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Liao, W.*; Ito, Kojiro*; Abe, Shinichiro; Mitsuyama, Yukio*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 68(6), p.1228 - 1234, 2021/06
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Secondary cosmic-ray neutron-induced single event upset (SEU) is a cause of soft errors on micro electronic devices. Multiple cell upsets (MCUs) are particularly serious problems since it is difficult to recover MCUs. In this study, we have performed irradiation tests of neutrons on 65-nm bulk SRAM at the national metrology institute of Japan (NMIJ) in Advanced Industrial Science and Technology (AIST) and measured SEU cross sections and MCU cross sections to investigate the effect on neutrons with the energies below 10 MeV on soft errors. It was found that SEU cross sections change drastically around 6 MeV. The proportion of MCU to total events does not change very much over the wide range of neutron energy. We also analyzed the total soft error rate (SER) of SEU and MCU by folding the neutron energy-dependent cross section and the flux spectra of the terrestrial neutron at New York and Tokyo. The calculated result indicates that the SER originating from the low-energy neutrons below 10 MeV is mostly negligible in the terrestrial environment.
Abe, Shinichiro; Sato, Tatsuhiko; Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Ito, Kojiro*; Hashimoto, Masanori*; Harada, Masahide; Oikawa, Kenichi; et al.
Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2020/04
Single event upsets (SEUs) caused by neutrons have been recognized as a serious reliability problem for microelectronic devices on the ground level. In our previous work, it was found that hydride placed in front of the memory chip has considerably impact on SEU cross sections because H ions generated via elastic scattering of neutrons with hydrogen atoms are only emitted in a forward direction. In this study, the effect of components neighboring transistors on neutron-induced SEUs was investigated for 65-nm bulk SRAMs by using PHITS. It was found that the shape of the SEU cross section around few MeV comes from the thickness and the position of components placed in front of transistors when that components do not contains hydrogen atoms. By considering components adjoin memory cells in the test board used in the simulation, measured data at J-PARC BL10 were reproduced well. In addition, it was found that the effect of components neighboring transistors on neutron-induced SERs does not negligible in terrestrial environment.
,-dioctyldiglycolamic acidShimojo, Kojiro; Nakai, Ayaka*; Okamura, Hiroyuki; Saito, Takumi*; Ohashi, Akira*; Naganawa, Hirochika
Analytical Sciences, 30(4), p.513 - 517, 2014/04
Times Cited Count：13 Percentile：45.64(Chemistry, Analytical)Shimojo, Kojiro; Aoyagi, Noboru; Saito, Takumi*; Okamura, Hiroyuki; Kubota, Fukiko*; Goto, Masahiro*; Naganawa, Hirochika
Analytical Sciences, 30(2), p.263 - 269, 2014/02
Times Cited Count：46 Percentile：86.69(Chemistry, Analytical)Okamura, Hiroyuki; Ikeda, Atsushi*; Saito, Takumi*; Aoyagi, Noboru; Naganawa, Hirochika; Hirayama, Naoki*; Umetani, Shigeo*; Imura, Hisanori*; Shimojo, Kojiro
Analytical Chemistry, 84(21), p.9332 - 9339, 2012/11
Times Cited Count：23 Percentile：64.19(Chemistry, Analytical)Okamura, Hiroyuki; Sakae, Hiroki*; Kidani, Keiji*; Hirayama, Naoki*; Aoyagi, Noboru; Saito, Takumi*; Shimojo, Kojiro; Naganawa, Hirochika; Imura, Hisanori*
Polyhedron, 31(1), p.748 - 753, 2012/01
Times Cited Count：28 Percentile：88.18(Chemistry, Inorganic & Nuclear)
studied by photoemission and soft X-ray absorption spectroscopiesUtsumi, Yuki*; Sato, Hitoshi*; Kurihara, Hidenao*; Maso, Hiroyuki*; Hiraoka, Koichi*; Kojima, Kenichi*; Tobimatsu, Komei*; Okochi, Takuo*; Fujimori, Shinichi; Takeda, Yukiharu; et al.
Physical Review B, 84(11), p.115143_1 - 115143_7, 2011/09
Times Cited Count：9 Percentile：40.24(Materials Science, Multidisciplinary)We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu by means of temperature-dependent hard X-ray photoemission spectroscopy (HX-PES), soft X-ray absorption spectroscopy (XAS), and soft X-ray photoemission spectroscopy (SX-PES) of the valence band. We have described the valence transition in YbInCu in terms of the charge transfer from the CB to Yb 4
states.
Kusakabe, Toshio*; Miyamoto, Yoshiharu*; Ishida, Rikiya*; Ito, Kojiro*; Kuroyanagi, Nobuhiro*; Nakai, Yota*; Shirai, Toshizo
Nuclear Instruments and Methods in Physics Research B, 205, p.600 - 604, 2003/05
Times Cited Count：6 Percentile：43.35(Instruments & Instrumentation)no abstracts in English
Nishina, Kojiro*; *; Miyoshi, Yoshinori; Suzaki, Takenori; Okuno, Hiroshi; Nomura, Yasushi; Mitake, Susumu*; ; Tonoike, Kotaro; *; et al.
Nihon Genshiryoku Gakkai-Shi, 38(4), p.262 - 271, 1996/00
no abstracts in English
Okuno, Hiroshi; Komuro, Yuichi; Nakajima, Ken; Nomura, Yasushi; Naito, Yoshitaka; Nishina, Kojiro*; *; *; Miyoshi, Yoshinori; *; et al.
JAERI-Tech 95-048, 168 Pages, 1995/10
no abstracts in English
-diketone fragmentsShimojo, Kojiro; Okamura, Hiroyuki; Ikeda, Atsushi; Saito, Takumi*; Hirayama, Naoki*; Umetani, Shigeo*; Imura, Hisanori*; Naganawa, Hirochika
no journal, ,
no abstracts in English
Okamura, Hiroyuki; Shimojo, Kojiro; Ikeda, Atsushi*; Saito, Takumi*; Aoyagi, Noboru; Hirayama, Naoki*; Umetani, Shigeo*; Imura, Hisanori*; Naganawa, Hirochika
no journal, ,
