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Journal Articles

Design for detecting recycling muon after muon-catalyzed fusion reaction in solid hydrogen isotope target

Okutsu, Kenichi*; Yamashita, Takuma*; Kino, Yasushi*; Nakashima, Ryota*; Miyashita, Konan*; Yasuda, Kazuhiro*; Okada, Shinji*; Sato, Motoyasu*; Oka, Toshitaka; Kawamura, Naritoshi*; et al.

Fusion Engineering and Design, 170, p.112712_1 - 112712_4, 2021/09

A muonic molecule which consists of two hydrogen isotope nuclei (deuteron (d) or tritium (t)) and a muon decays immediately via nuclear fusion and the muon will be released as a recycling muon, and start to find another hydrogen isotope nucleus. The reaction cycle continues until the muon ends up its lifetime of 2.2 $$mu$$s. Since the muon does not participate in the nuclear reaction, the reaction is so called a muon catalyzed fusion ($$mu$$CF). The recycling muon has a particular kinetic energy (KE) of the muon molecular orbital when the nuclear reaction occurs. Since the KE is based on the unified atom limit where distance between two nuclei is zero. A precise few-body calculation estimating KE distribution (KED) is also in progress, which could be compared with the experimental results. In the present work, we observed recycling muons after $$mu$$CF reaction.

Journal Articles

Time evolution calculation of muon catalysed fusion; Emission of recycling muons from a two-layer hydrogen film

Yamashita, Takuma*; Okutsu, Kenichi*; Kino, Yasushi*; Nakashima, Ryota*; Miyashita, Konan*; Yasuda, Kazuhiro*; Okada, Shinji*; Sato, Motoyasu*; Oka, Toshitaka; Kawamura, Naritoshi*; et al.

Fusion Engineering and Design, 169, p.112580_1 - 112580_5, 2021/08

A muon ($$mu$$) having 207 times larger mass of electron and the same charge as the electron has been known to catalyze a nuclear fusion between deuteron (d) and triton (t). These two nuclei are bound by $$mu$$ and form a muonic hydrogen molecular ion, dt$$mu$$. Due to the short inter-nuclear distance of dt$$mu$$, the nuclear fusion, d +t$$rightarrow alpha$$ + n + 17.6 MeV, occurs inside the molecule. This reaction is called muon catalyzed fusion ($$mu$$CF). Recently, the interest on $$mu$$CF is renewed from the viewpoint of applications, such as a source of high-resolution muon beam and mono-energetic neutron beam. In this work, we report a time evolution calculation of $$mu$$CF in a two-layered hydrogen isotope target.

Journal Articles

Analysis of residual stress in steel bar processed by cold drawing and straightening

Nishida, Satoru*; Nishino, Soichiro*; Sekine, Masahiko*; Oka, Yuki*; Harjo, S.; Kawasaki, Takuro; Suzuki, Hiroshi; Morii, Yukio*; Ishii, Yoshinobu*

Materials Transactions, 62(5), p.667 - 674, 2021/05

 Times Cited Count:0 Percentile:0(Materials Science, Multidisciplinary)

Journal Articles

Measurement of displacement cross section for proton in the kinetic energy range from 0.4 GeV to 3 GeV

Meigo, Shinichiro; Matsuda, Hiroki; Iwamoto, Yosuke; Yoshida, Makoto*; Hasegawa, Shoichi; Maekawa, Fujio; Iwamoto, Hiroki; Nakamoto, Tatsushi*; Ishida, Taku*; Makimura, Shunsuke*

JPS Conference Proceedings (Internet), 33, p.011050_1 - 011050_6, 2021/03

R&D of the beam window is crucial in the ADS, which serves as a partition between the accelerator and the target region. Although the displacement per atom (DPA) is used to evaluate the damage on the window, experimental data on the displacement cross section is scarce in the energy region above 20 MeV. We started to measure the displacement cross section for the protons in the energy region between 0.4 to 3 GeV. The displacement cross section can be derived by resistivity change divided by the proton flux and the resistivity change per Frankel pair on cryo-cooled sample to maintain damage. Experiments were conducted at the 3 GeV proton synchrotron at the J-PARC Center, and aluminum and copper was used as samples. As a result of comparison between the present experiment and the calculation of the NRT model, which is widely used for calculation of the displacement cross section, it was found that the calculation of the NRT model overestimated the experiment by about 3 times.

Journal Articles

Measurement of displacement cross-sections of copper and iron for proton with kinetic energies in the range 0.4 - 3 GeV

Matsuda, Hiroki; Meigo, Shinichiro; Iwamoto, Yosuke; Yoshida, Makoto*; Hasegawa, Shoichi; Maekawa, Fujio; Iwamoto, Hiroki; Nakamoto, Tatsushi*; Ishida, Taku*; Makimura, Shunsuke*

Journal of Nuclear Science and Technology, 57(10), p.1141 - 1151, 2020/10

 Times Cited Count:3 Percentile:76.41(Nuclear Science & Technology)

To estimate the structural damages of materials in accelerator facilities, displacement per atom (dpa) is widely employed as a damage index, calculated based on the displacement cross-section obtained using a calculation model. Although dpa is applied as standard, the experimental data of the displacement cross-section for a proton in the energy region above 20 MeV are scarce. Among the calculation models, difference of about factor 8 exist, so that the experimental data of the cross-section are crucial to validate the model. To obtain the displacement cross-section, we conducted experiments at J-PARC. The displacement cross-section of copper and iron was successfully obtained for a proton projectile with the kinetic energies, 0.4 - 3 GeV. The results were compared with those obtained using the widely utilized Norgertt-Robinson-Torrens (NRT) model and the athermal-recombination-corrected (arc) model based on molecular dynamics. It was found that the NRT model overestimates the present displacement cross-section by 3.5 times. The calculation results obtained using with the arc model based on the Nordlund parameter show remarkable agreement with the experimental data. It can be concluded that the arc model must be employed for the dpa calculation for the damage estimation of copper and iron.

Journal Articles

Measurement of displacement cross section of structural materials utilized in the proton accelerator facilities with the kinematic energy above 400 MeV

Meigo, Shinichiro; Matsuda, Hiroki; Iwamoto, Yosuke; Yoshida, Makoto*; Hasegawa, Shoichi; Maekawa, Fujio; Iwamoto, Hiroki; Nakamoto, Tatsushi*; Ishida, Taku*; Makimura, Shunsuke*

EPJ Web of Conferences, 239, p.06006_1 - 06006_4, 2020/09

 Times Cited Count:0 Percentile:0.19

R&D of the beam window is crucial in the ADS, which serves as a partition between the accelerator and the target region. Although the displacement per atom (DPA) is used to evaluate the damage on the window, experimental data on the displacement cross section is scarce in the energy region above 20 MeV. We started to measure the displacement cross section for the protons in the energy region between 0.4 to 3 GeV. The displacement cross section can be derived by resistivity change divided by the proton flux and the resistivity change per Frankel pair on cryo-cooled sample to maintain damage. Experiments were conducted at the 3 GeV proton synchrotron at the J-PARC Center, and copper was used as samples. As a result of comparison between the present experiment and the calculation of the NRT model, which is widely used for calculation of the displacement cross section, it was found that the calculation of the NRT model overestimated the experiment by about 3 times.

JAEA Reports

Final report on feasibility study of Pu monitoring and solution measurement of high active liquid waste containing fission product at Reprocessing Facility

Sekine, Megumi; Matsuki, Takuya; Suzuki, Satoshi*; Tsutagi, Koichi; Nishida, Naoki; Kitao, Takahiko; Tomikawa, Hirofumi; Nakamura, Hironobu; LaFleur, A.*; Browne, M.*

JAEA-Technology 2019-023, 160 Pages, 2020/03

JAEA-Technology-2019-023.pdf:9.43MB

The International Atomic Energy Agency (IAEA) has proposed in its Research and Development plan (STR-385), the development of technology to enable real-time flow measurement of nuclear material as a part of an advanced approach to effective and efficient safeguards for reprocessing facilities. To address this, Japan Atomic Energy Agency (JAEA) has been tackling development of a new detector to enable monitoring of Pu in solutions with numerous FPs as a joint research program with U.S. DOE to cover whole reprocessing process. In this study, High Active Liquid Waste (HALW) Storage Facility in Tokai Reprocessing Plant was used as the test field. At first, the design information of HALW storage tank and radiation (type and intensity) were investigated to develop a Monte Carlo N-Particle Transport Code (MCNP) model. And then, dose rate distribution outside/ inside of the concrete cell where the HALW tank is located was measured to design new detectors and check MCNP model applicability. Using the newly designed detectors, gamma rays and neutron were continuously measured at the outside/ inside of the concrete cell to assess the radiation characteristics and to optimize detector position. Finally, the applicability for Pu monitoring technology was evaluated based on the simulation results and gamma-ray/neutron measurement results. We have found that there is possibility to monitor the change of Pu amount in solution by combination both of gamma-ray and neutron measurement. The results of this study suggested the applicability and capability of the Pu motoring to enhance safeguards for entire reprocessing facility which handles Pu with FP as a feasibility study. This is final report of this project.

Journal Articles

Measurement of displacement cross section of structural materials utilized in the proton accelerator facilities with the kinematic energy above 400 MeV

Meigo, Shinichiro; Matsuda, Hiroki; Iwamoto, Yosuke; Yoshida, Makoto*; Hasegawa, Shoichi; Maekawa, Fujio; Iwamoto, Hiroki; Nakamoto, Tatsushi*; Ishida, Taku*; Makimura, Shunsuke*

JPS Conference Proceedings (Internet), 28, p.061004_1 - 061004_6, 2020/02

no abstracts in English

Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:9 Percentile:59.67(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Measurement of displacement cross-section for structural materials in High-Power Proton Accelerator Facility

Meigo, Shinichiro; Matsuda, Hiroki; Iwamoto, Yosuke; Iwamoto, Hiroki; Hasegawa, Shoichi; Maekawa, Fujio; Yoshida, Makoto*; Ishida, Taku*; Makimura, Shunsuke*; Nakamoto, Tatsushi*

Proceedings of 9th International Particle Accelerator Conference (IPAC '18) (Internet), p.499 - 501, 2018/06

no abstracts in English

Journal Articles

Effect of rattling motion without cage structure on lattice thermal conductivity in LaOBiS$$_{2-x}$$Se$$_x$$

Lee, C. H.*; Nishida, Atsuhiro*; Hasegawa, Takumi*; Nishiate, Hirotaka*; Kunioka, Haruno*; Kawamura, Seiko; Nakamura, Mitsutaka; Nakajima, Kenji; Mizuguchi, Yoshikazu*

Applied Physics Letters, 112(2), p.023903_1 - 023903_4, 2018/01

 Times Cited Count:20 Percentile:82.58(Physics, Applied)

Low energy phonons in LaOBiS$$_{2-x}$$Se$$_x$$ are studied using inelastic neutron scattering. Dispersionless flat phonon branches that are mainly associated with a large vibration of Bi atoms are observed at a relatively low energy of $$E$$ = 6 - 6.7 meV. The phonon energy softens upon Se doping owing to its heavier atomic mass than S atom and the expansion of lattice constant. Simultaneously, the lattice thermal conductivity lowered upon Se doping as the same manner of the phonon softening. These suggest that despite the lack of an oversized cage in LaOBiS$$_{2-x}$$Se$$_x$$, rattling motions of Bi atoms can scatter phonon like rattling in cage compounds, contributing to enhance the thermoelectric property.

Journal Articles

Estimation of the vertical distribution of radiocesium in soil on the basis of the characteristics of $$gamma$$-ray spectra obtained via aerial radiation monitoring using an unmanned helicopter

Ochi, Kotaro; Sasaki, Miyuki; Ishida, Mutsushi*; Hamamoto, Shoichiro*; Nishimura, Taku*; Sanada, Yukihisa

International Journal of Environmental Research and Public Health, 14(8), p.926_1 - 926_14, 2017/08

 Times Cited Count:2 Percentile:18.76(Environmental Sciences)

After the Fukushima Daiichi Nuclear Power Plant accident, the vertical distribution of radiocesium in soil has been investigated to better understand the behavior of radiocesium in the environment. The typical method used for measuring the vertical distribution of radiocesium is troublesome because it requires collection and measurement of the activity of soil samples. In this study, we established a method of estimating the vertical distribution of radiocesium by focusing on the characteristics of $$gamma$$-ray spectra obtained via aerial radiation monitoring using an unmanned helicopter. In this method, the change in the ratio of direct $$gamma$$ rays to scattered $$gamma$$ rays at various depths in the soil was utilized to quantify the vertical distribution of radiocesium. The results show a positive correlation between the abovementioned and the actual vertical distributions of radiocesium measured in the soil samples.

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:14 Percentile:68.57(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Outline of new AIJ guideline publication as "Introduction to shock-resistant design of buildings"

Mukai, Yoichi*; Nishida, Akemi; Hamamoto, Takuji*; Sakino, Yoshihiro*; Ikawa, Nozomu*; Takeuchi, Yoshitaka*; Chiba, Fumihiko*; Hori, Yoshiro*

Proceedings of 12th International Conference on Shock and Impact Loads on Structures (SI 2017) (USB Flash Drive), p.329 - 338, 2017/06

AIJ guideline against accidental actions is published as a book, "Introduction to shock-resistant design of buildings". This contains respect to objective and scope, design loads, member design, design criteria, non-structural element, progressive collapse and design examples. The objective of AIJ guideline is to minimize human and property damage in building structures against accidental actions based on the performance-based design. Target buildings for design are offices, apartments, hotels, hospitals, schools and public buildings. Structural systems of the buildings are limited to reinforced concrete and steel frame structures. In this paper, the overview of the AIJ guideline is introduced.

Journal Articles

Design loads and structural member modelling to shock-resistant design of buildings

Ikawa, Nozomu*; Mukai, Yoichi*; Nishida, Akemi; Hamamoto, Takuji*; Kano, Toshiya*; Ota, Toshiro*; Nakamura, Naohiro*; Komuro, Masato*; Takeuchi, Masato*

Proceedings of 12th International Conference on Shock and Impact Loads on Structures (SI 2017) (USB Flash Drive), p.259 - 268, 2017/06

Accidental actions on building structures involve impact and explosion loads. The design loads due to impact are determined by experiment data, impact simulation and energetics approach. These loads are presented in the form of load-time (F-t) curves caused by collision and explosion. It is assumed that the structure is rigid and immovable and that impacting body absorbs all the energy (i.e., hard impact condition is supposed), because this assumption gives conservative results in general. Responses of individual structural members directly-subjected to an impulsive load are evaluated. These responses are classified into three types; impulsive response, dynamic response, and quasi-static response. The maximum responses are basically estimated by direct integration method with a single-degree-of-freedom (SDOF) model. The procedure of the SDOF modelling based on the classification of types of members and failure modes is proposed in AIJ guideline.

Journal Articles

Criteria for performance evaluation and numerical verification to shock-resistant design of buildings

Nishida, Akemi; Mukai, Yoichi*; Hamamoto, Takuji*; Kushibe, Atsumichi*; Komuro, Masato*; Ohashi, Yasuhiro*; Obi, Hirotoshi*; Tsubota, Haruji

Proceedings of 12th International Conference on Shock and Impact Loads on Structures (SI 2017) (USB Flash Drive), p.379 - 388, 2017/06

Some design examples are presented to evaluate the shock-resistant performance of target buildings to confirm the applicability of the design criteria of AIJ guideline. Dynamic analyses are performed using SDOF model of an individual member on which an impulsive load is acting. Furthermore, analyses are performed using finite element model for the same member, and the results are compared to the results of the corresponding SDOF model for validation. Frame building structure model which is supposed to be located at the corner of a crossroad is investigated as an example. Dynamic responses and the corresponding damage states are illustrated for this building subjected to shock loads due to road vehicle crashes. As a non-structure member case, examples of window glass destruction subjected to internal and external gas explosions are presented.

Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

 Times Cited Count:39 Percentile:90.77(Physics, Applied)

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800$$^{circ}$$C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline $$alpha$$- and $$beta$$-phase Ga$$_{2}$$O$$_{3}$$ grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

JAEA Reports

Preliminary tests on adsorption / desorption of alumina adsorbents

Suzuki, Yoshitaka; Ishida, Takuya*; Suzuki, Yumi*; Matsukura, Minoru*; Kurosaki, Fumio*; Nishikata, Kaori; Mimura, Hitoshi*; Tsuchiya, Kunihiko

JAEA-Technology 2016-027, 24 Pages, 2016/12

JAEA-Technology-2016-027.pdf:4.15MB

The research and development (R&D) on the production of $$^{99}$$Mo/$$^{99m}$$Tc by (n,$$gamma$$) method has been carried out in the Neutron Irradiation and Testing Reactor Center. The $$^{99}$$Mo production by (n,$$gamma$$) reaction is a simple and easy method, and it also is advantageous from viewpoints of nuclear proliferation resistance and waste management. However, it is difficult to produce the $$^{99m}$$Tc solution with high radioactive concentration because the specific radioactivity of $$^{99}$$Mo by this method is extremely low. Up to now, various Mo absorbents such as Polyzirconium Compound (PZC) and Polytitanium Compound (PTC) have been developed with high Mo adsorption efficiency. It is necessary for utilization to the generator of these absorbents to evaluate the effect of elements containing these absorbents and to assure the quality of $$^{99m}$$Tc solution. In this report, the status of R&D of the Mo adsorbents was investigated. The alumina as Mo adsorbent, which uses in medical $$^{99}$$Mo/$$^{99m}$$Tc generator, was focused and Mo adsorption/desorption properties of three kinds of alumina was evaluated by different properties such as crystal structure and specific surface.

Journal Articles

New muonium HFS measurements at J-PARC/MUSE

Strasser, P.*; Aoki, Masaharu*; Fukao, Yoshinori*; Higashi, Yoshitaka*; Higuchi, Takashi*; Iinuma, Hiromi*; Ikedo, Yutaka*; Ishida, Keiichi*; Ito, Takashi; Iwasaki, Masahiko*; et al.

Hyperfine Interactions, 237(1), p.124_1 - 124_9, 2016/12

 Times Cited Count:6 Percentile:92.96

Journal Articles

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

 Times Cited Count:31 Percentile:85.09(Physics, Applied)

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al$$_{2}$$O$$_{3}$$ films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

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