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Journal Articles

Consideration of single-event gate rupture mechanism in power MOSFET

Kuboyama, Satoshi*; Mizuta, Eiichi*; Ikeda, Naomi*; Abe, Hiroshi; Oshima, Takeshi; Tamura, Takashi*

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.138 - 141, 2012/12

no abstracts in English

Journal Articles

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Kuboyama, Satoshi*; Maru, Akifumi*; Ikeda, Naomi*; Hirao, Toshio; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 57(6), p.3257 - 3261, 2010/12

 Times Cited Count:16 Percentile:72.61(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

Ikeda, Naomi*; Kuboyama, Satoshi*; Maru, Akifumi*; Hirao, Toshio; Abe, Hiroshi; Tamura, Takashi*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.163 - 166, 2010/10

The trench structure showed an anomalously large degradation by heavy ion irradiation. For the trench structure, ions irradiated normal to the chip surface traverse the gate oxide along the entire length of the channel. Therefore, there is a possibility that the trapped holes resulting from the ion traverse introduce the anomalously large leakage current path. This phenomenon is apparently attributable to the microdose effect. In the previous report, the microdose effect was identified on both trench and planner type of power MOSFETs by real-time measurement of the threshold voltage shift during the heavy ion irradiation with very long range. In this study, detailed characterization of the microdose effects was carried out with several in species. As a result, several damage parameters introduced in the gate oxide by a single ion, such as physical damage size and trapped hole density in the damage region were estimated.

Journal Articles

Dissemination of information on the results of R&D through the JAEA Library

Ikeda, Kiyoshi; Gonda, Mayuki; Nozawa, Takashi; Itabashi, Keizo; Ebisawa, Naomi*

Proceedings of 11th International Conference on Grey Literature (GL-11), p.111 - 117, 2009/12

This poster presentation is to introduce new circulation systems of gray literatures in the fields of nuclear science and technology. Normally circulation of grey literature is not easy, but JAEA Library has been making efforts for highly accessibility to JAEA reports (i.e. JAEA-Research etc.) via the Internet. JAEA Library website is providing the two types of systems for dissemination of our R&D results including JAEA Reports. "JAEA Abstracts" is the list of current R&D results by our staff. The bibliographic information of JAEA reports and papers published in journals is listed. "JOPSS" is the abbreviation for JAEA Originated Papers Searching System. You may search all JAEA research results accumulated over the past fifty years. Recently, with the aim of giving convenience to users of our R&D results in the world, we have developed the new searching interface and retrieval algorithms for "JOPSS".

Journal Articles

Development of the JAEA R&D results management system; Aiming to user-friendly system for foreign researchers

Gonda, Mayuki; Ikeda, Kiyoshi; Ebisawa, Naomi*; Nozawa, Takashi

Dai-5-Kai Joho Purofesshonaru Shimpojiumu (INFOPRO 2008) Happyo Yokoshu, p.125 - 129, 2008/11

no abstracts in English

Journal Articles

"JAEA Abstracts" and "JOPSS"; Pioneer of institutional repository

Gonda, Mayuki; Ikeda, Kiyoshi; Ebisawa, Naomi*

Senmon Toshokan, (228), p.26 - 32, 2008/03

AA2007-0138.pdf:2.36MB

Japan Atomic Energy Agency (JAEA) has disseminated research results via the Internet from before institutional repositories are provided by many universities and institutes. JAEA Library is providing 2 systems, "JAEA Abstracts" and "JOPSS" (JAEA Originated Papers Searching System) today. In this article, the history and the present situation of dissemination of JAEA's research results are reviewed.

Journal Articles

Magnetic and dielectric behavior of the ruthenium double perovskite oxides $$R$$$$_{2}$$$$M$$RuO$$_{6}$$ ($$R$$=La, Pr and Nd, $$M$$=Mg, Co, Ni and Zn)

Yoshii, Kenji; Ikeda, Naoshi*; Mori, Shigeo*; Yoneda, Yasuhiro; Mizumaki, Masaichiro*; Tanida, Hajime*; Kawamura, Naomi*

Transactions of the Materials Research Society of Japan, 32(1), p.51 - 54, 2007/03

Magnetic and dielectric properties of the ruthenium double perovskites $$R$$$$_{2}$$$$M$$RuO$$_{6}$$ were studied ($$M$$ = Co, Ni, Zn, Mg). The materials with the magnetic M$$^{2+}$$ ions ($$M$$ = Co and Ni) showed magnetic ordering and large dielectric constants (about 5000). On the other hand, for the non-magnetic M$$^{2+}$$ ions ($$M$$ = Mg and Zn), magnetic ordering was not observed. In addition, their dielectric constants were found to be small (about 100-200). Together with the result of the dielectric response, the large dielectric constants for $$M$$=Co and Ni may be related to a smooth response of polar regions. Investigations of the properties of $$R$$$$_{2}$$$$M$$RuO$$_{6}$$ with $$R$$=Pr and Nd are also being carried out, and their results are briefly discussed.

Journal Articles

Bulk damage observed in recent LSI devices

Shindo, Hiroyuki*; Kuboyama, Satoshi*; Ikeda, Naomi*; Otomo, Hiromitsu*; Shimada, Osamu*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.63 - 66, 2004/10

no abstracts in English

Journal Articles

Improved model for single-event burnout mechanism

Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.165 - 168, 2004/10

no abstracts in English

Journal Articles

Bulk damage caused by single protons in SDRAMs

Shindo, Hiroyuki*; Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*

IEEE Transactions on Nuclear Science, 50(6, Part1), p.1839 - 1845, 2003/12

 Times Cited Count:15 Percentile:69.28(Engineering, Electrical & Electronic)

no abstracts in English

JAEA Reports

Study on Evaluation of Internal Exposure Dose

Miyahara, H.*; Narita, N.*; Ikeda, Keiichi*; Kato, Y.*; Fujiki, K.*; Momose, Takumaro; Tasaki, Takashi; Kurihara, Osamu; Hayashi, Naomi

JNC TY8400 2001-002, 81 Pages, 2001/07

JNC-TY8400-2001-002.pdf:2.35MB

no abstracts in English

Oral presentation

Fe 3p-$$>$$1s X-ray resonant emission spectroscopy of LuFe$$_{2}$$O$$_{4}$$ single crystal

Agui, Akane; Mizumaki, Masaichiro*; Kawamura, Naomi*; Kuroda, Tomoko*; Hayakawa, Hironori*; Maeda, Daisuke*; Michiuchi, Takamasa*; Ikeda, Naoshi*

no journal, , 

no abstracts in English

Oral presentation

Feasibility study on a 90 nm bulk CMOS process for applicability to space environments

Maru, Akifumi*; Kuboyama, Satoshi*; Shindo, Hiroyuki*; Ikeda, Naomi*; Tamura, Takashi*; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Investigation of the SEGR generating mechanism in power MOSFET

Mizuta, Eiichi*; Ikeda, Naomi*; Kuboyama, Satoshi*; Tamura, Takashi*; Abe, Hiroshi; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

14 (Records 1-14 displayed on this page)
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