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Journal Articles

Characterization of charge generated in silicon carbide n$$^{+}$$p diodes using transient ion beam-induced current

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04

 Times Cited Count:9 Percentile:41.31(Instruments & Instrumentation)

In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.

Journal Articles

Radiation effect on pn-SiC diode as a detector

Kinoshita, Akimasa*; Iwami, Motohiro*; Kobayashi, Kenichi*; Nakano, Itsuo*; Tanaka, Reisaburo*; Kamiya, Tomihiro; Oi, Akihiko; Oshima, Takeshi; Fukushima, Yasutaka*

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.213 - 220, 2005/04

 Times Cited Count:24 Percentile:14.53(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Analysis of transient current induced in silicon carbide diodes by oxygen-ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Proceedings of 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10

no abstracts in English

Journal Articles

Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum

Oi, Akihiko; Oshima, Takeshi; Yoshikawa, Masahito; Lee, K. K.; Iwami, Motohiro*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.831 - 834, 2002/05

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

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