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Journal Articles

Transient response to high energy heavy ions in 6H-SiC n$$^+$$p diodes

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Materials Science Forum, 600-603, p.1039 - 1042, 2009/00

no abstracts in English

Journal Articles

Degradation of charge collection efficiency for 6H-SiC diodes by electron irradiation

Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*

Materials Science Forum, 600-603(Part 2), p.1043 - 1046, 2009/00

The 6H-SiC n$$^{+}$$p diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 6$$times$$10$$^{16}$$/cm$$^{2}$$ and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 1$$times$$10$$^{15}$$/cm$$^{2}$$, although L decreased to 0.6$$mu$$m from 2.5$$mu$$m by the irradiation. The degradation of CCE was observed at fluences above 5$$times$$10$$^{15}$$/cm$$^{2}$$.

Journal Articles

Effects of fabrication process on the electrical characteristics of n-channel MOSFETs irradiated with gamma-rays

Hishiki, Shigeomi; Iwamoto, Naoya; Oshima, Takeshi; Ito, Hisayoshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Materials Science Forum, 600-603, p.707 - 710, 2009/00

The n-channel 6H-SiC MOSFETs were fabricated using different process. The carbon-coated MOSFETs showed higher radiation resistance than non-coated ones. The generation of interface traps for carbon-coated MOSFETs was smaller than that for non-coated MOSFETs. This origin can be interptered in terms of the surface degradation by thermal annealing process after ion implantation.

Journal Articles

Reduction of interface traps and enhancement of channel mobility in n-channel 6H-SiC MOSFETs by irradiation with $$gamma$$-rays

Hishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*

Materials Science Forum, 600-603, p.703 - 706, 2009/00

 Times Cited Count:1 Percentile:50.12

N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by $$gamma$$-rays up to 3.16 MGy(SiO$$_{2}$$) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The $$gamma$$-rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.

Journal Articles

Decrease of charge collection due to displacement damage by $$gamma$$ rays in a 6H-SiC diode

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*

IEEE Transactions on Nuclear Science, 54(6), p.1953 - 1960, 2007/12

 Times Cited Count:17 Percentile:76.46(Engineering, Electrical & Electronic)

Journal Articles

Impact of Auger recombination on charge collection of a 6H-SiC diode by heavy ions

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*

IEEE Transactions on Nuclear Science, 54(6), p.2706 - 2713, 2007/12

 Times Cited Count:16 Percentile:73.12(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Charge collection efficiency of 6H-SiC diodes damaged by electron irradiation

Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto; Nakano, Itsuo*; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.27 - 30, 2007/12

no abstracts in English

Journal Articles

Electrical characteristics of 6H-SiC MOSFETs after high dose irradiation

Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.31 - 34, 2007/12

no abstracts in English

Journal Articles

Degradation of charge collection efficiency obtained for 6H-SiC n$$^{+}$$p diodes irradiated with gold ions

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; Tanaka, Reisaburo*; et al.

Materials Science Forum, 556-557, p.913 - 916, 2007/00

 Times Cited Count:4 Percentile:78.68

no abstracts in English

Journal Articles

InSb cryogenic radiation detectors

Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Xiang, R.*; Nakamura, Tatsuya; Katagiri, Masaki

Nuclear Instruments and Methods in Physics Research A, 568(1), p.416 - 420, 2006/11

 Times Cited Count:13 Percentile:68.77(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Electrical characteristics of p-channel 6H-SiC MOSFETs irradiated with $$gamma$$-rays

Hishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.173 - 176, 2006/10

no abstracts in English

Journal Articles

Observation of charge collection efficiency of 6H-SiC n$$^{+}$$p diodes irradiated with Au-ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10

no abstracts in English

Journal Articles

Analysis of transient current in SiC diodes irradiated with MeV ions

Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10

no abstracts in English

Journal Articles

Use of liquid helium-3 as a neutron converter for a semiconductor-based neutron detector

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Nuclear Instruments and Methods in Physics Research A, 529(1-3), p.399 - 401, 2004/08

 Times Cited Count:1 Percentile:10.64(Instruments & Instrumentation)

We evaluated the neutron-detection characteristics of a cryogenic neutron detector operating at 1.6 K, which comprises a liquid helium-3 as a neutron converter and an InSb semiconductor detector. The InSb semiconductor detector detected the protons created in the nuclear reaction $$^{3}He + n rightarrow p + T$$ in the liquid helium-3, where the density of that is ~600 times larger than that of the gaseous helium-3 at room temperature.

Journal Articles

Cryogenic neutron detector by InSb semiconductor detector with high-density helium-3 gas converter

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Nuclear Instruments and Methods in Physics Research A, 520(1-3), p.76 - 79, 2004/03

 Times Cited Count:8 Percentile:50.96(Instruments & Instrumentation)

The neutron-detection characteristics of a cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter were evaluated at a gas pressure of up to 12.5atm at 4.2K. The detector successfully detected stable neutrons under these conditions, where the density of the helium-3 gas is a few-hundred times higher than that at room temperature. It was found that the neutron detection efficiency was correlated with the gas pressure - even in a backward-detection configuration - in low-temperature, high-pressure helium-3.

Journal Articles

Cryogenic neutron detector comprising an InSb semiconductor detector and a supercritical helium-3 gas converter

Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*

Review of Scientific Instruments, 75(2), p.340 - 344, 2004/02

 Times Cited Count:6 Percentile:37.25(Instruments & Instrumentation)

We evaluated the neutron-detection characteristics of a proposed cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter. The neutron detector was operated at 4.2 K with helium-3 gas filling up to 1.5 atm, at which the density of the helium-3 nucleus corresponds to that at 160 atm at room temperature. The secondary particles generated by the $$^{3}$$He(n,p) T reaction were successfully detected by the InSb detector with a time response of $$sim$$80 nsec at all tested gas pressures.

Journal Articles

Undoped-type InSb radiation detector with rapid rise time

Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki

Radiation Detectors and Their Uses, p.113 - 117, 2003/00

We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.

Oral presentation

Decrease in charge collection efficiency of 6H-SiC n$$^{+}$$p diodes irradiated with Au ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

no journal, , 

no abstracts in English

Oral presentation

Change in the electrical characteristics of p-channel 6H-SiC MOSFET by $$gamma$$-ray irradiation

Hishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

InSb crystal growth of low carrier concentration for radiation detector development

Hishiki, Shigeomi; Kogetsu, Yoshitaka*; Kanno, Ikuo*; Yamana, Hajimu*

no journal, , 

no abstracts in English

41 (Records 1-20 displayed on this page)