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Journal Articles

Oxidation-enhanced condensation of Ge atoms on Si$$_{1-x}$$Ge$$_{x}$$ alloy layer studied by real-time photoelectron spectroscopy

Ogawa, Shuichi*; Hozumi, Hideaki*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Kaga, Toshiteru*; Teraoka, Yuden; Takakuwa, Yuji*

Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.67 - 70, 2011/01

The oxidation-enhanced Ge atoms condensation kinetics on an Si$$_{1-x}$$Ge$$_{x}$$ alloy layer has been investigated by the real-time photoemission spectroscopy using the synchrotron radiation. The Si$$_{1-x}$$Ge$$_{x}$$ alloy layer was formed with a thermal evaporation method on a p-type Si(001) surface, and this alloy layer was oxidized at Langmuir-type adsorption. During oxidation at 773 KC, it is found that the Ge atoms are not oxidized, only SiO$$_{2}$$ film is formed on the Si$$_{1-x}$$Ge$$_{x}$$ alloy layer. Furthermore, the desorption of GeO molecules does not occur during the oxidation of alloy layer. On the other hand, not only Si atoms but also Ge atoms are oxidized at room temperature. This difference can be explained using the unified oxidation model mediated by the point defect generation, namely it is suggested that a lot of vacancies are generated during oxidation of the Si$$_{1-x}$$Ge$$_{x}$$ alloy layer at 773K and Ge atoms diffuse through these vacancies.

Oral presentation

Formation of graphene on diamond C(111) surfaces by vacuum annealing

Ogawa, Shuichi*; Yamada, Takatoshi*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Kaga, Toshiteru*; Hozumi, Hideaki*; Hasegawa, Masataka*; Teraoka, Yuden; Takakuwa, Yuji*

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