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Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

The Investigation of 4H-SiC/SiO$$_{2}$$ interfaces by optical and electrical measurements

Ishida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1013 - 1016, 2002/00

 Times Cited Count:4 Percentile:20.3(Materials Science, Multidisciplinary)

no abstracts in English

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