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Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 14, 2007/02

no abstracts in English

Journal Articles

Si substrate suitable for radiation-resistant space solar cells

Matsuura, Hideharu*; Iwata, Hiroshi*; Kagamihara, So*; Ishihara, Ryohei*; Yoneda, Masahiko*; Imai, Hideaki*; Kikuta, Masanori*; Inoue, Yuki*; Hisamatsu, Tadashi*; Kawakita, Shiro*; et al.

Japanese Journal of Applied Physics, Part 1, 45(4A), p.2648 - 2655, 2006/04

 Times Cited Count:15 Percentile:48.15(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04

 Times Cited Count:8 Percentile:59.35(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

 Times Cited Count:3 Percentile:74.28(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Elucidation of mechanism of the decrease in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

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