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Oral presentation

Fabrication and evaluation of light-emitting SiO$$_{2}$$ substrates implanted with Ge ions

Shinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito

no journal, , 

Light emission between ultraviolet and blue from SiO$$_{2}$$ substrates implanted with Ge ions in comparatively shallow depth ($$sim$$100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Ge ions deeper than previous works ($$sim$$200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO$$_{2}$$ substrate with 350 keV, and the implantation amount was 1$$times$$10$$^{17}$$ ions/cm$$^{2}$$. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 $$^{circ}$$C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO$$_{2}$$ substrates with photonic crystal characteristics has risen.

Oral presentation

Fabrication and evaluation of light-emitting SiO$$_{2}$$ substrate co-implanted with Si and C ions

Kikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.

no journal, , 

Light emission around a wavelength ($$lambda$$) of 500 nm from SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at 1100$$^{circ}$$C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at the lower temperature of 700$$^{circ}$$C. PL peaks by Si-ion implantation were observed around $$lambda$$ = 650 nm, and PL peaks by C-ion implantation were observed around $$lambda$$ = 450 nm from SiO$$_{2}$$ substrates annealed at 700$$^{circ}$$C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.

Oral presentation

Fabrication of optical functional elements by ion beam

Miura, Kenta*; Kikuchi, Shusuke*; Kiryu, Hiromu*; Inada, Kazuki*; Ozawa, Yusuke*; Hanaizumi, Osamu*; Yamamoto, Shunya; Sugimoto, Masaki; Yoshikawa, Masahito; Kawaguchi, Kazuhiro; et al.

no journal, , 

no abstracts in English

Oral presentation

Photoluminescence properties of light-emitting SiO$$_{2}$$ substrates implanted with Si and C ions

Inada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito

no journal, , 

It is reported that Si and C ions implanted SiO$$_{2}$$ substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO$$_{2}$$ substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was $$sim$$5.0$$times$$10$$^{16}$$ ions/cm$$^{2}$$. The C-ion implantation energy was 75 keV, and the implantation dose was $$sim$$3.0$$times$$10$$^{16}$$ ions/cm$$^{2}$$. The samples were subsequently annealed at 700$$^{circ}$$C for 25 min in air, after 1000$$^{circ}$$C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.

Oral presentation

Development of fabrication technique of optical functional devices by ion beam irradiation

Miura, Kenta*; Hanaizumi, Osamu*; Kada, Wataru*; Ozawa, Yusuke*; Inada, Kazuki*; Kubota, Atsushi*; Kawashima, Akihiro*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.

no journal, , 

no abstracts in English

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