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Search Results: Records 1-20 displayed on this page of 37

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Journal Articles

Surface temperature dependence on AlN film formation processes induced by supersonic N$$_{2}$$ molecular beam

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Denki Gakkai Rombunshi, C, 134(4), p.524 - 525, 2014/04

https://doi.org/10.1541/ieejeiss.134.524

Journal Articles

Chemical reaction dynamics on ultra-thin oxide layer formation at Ni(001) surface

Teraoka, Yuden; Iwai, Yutaro*; Yoshigoe, Akitaka; Okada, Ryuta

Dai-57-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.44 - 45, 2013/11

no abstracts in English

Journal Articles

Control of oxidation $$cdot$$ nitridation reactions at metal surfaces by molecular beams and their observation via synchrotron radiation photoemission spectroscopy, 2

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Dai-56-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.360 - 361, 2012/10

no abstracts in English

Oral presentation

Time-resolved observation of oxides on Ge(100)-2$$times$$1 surface at room temperature using synchrotron radiation XPS

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge is much attracting as a new material in future electronic devices and therfore oxidation of Ge crystal surfaces is now important. In this conference, we report that evolution of oxides on Ge(100)-2$$times$$1 surface up to saturated oxidation for thermal-O$$_{2}$$ and supersonic O$$_{2}$$ (2.2 eV) beams was studied by time-resolved observation using synchrotron radiation XPS. We found that Ge$$^{1+}$$/Ge$$^{2+}$$ is almost constant from early stages of oxidation to saturation.

Oral presentation

Incident energy dependence of initial sticking probability of O$$_{2}$$ at Ge(100)-2$$times$$1 surface at room temperature

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge and its oxidation are attracting widespread interest in the field of development of future electronic devices. In this conference, we report incident energy dependence of initial sticking probability for a Ge(100)-2$$times$$1 surface at room temperature. We obtained results which suggest two energy barriers for O$$_{2}$$ adsorption at around 0.1eV and 0.47 eV.

Oral presentation

Temperature dependence of Al(111) nitridation induced by supersonic N$$_{2}$$ molecular beams as observed by synchrotron photoemission spectroscopy

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Threshold energy to generate Ge$$^{3+}$$ state on Ge(111)-c(2$$times$$8) surface in O$$_{2}$$ molecular beam oxidation

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

We have studied oxidation of the Ge(111)-c(2$$times$$8) surface which is a candidate for a new channel material of n-type metal-oxide-semiconductor field-effect transistors because of its high electron mobility. In our previous work, we found that Ge$$^{n+}$$ oxidation state (n:1-3) is formed by supersonic O$$_{2}$$ beam of translational energy (E$$_{t}$$) of 2.3 eV, while oxidation states up to 2+ are observed in the case of thermal-O$$_{2}$$. Such difference depending on E$$_{t}$$ has not been reported in our knowledge. In this study, we investigate threshold energy for Ge$$^{3+}$$ generation using photoelectron spectroscopy with synchrotron radiation at BL23SU in SPring-8. We found that Ge$$^{3+}$$ component clearly appear over 1.0 eV region. This result implies that activated dissociative adsorption with threshold energy of 1.0 eV takes place.

Oral presentation

Oxidation reaction dynamics at Ni(001) surface by supersonic O$$_{2}$$ molecular beam

Teraoka, Yuden; Iwai, Yutaro*; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

Oral presentation

Surface Reaction Dynamics research Group; Surface reactions observed by X-ray photoemission spectroscopy, X-ray absorption spectroscopy, photoemission electron microscope

Teraoka, Yuden; Yoshigoe, Akitaka; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Hirao, Norie; Nishimura, Tetsuya; Baba, Yuji; Okada, Ryuta; Iwai, Yutaro*

no journal, , 

no abstracts in English

Oral presentation

Potential energy barrier of O$$_{2}$$ adsorption on Ni(001) surface at room temperature

Iwai, Yutaro*; Teraoka, Yuden; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

Oral presentation

Effects of surface charge modulation in synchrotron radiation photoemission spectroscopy of Cs-contained vermiculite

Teraoka, Yuden; Iwai, Yutaro*; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

no abstracts in English

Oral presentation

Synchrotron radiation photoelectron spectroscopy analysis of oxides at Ge(100) surface after atmospheric oxidation

Yoshigoe, Akitaka; Okada, Ryuta; Iwai, Yutaro*; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has been important because it is candidate for a substitute channel material for future electronic devices. In this talk, we present synchrotron radiation XPS study of the oxidation of clean Ge(100) in ambient condition. The analysis of the oxidation states of surface oxides were conducted using SUREAC2000 at BL23SU of SPring-8. We found the surface oxide up to +4 oxidation stat after oxidation over 10 hours, which is strong contrast to the UHV oxidation reported by us.

Oral presentation

Translational energy dependence of initial sticking probability of O$$_{2}$$ on Ge(100)-2$$times$$1 surface at room temperature

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

There is considerable interest in germanium as a channel material for developing Si devices because of its high carrier mobility. Thus, Ge oxides and its growth mechanism are attracting widespread interest. In this conference, we report on the dependence of adsorption processes in room-temperature oxidation at a Ge(100)-2$$times$$1 surface on translational energy of O$$_{2}$$ clarified by the measurement of initial sticking probability. All experiments were performed using SUREAC2000 at BL23SU of SPring-8. It was found that adsorption mechanism changes around 0.1 eV. Furthermore, we found out two energy barriers for the adsorption of O$$_{2}$$ with translational energy of 2.2 eV.

Oral presentation

Evolution of oxidation states on Ge(100)-2$$times$$1 surface at 300 K

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has received much attention as a new channel material for metal-insulator-semiconductor field-effect-transistors due to its high carrier mobility. However, fundamental aspects of oxide growth mechanisms remain still unclear. In this conference, we report evolution of oxides for oxidation of a Ge(100)-2$$times$$1 surface using O$$_{2}$$ at 300 K. In-situ observation by synchrotron radiation photoelectron spectroscopy was conducted using SUREAC2000 at BL23SU in SPring-8. We found that Ge$$^{2+}$$/Ge$$^{1+}$$ ratio is almost 0.5 until saturation. This result indicates that dissociative chemisorption takes place at bridge and backbond sites of a Ge-Ge dimer and the number of this oxide increases with O$$_{2}$$ dose.

Oral presentation

Thermal annealing effects below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Thermal stability of AlN layer formed by translational kinetic energy induced N$$_{2}$$ adsorption on Al(111) surface

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Analysis of nitrogen distribution in nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Takaoka, Tsuyoshi*; Jinno, Muneaki*; Teraoka, Yuden; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Film quality depending on film forming temperature and its thermal denaturation below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Analysis of Al(111) nitridation induced by supersonic N$$_{2}$$ molecular beam

Jinno, Muneaki*; Teraoka, Yuden; Harries, J.; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Okada, Ryuta; Iwai, Yutaro*; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

SR-XPS analysis of nitride thin films on Al(111) induced by translational kinetic energy of N$$_{2}$$ molecule

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

37 (Records 1-20 displayed on this page)