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Journal Articles

Compatibility of Ni and F82H with liquid Pb-Li under rotating flow

Kanai, Akihiko*; Park, C.*; Noborio, Kazuyuki*; Kasada, Ryuta*; Konishi, Satoshi*; Hirose, Takanori; Nozawa, Takashi; Tanigawa, Hiroyasu

Fusion Engineering and Design, 89(7-8), p.1653 - 1657, 2014/10

 Times Cited Count:4 Percentile:34.25(Nuclear Science & Technology)

Journal Articles

Fermi surface and magnetic properties of antiferromagnet EuBi$$_3$$

Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Tatetsu, Yasutomi*; Maehira, Takahiro*; Miura, Yasunao*; Mori, Akinobu*; Tsutsumi, Hiroki*; Hirose, Yusuke*; et al.

Journal of the Physical Society of Japan, 82(12), p.124708_1 - 124708_6, 2013/12

 Times Cited Count:18 Percentile:71.35(Physics, Multidisciplinary)

Journal Articles

Magnetic and Fermi surface properties of EuGa$$_4$$

Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Miura, Yasunao*; Tsutsumi, Hiroki*; Mori, Akinobu*; Ishida, Kazuhiro*; Mitamura, Katsuya*; Hirose, Yusuke*; et al.

Journal of the Physical Society of Japan, 82(10), p.104703_1 - 104703_10, 2013/10

 Times Cited Count:31 Percentile:81.84(Physics, Multidisciplinary)

Journal Articles

Experimental study on radiation tolerance of SOI-PLLs

Hoshino, Eijiro*; Kobayashi, Daisuke*; Makino, Takahiro; Oshima, Takeshi; Hirose, Kazuyuki*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.130 - 133, 2012/12

Single event effects on phase locked loops (PLLs) are experimentally investigated. Test chips of the PLLs are fabricated in a 0.2-$$mu$$m fully-depleted silicon-on-insulator technology. The PLL architecture is designed in conjunction with hardening techniques such as the triple modular redundancy and a stacked transistor design approach. A heavy-ion beam test confirms that the hardened PLL exhibits higher radiation tolerance than non-hardened one for 7.5-MeV Ne irradiation: The accelerated ions have the linear energy transfer of 7.3 MeV/cm$$^2$$/mg in Si.

Journal Articles

Estimation of digital single event transient pulse-widths in logic cells from high-energy heavy-ion-induced transient current in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.169 - 172, 2010/10

Digital Single Event Transient (DSET) pulse-widths in an inverter cell fabricated with the 0.2 mm FD-SOI process were estimated from high-energy heavy-ion-induced transient current in a single n-type MOSFET fabricated with the 0.2 mm FD-SOI process. We verified that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation.

Journal Articles

Soft-error rate in a logic LSI estimated from SET pulse-width measurements

Makino, Takahiro; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 56(6), p.3180 - 3184, 2009/12

 Times Cited Count:13 Percentile:66.84(Engineering, Electrical & Electronic)

SET-induced soft-error rates ($$SER_{SET}$$s) of logic LSIs are estimated from SET pulse-widths measured in logic cells used in logic LSIs. The estimated rates are consistent with directly measured $$SER_{SET}$$s for logic LSIs.

Journal Articles

Verification of soft-error rate estimation method in a logic LSI

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Hirose, Kazuyuki*

Proceedings of the 28th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.35 - 40, 2009/12

We want to reveal the relation between SET-induced soft-error rates ($$SER_{SET}$$s) and SET pulse-width distribution to be able to reduce the $$SER_{SET}$$ with an SET filter like an RC filter or a temporal latch architecture. By considering the relation between $$SER_{SET}s$$ and SET pulse-width, we can determine the minimum time constant for the SET filter to reduce the $$SER_{SET}$$ effectively. A theoretical estimation has been proposed to obtain $$SER_{SET}s$$ in a logic LSI from SET pulse-widths measured in logic cells and the latch probability of SET pulses at flip-flops (FFs) used in logic LSIs. However, the estimation method has not been verified yet. In this paper, we verify the theoretical estimation method.

Journal Articles

Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

Nakagawa, Satoko*; Tajima, Michio*; Hirose, Kazuyuki*; Oshima, Takeshi; Ito, Hisayoshi

Japanese Journal of Applied Physics, 48(3), p.031201_1 - 031201_4, 2009/03

 Times Cited Count:4 Percentile:19.33(Physics, Applied)

Light element impurities in ultrathin top Silicon layers of silicon-on-insulator (SOI) wafers were investigated by a luminescence activation method using electron irradiation. Photoluminescence (PL) measurement using ultraviolet (UV) light excitation was carried out of various commercial SOI wafers irradiated with electrons. The C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm were observed after electron irradiation. There were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. The present method is a verypromising tool to evaluate the light element impurities in top Si layers.

Journal Articles

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

IEEE Transactions on Nuclear Science, 56(1), p.202 - 207, 2009/02

 Times Cited Count:34 Percentile:90.98(Engineering, Electrical & Electronic)

SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.

Journal Articles

Development of 7 T Cryogen-free superconducting magnet for gyrotron

Hirose, Ryoichi*; Kamikado, Takeshi*; Okui, Yoshio*; Miyata, Hitoshi*; Shibutani, Kazuyuki*; Ozaki, Osamu*; Sakamoto, Keishi

IEEE Transactions on Applied Superconductivity, 18(2), p.920 - 923, 2008/06

 Times Cited Count:14 Percentile:60.38(Engineering, Electrical & Electronic)

A special type of 7 T 240 mm vertical bore cryogen-free superconducting magnet system was developed. The magnet system consists of three sets of coils which are charged separately. A set of sweep coils are located inside of the main coil. The sweep coil produces only $$pm$$0.2 T but is charged and discharged within 10 seconds so as to control electron trajectory. To avoid quench with the rise of the temperature from the large AC loss, this set of coils are wound with Nb$$_{3}$$Sn conductor. This magnet system will contribute to the fast control of the gyrotron oscillation frequency.

Journal Articles

Radiation-induced transient-pulses in logic LSIs for use in space applications

Makino, Takahiro*; Yanagawa, Yoshimitsu*; Kobayashi, Daisuke*; Fukuda, Seisuke*; Hirose, Kazuyuki*; Ikeda, Hirokazu*; Saito, Hirobumi*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; et al.

Shingaku Giho, 108(100), p.67 - 72, 2008/06

SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.

Oral presentation

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

no journal, , 

no abstracts in English

Oral presentation

A New evaluation technology for single event effects on space use SOI devices

Kobayashi, Daisuke*; Hirose, Kazuyuki*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Digital single event transient pulse-widths estimation in logic cells from heavy-ion-induced transient currents in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Estimation of digital single event transient noise pulse waveform from heavy ion induced transient current waveform in a single MOSFET

Makino, Takahiro; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Single event transient currents measurement on advanced transistors

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Study on radiation susceptibility of SiGe/Si Heterojunctions

Kobayashi, Daisuke*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Simoen, E.*; Claeys, C.*; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

Oral presentation

Optimization of electron beam welding conditions for fabrication of DEMO blanket box structure

Hirose, Takanori; Shirai, Yuma*; Ogiwara, Hiroyuki*; Mori, Hiroaki*; Serizawa, Hisashi*; Saida, Kazuyuki*; Nishimoto, Kazutoshi*; Tanigawa, Hiroyasu

no journal, , 

no abstracts in English

Oral presentation

Performance test for radiation-hardened phase-lacked loops

Hoshino, Eijiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Evaluation of radiation tolerance of phase-locked loops fabricated in 0.2-$$mu$$m FD-SOI process

Hoshino, Eijiro*; Shibata, Yuichi*; Kobayashi, Daisuke*; Kakehashi, Yuya*; Makino, Takahiro; Oshima, Takeshi; Hirose, Kazuyuki*

no journal, , 

no abstracts in English

23 (Records 1-20 displayed on this page)