Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

AIP Conference Proceedings 1556, p.14 - 17, 2013/09

https://doi.org/10.1063/1.4822188

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

https://doi.org/10.1109/JPHOTOV.2011.2174198

In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

no journal, , 

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, , and growth time, , were found to follow in accordance with the growth limited by the binding of Ga with As at step edges.