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Sakauchi, Hitoshi; Kikuchi, Yuki; Imaizumi, Haruki; Fukui, Yasutaka
Dekomisshoningu Giho, (57), p.34 - 42, 2018/03
OWTF (Oarai Waste Reduction Treatment Facility) is constructed for volume reduction processing and stabilization treatment of radioactive solid waste, which generate from hot facilities in Oarai Research and Development Center of Japan Atomic Energy Agency, using in-can type high frequency induction heating by remote control. In this report, we describe the outline of OWTF under construction and treatment technologies, in which incinerating and melting.
Sato, Shinichiro; Miyamoto, Haruki*; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi
Solar Energy Materials and Solar Cells, 93(6-7), p.768 - 773, 2009/06
Times Cited Count：75 Percentile：90.65(Energy & Fuels)Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the shortcircuit currents (
) and open-circuit voltages (
) are simulated. The damage coefficients of minority carrier diffusion length (
) and the carrier removal rate of base carrier concentration (
) of each subcell are also estimated. The values of and obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.
Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi
Proceedings of 33rd IEEE Photovoltaic Specialists Conference (PVSC-33) (CD-ROM), 5 Pages, 2008/00
Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells due to proton irradiation is performed with the use of a one-dimensional optical device simulator; PC1D, and the degradation level in each sub-cell is evaluated. By fitting external quantum efficiencies of the 3J solar cells degraded by proton irradiation, the short-circuit currents () and open-circuit voltages () are simulated. The validity of this model is confirmed by comparing the results of both and to the experimental data. The carrier removal rate of base layer () and the damage coefficient of minority carrier diffusion length () in each sub-cell are also estimated. In addition, NIEL (Non-Ionizing Energy Loss) analysis for both radiation degradation parameters and is discussed.
Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi
Proceedings of 17th International Photovoltaic Science and Engineering Conference (PVSEC-17) (CD-ROM), p.502 - 503, 2007/12
Degradation modeling of InGaP/GaAs/Ge triple junction (3J) solar cells with the use of a one dimensional optical device simulator, PC1D, is performed for cell lifetime prediction. By fitting the quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV proton irradiation, the short circuit currents (Isc) and open circuit voltages (Voc) are simulated. The damage coefficient of minority carrier diffusion length () and carrier removal rate () of base carrier concentration of each sub cell are also estimated. The values of Isc and Voc obtained using the calculations show good agreement with experimental values. These results confirm that the degradation modeling method is effective for lifetime prediction of 3J solar cells.
Miyamoto, Haruki; Sato, Shinichiro; Oshima, Takeshi; Morioka, Chiharu*; Imaizumi, Mitsuru*; Kawano, Katsuyasu*
Proceedings of 17th International Photovoltaic Science and Engineering Conference (PVSEC-17) (CD-ROM), p.961 - 962, 2007/12
InGaP and Si solar cells are irradiated with 10 MeV protons at fluences up to 
cm
at room temperature (RT) and low temperature (LT). Results show that the remaining factor Voc irradiated at LT is higher than that at RT, and vice versa for Isc. The temperature coefficient of Voc after irradiation is greater than that before irradiation, although the coefficients of Isc are the same before and after irradiation. This degradation of the output performance of these solar cells can be interpreted in terms of a decrease in minority-carrier diffusion length.
Oshima, Takeshi; Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Hanaya, Hiroaki; Kawano, Katsuyasu*
Proceedings of 17th International Photovoltaic Science and Engineering Conference (PVSEC-17) (CD-ROM), p.955 - 956, 2007/12
In this study, we reconsider electron irradiation methods for the evaluation of radiation response of space solar cells. We show irradiation test methods performed at JAEA, such as a sequential method, in which the electrical performance of solar cells is measured outside of an irradiation facility after irradiation, and a simultaneous method, in which the electrical performance of solar cells can be measured in-situ. The results obtained from the sequential method are compared to these obtained from the simultaneous method. The reasonable distance between samples and the accelerator window to take reliable data on the basis of the energy decay of electrons by atmosphere is also discussed.
Oshima, Takeshi; Miyamoto, Haruki; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawakita, Shiro*; Shimazaki, Kazunori*; Kibe, Koichi*; Kawano, Katsuyasu*; Ito, Hisayoshi
JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 6, 2007/02
no abstracts in English
Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.161 - 164, 2006/10
The performance recovery of III-V solar cells irradiated with protons by current injection was investigated. InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with 50keV protons at 1
10
or 10MeV protons at 110
ions/cm
at room temperature. Then, the recoveries of the electric (current-voltage: 
-
) characteristics of these samples were investigated by forward current (minority carrier) injection. As a result, the open circuit voltage (
) of these 3J solar cells was recovered although no significant change in their short circuit current (
) was observed due to current injection. In addition, the samples irradiated with 50keV protons were recovered compared to the ones irradiated with 10MeV protons.
Miyamoto, Haruki; Sato, Shinichiro; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Ito, Hisayoshi; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.189 - 191, 2006/10
InGaP/GaAs/Ge triple-junction (3J) and Si single junction solar cells designed for space application were irradiated with 1.0 MeV- and 0.8 MeV-electrons at 110
510/cm in the atmosphere. The distance between the irradiation window and samples was changed from 20 to 50 cm. The accelerated electron energy changed from 1.0 to 0.93 MeV at the surface of samples with 20 cm below the irradiation window. This energy change caused by the energy attenuation of the Ti irradiation window and atmosphere. The electrical properties of solar cells were measured and compared before irradiation to after irradiation. No significant difference in the degradation of 3J solar cells due to electron irradiation was observed in energies range between 0.93 and 0.71 MeV. For Si solar cells, the value of degradation is the same in energies range between 0.93 and 0.87 MeV, however, the decrease in degradation was observed below 0.73 MeV.
Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Ito, Hisayoshi; Kibe, Koichi*; Kawano, Katsuyasu*
Proceedings of 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) (CD-ROM), p.1815 - 1817, 2006/05
no abstracts in English
Oshima, Takeshi; Miyamoto, Haruki; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawakita, Shiro*; Shimazaki, Kazunori*; Kibe, Koichi*; Kawano, Katsuyasu*; Ito, Hisayoshi
Proceedings of 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) (CD-ROM), p.1818 - 1821, 2006/05
no abstracts in English
Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Kibe, Koichi*; Ito, Hisayoshi; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Kibe, Koichi*; Ito, Hisayoshi; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Miyamoto, Haruki; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawakita, Shiro*; Shimazaki, Kazunori*; Kibe, Koichi*; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Miyamoto, Haruki; Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Ito, Hisayoshi; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Oshima, Takeshi; Miyamoto, Haruki; Imaizumi, Mitsuru*; Hanaya, Hiroaki; Kawakita, Shiro*; Morioka, Chiharu*; Sato, Shinichiro; Kaneko, Hirohisa; Kanazawa, Takao; Kibe, Koichi*; et al.
no journal, ,
no abstracts in English
Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi
no journal, ,
no abstracts in English
Sato, Shinichiro; Miyamoto, Haruki; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*; Kawano, Katsuyasu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Miyamoto, Haruki; Sato, Shinichiro; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Sato, Shinichiro; Oshima, Takeshi; Miyamoto, Haruki; Kawano, Katsuyasu*; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Morioka, Chiharu*
no journal, ,
no abstracts in English
