Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

https://doi.org/10.1063/1.4943511

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

https://doi.org/10.1016/j.jcrysgro.2012.12.119

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, , 

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, , and growth time, , were found to follow in accordance with the growth limited by the binding of Ga with As at step edges.

Absorption and translocation of radioactive cesium in Cypress planted trees

Hirai, Keizo*; Komatsu, Masafumi*; Akama, Akio*; Noguchi, Ryotaro*; Nagakura, Junko*; Ohashi, Shinta*; Saito, Tetsu*; Kawasaki, Tatsuro*; Yazaki, Kenichi*; Ikeda, Shigeto*; et al.

no journal, , 

no abstracts in English