Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

Fukidome, Hirokazu*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Inomata, Shuya*; Handa, Hiroyuki*; Saito, Eiji*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

Applied Physics Express, 4(11), p.115104_1 - 115104_3, 2011/11

https://doi.org/10.1143/APEX.4.115104

LEED and SR-XPS observations of graphene formation processes on 3C-SiC(100)/Si(100) thin film

Inomata, Shuya*; Handa, Hiroyuki*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Fukidome, Hirokazu*; Teraoka, Yuden; Yoshigoe, Akitaka; Kotsugi, Masato*; Okochi, Takuo*; et al.

no journal, , 

no abstracts in English

Electronic structure observations of graphene on 3C-SiC(111)/Si(111)

Inomata, Shuya*; Takahashi, Ryota*; Handa, Hiroyuki*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

no abstracts in English

Improvement of epitaxial graphene on silicon by use of vicinal Si(111) substrates

Haramoto, Naoki*; Inomata, Shuya*; Takahashi, Ryota*; Yoshigoe, Akitaka; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*

no journal, ,