JOPSS - Search Results

Excess carrier lifetimes in as-grown and low-energy electron irradiated p-type 4H-SiC epitaxial layers were investigated using the microwave photoconductivity decay method. The carrier lifetime increased with increasing excitation density in the epilayers. This results suggests that the dominant recombination center in the epilayers has larger capture cross section for electrons than capture cross section for holes. The carrier lifetime in the epilayer decreased by the low-energy electron irradiation decreases. The decrease in lifetime in the electron irradiated samples showed recovery after annealing at 1000 $^{circ}$ C.

Journal Articles

Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 645-648, p.207 - 210, 2010/00

Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay (-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 110 $^{16}$ cm $^{-2}$ (ele-16) and 110 $^{17}$ cm $^{-2}$ (ele-17). As a results of -PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 s, 0.07 s and 0.04 s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.

Journal Articles

Progress in physics and technology developments for the modification of JT-60

Tamai, Hiroshi; Matsukawa, Makoto; Kurita, Genichi; Hayashi, Nobuhiko; Urata, Kazuhiro*; Miura, Yushi; Kizu, Kaname; Tsuchiya, Katsuhiko; Morioka, Atsuhiko; Kudo, Yusuke; et al.

Plasma Science and Technology, 6(1), p.2141 - 2150, 2004/02

https://doi.org/10.1088/1009-0630/6/1/006

Times Cited Count：2 Percentile：6.59(Physics, Fluids & Plasmas)

The dominant issue for the the modification program of JT-60 (JT-60SC) is to demonstrate the steady state reactor relevant plasma operation. Physics design on plasma parameters, operation scenarios, and the plasma control method are investigated for the achievement of high-. Engineering design and the R&D on the superconducting magnet coils, radiation shield, and vacuum vessel are performed. Recent progress in such physics and technology developments is presented.

Journal Articles

Objectives and design of the JT-60 superconducting tokamak

Ishida, Shinichi; Abe, Katsunori*; Ando, Akira*; Chujo, T.*; Fujii, Tsuneyuki; Fujita, Takaaki; Goto, Seiichi*; Hanada, Kazuaki*; Hatayama, Akiyoshi*; Hino, Tomoaki*; et al.

Nuclear Fusion, 43(7), p.606 - 613, 2003/07

https://doi.org/10.1088/0029-5515/43/7/314

no abstracts in English

Journal Articles

Objectives and design of the JT-60 superconducting tokamak

Ishida, Shinichi; Abe, Katsunori*; Ando, Akira*; Cho, T.*; Fujii, Tsuneyuki; Fujita, Takaaki; Goto, Seiichi*; Hanada, Kazuaki*; Hatayama, Akiyoshi*; Hino, Tomoaki*; et al.

Nuclear Fusion, 43(7), p.606 - 613, 2003/07

https://doi.org/10.1088/0029-5515/43/7/314

Times Cited Count：33 Percentile：70.05(Physics, Fluids & Plasmas)

no abstracts in English

Oral presentation

Electrical characterization of GaN containing nitrogen vacancies introduced by electron irradiation

Kato, Masashi*; Fukushima, Keisuke*; Kasuga, Masanobu*; Kito, Kosuke*; Ichimura, Masaya*; Kanechika, Masakazu*; Ishiguro, Osamu*; Kachi, Tetsu*; Oshima, Takeshi

no journal, ,

no abstracts in English

Oral presentation

Excess carrier lifetime in electron irradiated p-type 4H-SiC epilayers after annealing

Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, ,

no abstracts in English

Oral presentation

Observation of deep levels in p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, ,

no abstracts in English

Oral presentation

Deep-levels near the valence band of p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no journal, ,

no abstracts in English

Oral presentation

Deep levels in electron irradiated semi-insulating 4H-SiC; Electronic, optical and structural observation

Nakane, Hiroki*; Kato, Masashi*; Ichimura, Masaya*; Oshima, Takeshi; Ivanov, I. G.*; Trinh, X. T.*; Son, N. T.*; Janzn, E.*

no journal, ,

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Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC

Identification of structures of the deep levels in 4H-SiC

Excess carrier lifetime in p-type 4H-SiC epilayers with and without low-energy electron irradiation

Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Progress in physics and technology developments for the modification of JT-60

Objectives and design of the JT-60 superconducting tokamak

Objectives and design of the JT-60 superconducting tokamak

Electrical characterization of GaN containing nitrogen vacancies introduced by electron irradiation

Excess carrier lifetime in electron irradiated p-type 4H-SiC epilayers after annealing

Observation of deep levels in p-type 4H-SiC induced by low-energy electron irradiation

Deep-levels near the valence band of p-type 4H-SiC induced by low-energy electron irradiation

Deep levels in electron irradiated semi-insulating 4H-SiC; Electronic, optical and structural observation