A New evaluation technology for single event effects on space use SOI devices

Kobayashi, Daisuke*; Hirose, Kazuyuki*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Digital single event transient pulse-widths estimation in logic cells from heavy-ion-induced transient currents in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Estimation of digital single event transient noise pulse waveform from heavy ion induced transient current waveform in a single MOSFET

Makino, Takahiro; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Single event transient currents measurement on advanced transistors

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

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