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Journal Articles

Evaluation of photocatalytic abilities by variation of conductivity and dimethyl sulfoxide; Photocatalytically active TiO$$_{2}$$-coated wire mesh prepared via a double-layer coating method

Mori, Masanobu*; Sugita, Tsuyoshi; Fujii, Kengo*; Yamazaki, Taiki*; Isaka, Mayu*; Kobayashi, Kentaro*; Iwamoto, Shinji*; Itabashi, Hideyuki*

Analytical Sciences, 34(12), p.1449 - 1453, 2018/12

 Times Cited Count:2 Percentile:8.13(Chemistry, Analytical)

The photocatalyst coating stainless-steel wire mesh (TiO$$_{2}$$-WM) was prepared by double-layer coating method. The TiO$$_{2}$$-WM was evaluated using flow analytical system, which included the reactor and conductimetric detector (FAS-CD). The DMSO decomposition test through the FAS-CD reveal that photocatalytst was stable coating on the stainless-steel wire mesh.

Journal Articles

Measurement of the $$^{77}$$Se($$gamma$$, n) cross section and uncertainty evaluation of the $$^{79}$$Se(n, $$gamma$$) cross section

Kitatani, Fumito; Harada, Hideo; Goko, Shinji*; Iwamoto, Nobuyuki; Utsunomiya, Hiroaki*; Akimune, Hidetoshi*; Toyokawa, Hiroyuki*; Yamada, Kawakatsu*; Igashira, Masayuki*

Journal of Nuclear Science and Technology, 53(4), p.475 - 485, 2016/04

 Times Cited Count:2 Percentile:21.33(Nuclear Science & Technology)

Journal Articles

Progress of divertor simulation research toward the realization of detached plasma using a large tandem mirror device

Nakashima, Yosuke*; Takeda, Hisahito*; Ichimura, Kazuya*; Hosoi, Katsuhiro*; Oki, Kensuke*; Sakamoto, Mizuki*; Hirata, Mafumi*; Ichimura, Makoto*; Ikezoe, Ryuya*; Imai, Tsuyoshi*; et al.

Journal of Nuclear Materials, 463, p.537 - 540, 2015/08

 Times Cited Count:18 Percentile:84.56(Materials Science, Multidisciplinary)

Journal Articles

Development of divertor simulation research in the GAMMA 10/PDX tandem mirror

Nakashima, Yosuke*; Sakamoto, Mizuki*; Yoshikawa, Masayuki*; Oki, Kensuke*; Takeda, Hisahito*; Ichimura, Kazuya*; Hosoi, Katsuhiro*; Hirata, Mafumi*; Ichimura, Makoto*; Ikezoe, Ryuya*; et al.

Proceedings of 25th IAEA Fusion Energy Conference (FEC 2014) (CD-ROM), 8 Pages, 2014/10

Journal Articles

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/06

 Times Cited Count:0 Percentile:0.01

Journal Articles

Development of proposed guideline of flow-induced vibration evaluation for hot-leg piping in a sodium-cooled fast reactor

Sakai, Takaaki; Yamano, Hidemasa; Tanaka, Masaaki; Ono, Ayako; Ohshima, Hiroyuki; Kaneko, Tetsuya*; Hirota, Kazuo*; Sago, Hiromi*; Xu, Y.*; Iwamoto, Yukiharu*; et al.

Proceedings of 15th International Topical Meeting on Nuclear Reactor Thermal Hydraulics (NURETH-15) (USB Flash Drive), 13 Pages, 2013/05

The development of flow-induced vibration evaluation methodology has reached a milestone that separate-effect experimental data under a high Reynolds number regime including swirl and deflected inflow conditions are available for the validation of the methodology. On the other hand, technical standards are desirable to be documented for designers of sodium-cooled fast reactors. From such a background, the documentation of a flow-induced vibration design guideline has been made for the hot-leg piping of Japan sodium-cooled fast reactor. This paper describes the design guideline of the flow-induced vibration evaluation methodology, which has been informed from main separate-effect experiments, as well as supplemental interpretation for the guideline.

Journal Articles

$$E_1/E_2$$ traps in 6H-SiC studied with Laplace deep level transient spectroscopy

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; Hamilton, B.*; et al.

Applied Physics Letters, 102(3), p.032104_1 - 032104_4, 2013/01

 Times Cited Count:11 Percentile:45.58(Physics, Applied)

Journal Articles

Radioactive tracer $$^{132}$$Cs (TRACs) for Fukushima Nuclear Power Plant accident

Nagai, Yasuki; Makii, Hiroyuki; Namiki, Shinji; Iwamoto, Osamu; Iwamoto, Nobuyuki; Sawahata, Hiroyuki*

Journal of the Physical Society of Japan, 81(8), p.085003_1 - 085003_2, 2012/08

 Times Cited Count:1 Percentile:11.09(Physics, Multidisciplinary)

We propose to use the radionuclide $$^{132}$$Cs as a tracer. $$gamma$$-ray energy of the most intense line from the decay of $$^{132}$$Cs is 668 keV, which is very near to that of the 662 keV from the decay of $$^{137}$$Cs, while the half-life of $$^{132}$$Cs is 6.5 d. $$^{132}$$Cs can be produced by nuclear reactions such as $$^{133}$$Cs(n,2n)$$^{132}$$Cs, $$^{133}$$Cs(r,n)$$^{132}$$Cs or $$^{132}$$Xe(p,n)$$^{132}$$Cs. The $$^{132}$$Cs tracer would be useful in the quantitative studies of radionuclide $$^{137}$$Cs contaminant in human, and in any experimental studies in the minimization of radionuclide $$^{137}$$Cs contamination in agricultural and stock farming products.

Journal Articles

Prediction of unsteady flow field in a primary circuit hot-leg piping of a sodium-cooled fast reactor

Tanaka, Masaaki; Sago, Hiromi*; Iwamoto, Yukiharu*; Ebara, Shinji*; Ono, Ayako; Murakami, Takahiro*; Hayakawa, Satoshi*

Nihon Kikai Gakkai Rombunshu, B, 78(792), p.1392 - 1396, 2012/08

A study on flow induced vibration in the primary cooling system of Japan Sodium cooled Fast Reactor (JSFR) consisting of large diameter pipe and pipe elbow with short curvature radius ("short-elbow") has been conducted. Flow-induced vibration in the short-elbow is an important issue in design study of JSFR, because it may affect to structural integrity of the pipe. In this paper, unsteady flow characteristics in the JSFR short-elbow pipe related to the large-scale eddy motion were estimated based on knowledge from existing studies for curved pipes and scaled water experiments and numerical simulations for the JSFR hot-leg piping.

Journal Articles

X-ray diffraction recording from single axonemes of eukaryotic flagella

Nishiura, Masaya*; Toba, Shiori*; Takao, Daisuke*; Miyashiro, Daisuke*; Sakakibara, Hitoshi*; Matsuo, Tatsuhito; Kamimura, Shinji*; Oiwa, Kazuhiro*; Yagi, Naoto*; Iwamoto, Hiroyuki*

Journal of Structural Biology, 178(3), p.329 - 337, 2012/06

 Times Cited Count:3 Percentile:9(Biochemistry & Molecular Biology)

We report the first X-ray diffraction patterns recorded from single axonemes of eukaryotic flagella with a diameter of only $$<$$0.2 $$mu$$m, by using the technique of cryomicrodiffraction. A spermatozoon isolated from Drosophila melanogaster, was mounted straight in a glass capillary, quickly frozen and its 800-$$mu$$m segment was irradiated end-on with intense synchrotron radiation X-ray microbeams (diameter, 2 $$mu$$m) at 74 K. Well-defined diffraction patterns were recorded, consisting of a large number of isolated reflection spots. The patterns had features of an 18-fold rotational symmetry as expected from the axonemal structure. The diffraction patterns were compared with the results of model calculations based on a published electron micrograph of the Drosophila axoneme. The comparison provided information on the native state of axoneme, including estimates of axonemal diameter and interdoublet spacing.

Journal Articles

Peak degradation of heavy-ion induced transient currents in 6H-SiC MOS capacitor

Makino, Takahiro; Iwamoto, Naoya*; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.469 - 472, 2012/05

 Times Cited Count:1 Percentile:56.54

The peak amplitude of ion induced transient current in n-type 6H-SiC MOS capacitors decreased as the number of incident ions increased and the decrease was recovered to the initial value by applying a positive bias at +1 V. In addition, we monitored a change in the capacitance for the MOS capacitors during ion irradiation. The capacitances increase as the number of incident ion increase. Thus, the result obtained in this study indicates that the depletion layer decreased as the increasing number of incident ions and saturated. Since the number of incident ions at the peak current saturation corresponds to the saturation of the capacitance, we can conclude that the decrease in peak current comes from the decrease in the depletion layer. In addition, the generation of electron-hole pairs by incident ion may result in the formation of an inversion layer. This would have the effect of shielding the charge carriers from the applied bias further reducing the depletion layer width.

Journal Articles

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy; Their impact on the degraded charge collection efficiency

Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.267 - 270, 2012/05

 Times Cited Count:1 Percentile:56.54

In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p$$^{+}$$n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1$$times$$10$$^{15}$$ /cm$$^{2}$$. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from $$^{241}$$Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X$$_{1}$$ and X$$_{2}$$ are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X$$_{2}$$ is more critical to the charge collection than X$$_{1}$$.

Journal Articles

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p$$^+$$n diode irradiated with high-energy electrons

Iwamoto, Naoya; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(6), p.3328 - 3332, 2011/12

 Times Cited Count:5 Percentile:39.92(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Photoneutron cross sections for $$^{118-124}$$Sn and the $$gamma$$-ray strength function method

Utsunomiya, Hiroaki*; Goriely, S.*; Kamata, Masaki*; Akimune, Hidetoshi*; Kondo, Takeo*; Ito, Osamu*; Iwamoto, Chihiro*; Yamagata, Tamio*; Toyokawa, Hiroyuki*; Lui, Y.-W.*; et al.

Physical Review C, 84(5), p.055805_1 - 055805_6, 2011/11

 Times Cited Count:42 Percentile:89.77(Physics, Nuclear)

Photoneutron cross sections were measured for $$^{118}$$Sn, $$^{119}$$Sn, $$^{120}$$Sn, $$^{122}$$Sn, and $$^{124}$$Sn near neutron threshold with quasi-monochromatic laser-Compton scattering $$gamma$$-rays. A systematic analysis of the present photoneutron data and existing neutron-capture data is made using the $$gamma$$-ray strength function on the basis of the HFB+QRPA model of E1 strength supplemented with a pygmy dipole resonance, which was deduced from a previous study on $$^{116}$$Sn and $$^{117}$$Sn. Radiative neutron capture cross sections for two radioactive nuclei, $$^{121}$$Sn and $$^{123}$$Sn, are deduced through the $$gamma$$-ray strength function method.

Journal Articles

The $$gamma$$SF method

Utsunomiya, Hiroaki*; Goriely, S.*; Akimune, Hidetoshi*; Yamagata, Tamio*; Kondo, Takeo*; Iwamoto, Chihiro*; Okamoto, Akiyuki*; Harada, Hideo; Kitatani, Fumito; Goko, Shinji*; et al.

AIP Conference Proceedings 1377, p.255 - 259, 2011/10

 Times Cited Count:0 Percentile:0.05

Journal Articles

Application of the $$gamma$$SF method to palladium

Utsunomiya, Hiroaki*; Goriely, S.*; Arteaga, D. P.*; Daoutidis, I.*; Akimune, Hidetoshi*; Yamagata, Tamio*; Kondo, Takeo*; Iwamoto, Chihiro*; Kamata, Masaki*; Ito, Osamu*; et al.

AIP Conference Proceedings 1377, p.450 - 452, 2011/10

 Times Cited Count:0 Percentile:0.05

Journal Articles

Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

AIP Conference Proceedings 1336, p.660 - 664, 2011/05

 Times Cited Count:1 Percentile:49.03

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H- and 6H-SiC epitaxial layers, and transient currents induced in SiC MOS capacitors by ion incidence were investigated. Transient Ion Beam Induced Current (TIBIC) measurements were performed using 15 MeV oxygen ions. As a result, the TIBIC peak height decreased with increasing number of incident ions. For example, the TIBIC signal peak for a 4H-SiC MOS capacitor at a reverse bias of 15 V was 0.18 mA at the beginning. The peak decreased to be 0.10 mA after 1800 ion irradiation. After that, the forward bias of 1 V was applied to the MOS capacitor and the TIBIC measurements were carried out under the same conditions. As a result, the peak height was recovered to be 0.18 mA. In general, the response of charge de-trapping by deep levels in wide bandgap semiconductors is very slow and they act as fixed charge. Since dense electron-hole pairs are generated by ion incident and holes move to the SiO$$_{2}$$/SiC interface by the electric field (applied reverse bias). Therefore, the decrease in TIBIC signal peak can be interpreted in terms of the recombination of negatively charged acceptor type deep levels with ion induced holes.

Journal Articles

Oxygen ion induced charge in SiC MOS capacitors irradiated with $$gamma$$-rays

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Nozaki, Shinji*; Kojima, Kazutoshi*

Materials Science Forum, 679-680, p.362 - 365, 2011/03

 Times Cited Count:1 Percentile:58.42

Charge induced in the 6H-Silicon Carbide (SiC) n Metal-Oxide-Semiconductor (MOS) capacitors by 15 MeV oxygen ion microbeams was evaluated using Transient Ion Beam Induced Current (TIBIC) before and after $$gamma$$-ray irradiations. With increasing number of incident ions, the peak height of TIBIC signals decreases and the fall time increases. The decrease in TIBIC peak finally saturated. The peak height of the TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to the oxide electrode. This result can be explained in terms of the existence of deep hole traps. Small decrease in both TIBIC signal peak and collected charge was observed due to $$gamma$$-ray irradiation.

Journal Articles

Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(1), p.305 - 313, 2011/02

 Times Cited Count:9 Percentile:58.76(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike

Onoda, Shinobu; Makino, Takahiro; Iwamoto, Naoya*; Vizkelethy, G.*; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 57(6), p.3373 - 3379, 2010/12

no abstracts in English

39 (Records 1-20 displayed on this page)