Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Balois, M. V.*; Hayazawa, Norihiko*; Yasuda, Satoshi; Ikeda, Katsuyoshi*; Yang, B. *; Kazuma, Emiko*; Yokota, Yasuyuki*; Kim, Y.*; Tanaka, Takuo*
npj 2D Materials and Applications (Internet), 3(1), p.38_1 - 38_10, 2019/10
Times Cited Count：22 Percentile：64.65(Nanoscience & Nanotechnology)We simultaneously observe both allowed and forbidden optical phonon modes of defect-free areas in monolayer graphene to study nanometre scale strain variations and plasmonic activation of the Raman peaks, respectively, using our home-built TERS system in ambient. Through Tip-enhanced Raman scattering (TERS) imaging, strain variations and nanometre-sized domains down to 5 nm were visualised with a spatial resolution of 0.7 nm. Moreover, such subnanometric confinement was found to activate not only the D and D'forbidden phonon modes but also their D + D'combination mode. With our TERS in ambient system, the full phonon characterisation of defect-free graphene and other 2D nanomaterials is now possible, which will be useful for subnanometre strain analysis and exploring the inherent properties of defect-free materials.
Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*
AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03
Times Cited Count：4 Percentile：16.80(Nanoscience & Nanotechnology)Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
Times Cited Count：0 Percentile：0.00(Energy & Fuels)Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
Times Cited Count：5 Percentile：40.64(Crystallography)Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Times Cited Count：5 Percentile：20.89(Energy & Fuels)Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*
no journal, ,
Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, 
, and growth time, 
, were found to follow 
in accordance with the growth limited by the binding of Ga with As at step edges.
Hirai, Keizo*; Komatsu, Masafumi*; Akama, Akio*; Noguchi, Kyotaro*; Nagakura, Junko*; Ohashi, Shinta*; Saito, Tetsu*; Kawasaki, Tatsuro*; Yazaki, Kenichi*; Ikeda, Shigeto*; et al.
no journal, ,
no abstracts in English
Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*
no journal, ,
