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Oral presentation

Real-time XPS observation of oxidation processes on Si alloy surfaces; Comparison of mixing effects of C and Ge

Hozumi, Hideaki*; Kaga, Toshihide*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

In order to clarify the difference of the oxidation reaction mechanism between an Si$$_{1-x}$$Ge$$_{x}$$ and Si$$_{1-x}$$C$$_{x}$$ alloy layer, the real time photoelectron spectroscopy was employed for observing the oxidation rate and behavior of Ge and C atoms during oxidation. The experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. By comparing between the both alloy surfaces, it is found that initial oxidation rate on the SiGe alloy was slower than that on the SiC alloy. Here, only Si atoms were oxidized on the both alloy surfaces. C atoms were condensed at SiO$$_{2}$$/Si interface and 3C-SiC alloy were formed. Ge atoms were diffused into Si substrate. These facts are resulted in the oxidation-strain-induced point-defect generation, in which C and Ge atoms are exchanged for Si atoms through the vacancies.

Oral presentation

Real-time synchrotron radiation photoelectron spectroscopic observation of high temperature thermal anneal processes of oxidized graphene

Hozumi, Hideaki*; Yamaguchi, Hisato*; Kaga, Toshihide*; Eda, Goki*; Mattevi, C.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Yamada, Takatoshi*; et al.

no journal, , 

In order to clarify the time evolution of the chemical bonding state during thermal reduction of graphene oxide (GO), real-time photoelectron spectroscopy was employed for observing the thermal reduction kinetics of GO. The GO was prepared by the modified Hummer method. The experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. The XPS measurements were performed simultaneously during the annealing at 473 K, 673 K, 873 K, and 1073 K. The C1s photoelectron spectra are decomposed by 8 components. The $$pi$$-$$pi^*$$ transition loss peak intensity is propotional to the intensity of sp$$^{2}$$ graphene components with temperature elevation. In addition, defect intensity increased in proportion with the sp$$^{2}$$ graphene intensity. These facts indicate that defects were formed on the graphene during reduction and these defects cause the recovery of electric conductivity, that is, the appearance of Fermi edge.

Oral presentation

Real time XPS observation of oxidized graphene reduction processes

Ogawa, Shuichi*; Yamaguchi, Hisato*; Hozumi, Hideaki*; Kaga, Toshihide*; Eda, Goki*; Mattevi, C.*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Yamada, Takatoshi*; et al.

no journal, , 

no abstracts in English

Oral presentation

Temperature dependence of chemical bonding states during annealing on diamond (111) surfaces

Ogawa, Shuichi*; Yamada, Takatoshi*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Kaga, Toshihide*; Hozumi, Hideaki*; Hasegawa, Masataka*; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

no abstracts in English

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