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p diodesOnoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 600-603, p.1039 - 1042, 2009/00
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*
Materials Science Forum, 600-603(Part 2), p.1043 - 1046, 2009/00
The 6H-SiC n
p diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 6
10
/cm
and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 110
/cm, although L decreased to 0.6
m from 2.5m by the irradiation. The degradation of CCE was observed at fluences above 510/cm.
Hishiki, Shigeomi; Iwamoto, Naoya; Oshima, Takeshi; Ito, Hisayoshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Materials Science Forum, 600-603, p.707 - 710, 2009/00
The n-channel 6H-SiC MOSFETs were fabricated using different process. The carbon-coated MOSFETs showed higher radiation resistance than non-coated ones. The generation of interface traps for carbon-coated MOSFETs was smaller than that for non-coated MOSFETs. This origin can be interptered in terms of the surface degradation by thermal annealing process after ion implantation.
-raysHishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*
Materials Science Forum, 600-603, p.703 - 706, 2009/00
Times Cited Count：1 Percentile：47.43(Materials Science, Ceramics)N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by -rays up to 3.16 MGy(SiO
) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The -rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.
rays in a 6H-SiC diodeOnoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kojima, Kazutoshi*; Kawano, Katsuyasu*
IEEE Transactions on Nuclear Science, 54(6), p.1953 - 1960, 2007/12
Times Cited Count：19 Percentile：76.84(Engineering, Electrical & Electronic)Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Mishima, Kenta; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*
IEEE Transactions on Nuclear Science, 54(6), p.2706 - 2713, 2007/12
Times Cited Count：16 Percentile：72.04(Engineering, Electrical & Electronic)no abstracts in English
Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto; Nakano, Itsuo*; Kawano, Katsuyasu*
Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.27 - 30, 2007/12
no abstracts in English
Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*
Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.31 - 34, 2007/12
no abstracts in English
p diodes irradiated with gold ionsOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; Tanaka, Reisaburo*; et al.
Materials Science Forum, 556-557, p.913 - 916, 2007/00
Times Cited Count：4 Percentile：76.81(Materials Science, Ceramics)no abstracts in English
Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Xiang, R.*; Nakamura, Tatsuya; Katagiri, Masaki
Nuclear Instruments and Methods in Physics Research A, 568(1), p.416 - 420, 2006/11
Times Cited Count：16 Percentile：72.85(Instruments & Instrumentation)no abstracts in English
-raysHishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.173 - 176, 2006/10
no abstracts in English
p diodes irradiated with Au-ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10
no abstracts in English
Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*
Nuclear Instruments and Methods in Physics Research A, 529(1-3), p.399 - 401, 2004/08
Times Cited Count：1 Percentile：10.3(Instruments & Instrumentation)We evaluated the neutron-detection characteristics of a cryogenic neutron detector operating at 1.6 K, which comprises a liquid helium-3 as a neutron converter and an InSb semiconductor detector. The InSb semiconductor detector detected the protons created in the nuclear reaction 
in the liquid helium-3, where the density of that is ~600 times larger than that of the gaseous helium-3 at room temperature.
Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*
Nuclear Instruments and Methods in Physics Research A, 520(1-3), p.76 - 79, 2004/03
Times Cited Count：8 Percentile：48.81(Instruments & Instrumentation)The neutron-detection characteristics of a cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter were evaluated at a gas pressure of up to 12.5atm at 4.2K. The detector successfully detected stable neutrons under these conditions, where the density of the helium-3 gas is a few-hundred times higher than that at room temperature. It was found that the neutron detection efficiency was correlated with the gas pressure - even in a backward-detection configuration - in low-temperature, high-pressure helium-3.
Kanno, Ikuo*; Hishiki, Shigeomi*; Murakami, Haruko*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki
Nuclear Instruments and Methods in Physics Research A, 520(1-3), p.93 - 95, 2004/03
Times Cited Count：2 Percentile：18.14(Instruments & Instrumentation)no abstracts in English
Nakamura, Tatsuya; Katagiri, Masaki; Aratono, Yasuyuki; Kanno, Ikuo*; Hishiki, Shigeomi*; Sugiura, Osamu*; Murase, Yasuhiro*
Review of Scientific Instruments, 75(2), p.340 - 344, 2004/02
Times Cited Count：6 Percentile：35.7(Instruments & Instrumentation)We evaluated the neutron-detection characteristics of a proposed cryogenic neutron detector comprising an InSb semiconductor detector and a helium-3 gas converter. The neutron detector was operated at 4.2 K with helium-3 gas filling up to 1.5 atm, at which the density of the helium-3 nucleus corresponds to that at 160 atm at room temperature. The secondary particles generated by the 
He(n,p) T reaction were successfully detected by the InSb detector with a time response of 
80 nsec at all tested gas pressures.
Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya; Katagiri, Masaki
Radiation Detectors and Their Uses, p.113 - 117, 2003/00
We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.
p diodes irradiated with Au ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
no journal, ,
no abstracts in English
-ray irradiationHishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi
no journal, ,
no abstracts in English
