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Journal Articles

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

 Times Cited Count:4 Percentile:56.57(Instruments & Instrumentation)

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:6 Percentile:42.14(Instruments & Instrumentation)

Journal Articles

Heavy-ion induced anomalous charge collection from 4H-SiC Schottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Hirao, Toshio*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 60(4), p.2647 - 2650, 2013/08

 Times Cited Count:5 Percentile:54.75(Engineering, Electrical & Electronic)

Heavy ion induced anomalous charge collection was observed from 4H-SiC Schottky barrier diodes. It is suggested that the incident ion range with suspect to the thickness of the epi-layer of the SBD in key to understanding these observation and the understanding mechanism.

Journal Articles

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; Oshima, Takeshi

Journal of Applied Physics, 113(14), p.143714_1 - 143714_5, 2013/04

 Times Cited Count:27 Percentile:21.43(Physics, Applied)

Journal Articles

Heavy-ion-induced charge enhancement in 4H-SiC schottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.66 - 69, 2012/12

Silicon carbide (SiC) is regarded as a promising candidate for electronic devices requiring high radiation tolerance (rad-hard devices). Some results indicate that SiC has superior radiation tolerance from the point of view of total ionizing dose effects (TIDs). For the development of rad-hard SiC devices, it is necessary to understand the response of their performance when dense charge is generated in them by an incident ion, resulting in single event effects (SEEs). Therefore, we have measured the bias dependence of the collected charge distribution induced by heavy ions in 4H-SiC-schottky barrier diodes (SBDs) fabricated in thick epi-layer to reveal SEE mechanisms. As a result, anomalous collected charge peaks (2nd peaks) induced by the heavy ions were observed for the first time. The new process of the SEB was observed in the case of incident ions on thick epi-layer of SiC-SBDs.

Journal Articles

Annealing effects on charge collection efficiency of an electron-irradiated 4H-SiC particle detector

Iwamoto, Naoya; Johnson, B. C.; Oshima, Takeshi; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.62 - 65, 2012/12

Oral presentation

Detection of deep levels in low-doped n-type 4H-SiC by using alpha particles

Iwamoto, Naoya; Johnson, B. C.; Oshima, Takeshi; Hoshino, Norihiro*; Tsuchida, Hidekazu*

no journal, , 

no abstracts in English

Oral presentation

Unusual charge collection from 4H-SiC Schottky barrier diode

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Enhancement of ion induced charge in SiC shottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles

Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

Oral presentation

Relation between Z$$_{1/2}$$ center and the charge collection efficiency of SiC high-energy particle detectors

Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Study of anomalous charge collection mechanisms in 4H-SiC SBD

Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Investigation of deep levels in silicon carbide using ion-induced charge transient spectroscopy

Kada, Wataru*; Onoda, Shinobu; Iwamoto, Naoya*; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Makino, Takahiro; Kambayashi, Yuya; Koka, Masashi; Hanaizumi, Osamu*; Kamiya, Tomihiro; et al.

no journal, , 

Oral presentation

Ion-induced anomalous charge collection mechanisms in SiC Schottky barrier diodes

Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Study of single event burnout mechanisms on 4H-SIC Schottky Barrier Diodes

Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi

no journal, , 

no abstracts in English

16 (Records 1-16 displayed on this page)
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