Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Miyazawa, Yu*; Ikegami, Masashi*; Miyasaka, Tsutomu*; Oshima, Takeshi; Imaizumi, Mitsuru*; Hirose, Kazuyuki*
Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), p.1178 - 1181, 2015/06
Kanai, Akihiko*; Park, C.*; Noborio, Kazuyuki*; Kasada, Ryuta*; Konishi, Satoshi*; Hirose, Takanori; Nozawa, Takashi; Tanigawa, Hiroyasu
Fusion Engineering and Design, 89(7-8), p.1653 - 1657, 2014/10
Times Cited Count：4 Percentile：30.92(Nuclear Science & Technology)
Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Tatetsu, Yasutomi*; Maehira, Takahiro*; Miura, Yasunao*; Mori, Akinobu*; Tsutsumi, Hiroki*; Hirose, Yusuke*; et al.
Journal of the Physical Society of Japan, 82(12), p.124708_1 - 124708_6, 2013/12
Times Cited Count：21 Percentile：72.6(Physics, Multidisciplinary)
Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Miura, Yasunao*; Tsutsumi, Hiroki*; Mori, Akinobu*; Ishida, Kazuhiro*; Mitamura, Katsuya*; Hirose, Yusuke*; et al.
Journal of the Physical Society of Japan, 82(10), p.104703_1 - 104703_10, 2013/10
Times Cited Count：35 Percentile：81.11(Physics, Multidisciplinary)Hoshino, Eijiro*; Kobayashi, Daisuke*; Makino, Takahiro; Oshima, Takeshi; Hirose, Kazuyuki*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.130 - 133, 2012/12
Single event effects on phase locked loops (PLLs) are experimentally investigated. Test chips of the PLLs are fabricated in a 0.2-
m fully-depleted silicon-on-insulator technology. The PLL architecture is designed in conjunction with hardening techniques such as the triple modular redundancy and a stacked transistor design approach. A heavy-ion beam test confirms that the hardened PLL exhibits higher radiation tolerance than non-hardened one for 7.5-MeV Ne irradiation: The accelerated ions have the linear energy transfer of 7.3 MeV/cm
/mg in Si.
Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.169 - 172, 2010/10
Digital Single Event Transient (DSET) pulse-widths in an inverter cell fabricated with the 0.2 mm FD-SOI process were estimated from high-energy heavy-ion-induced transient current in a single n-type MOSFET fabricated with the 0.2 mm FD-SOI process. We verified that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation.
Makino, Takahiro; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 56(6), p.3180 - 3184, 2009/12
Times Cited Count：13 Percentile：64.74(Engineering, Electrical & Electronic)SET-induced soft-error rates (
s) of logic LSIs are estimated from SET pulse-widths measured in logic cells used in logic LSIs. The estimated rates are consistent with directly measured s for logic LSIs.
Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Hirose, Kazuyuki*
Proceedings of the 28th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.35 - 40, 2009/12
We want to reveal the relation between SET-induced soft-error rates (s) and SET pulse-width distribution to be able to reduce the with an SET filter like an RC filter or a temporal latch architecture. By considering the relation between 
and SET pulse-width, we can determine the minimum time constant for the SET filter to reduce the effectively. A theoretical estimation has been proposed to obtain in a logic LSI from SET pulse-widths measured in logic cells and the latch probability of SET pulses at flip-flops (FFs) used in logic LSIs. However, the estimation method has not been verified yet. In this paper, we verify the theoretical estimation method.
Nakagawa, Satoko*; Tajima, Michio*; Hirose, Kazuyuki*; Oshima, Takeshi; Ito, Hisayoshi
Japanese Journal of Applied Physics, 48(3), p.031201_1 - 031201_4, 2009/03
Times Cited Count：4 Percentile：18.58(Physics, Applied)Light element impurities in ultrathin top Silicon layers of silicon-on-insulator (SOI) wafers were investigated by a luminescence activation method using electron irradiation. Photoluminescence (PL) measurement using ultraviolet (UV) light excitation was carried out of various commercial SOI wafers irradiated with electrons. The C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm were observed after electron irradiation. There were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. The present method is a verypromising tool to evaluate the light element impurities in top Si layers.
Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.
IEEE Transactions on Nuclear Science, 56(1), p.202 - 207, 2009/02
Times Cited Count：36 Percentile：90.64(Engineering, Electrical & Electronic)SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.
Hirose, Ryoichi*; Kamikado, Takeshi*; Okui, Yoshio*; Miyata, Hitoshi*; Shibutani, Kazuyuki*; Ozaki, Osamu*; Sakamoto, Keishi
IEEE Transactions on Applied Superconductivity, 18(2), p.920 - 923, 2008/06
Times Cited Count：15 Percentile：61.02(Engineering, Electrical & Electronic)A special type of 7 T 240 mm vertical bore cryogen-free superconducting magnet system was developed. The magnet system consists of three sets of coils which are charged separately. A set of sweep coils are located inside of the main coil. The sweep coil produces only 
0.2 T but is charged and discharged within 10 seconds so as to control electron trajectory. To avoid quench with the rise of the temperature from the large AC loss, this set of coils are wound with Nb
Sn conductor. This magnet system will contribute to the fast control of the gyrotron oscillation frequency.
Makino, Takahiro*; Yanagawa, Yoshimitsu*; Kobayashi, Daisuke*; Fukuda, Seisuke*; Hirose, Kazuyuki*; Ikeda, Hirokazu*; Saito, Hirobumi*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; et al.
Shingaku Giho, 108(100), p.67 - 72, 2008/06
SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.
Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.
no journal, ,
no abstracts in English
Kobayashi, Daisuke*; Hirose, Kazuyuki*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi
no journal, ,
no abstracts in English
Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*
no journal, ,
no abstracts in English
Makino, Takahiro; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi; Hirose, Kazuyuki*
no journal, ,
no abstracts in English
Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*
no journal, ,
no abstracts in English
Kobayashi, Daisuke*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Simoen, E.*; Claeys, C.*; Hirose, Kazuyuki*
no journal, ,
no abstracts in English
Hirose, Takanori; Shirai, Yuma*; Ogiwara, Hiroyuki*; Mori, Hiroaki*; Serizawa, Hisashi*; Saida, Kazuyuki*; Nishimoto, Kazutoshi*; Tanigawa, Hiroyasu
no journal, ,
no abstracts in English
Hoshino, Eijiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Makino, Takahiro; Oshima, Takeshi
no journal, ,
no abstracts in English
