JOPSS - Search Results

Search Results: Records 1-5 displayed on this page of 5

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Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 14, 2007/02

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2006-042.pdf

no abstracts in English

Journal Articles

Si substrate suitable for radiation-resistant space solar cells

Matsuura, Hideharu*; Iwata, Hiroshi*; Kagamihara, So*; Ishihara, Ryohei*; Yoneda, Masahiko*; Imai, Hideaki*; Kikuta, Masanori*; Inoue, Yuki*; Hisamatsu, Tadashi*; Kawakita, Shiro*; et al.

Japanese Journal of Applied Physics, Part 1, 45(4A), p.2648 - 2655, 2006/04

https://doi.org/10.1143/JJAP.45.2648

Times Cited Count：15 Percentile：48.56(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

https://doi.org/10.1016/j.physb.2005.12.088

Times Cited Count：8 Percentile：37.51(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

https://doi.org/10.1016/j.mee.2005.10.015

Times Cited Count：3 Percentile：24.15(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Elucidation of mechanism of the decrease in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

no journal, ,

no abstracts in English