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Nakazato, Tomoharu*; Furukawa, Yusuke*; Tanaka, Momoko; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi*; Nagashima, Keisuke; Kimura, Toyoaki*; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of Crystal Growth, 311(3), p.875 - 877, 2009/01
Times Cited Count：24 Percentile：86.17(Crystallography)The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double exponential decay reveal that the measured emission decay at 105 K was 
= 0.88 ns and 
= 2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations.
Tanaka, Momoko; Furukawa, Yusuke*; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Murakami, Hidetoshi*; Shimizu, Toshihiko*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Kawachi, Tetsuya; Kagamitani, Yuji*; et al.
X-Ray Lasers 2008; Springer Proceedings in Physics, Vol.130, p.501 - 505, 2009/00
We measured the time-resolved fluorescence spectra of ZnO and GaN single crystals excited by an X-ray laser operating at 13.9 nm and evaluated their scintillation properties for EUV excitation as compared with UV excitation case. For ZnO, a clear fluorescence peak of excitonic origin was observed at around 380 nm and the decay lifetime of less than 3 ns is found to be almost similar to the UV excitation case. The fluorescence at 380 nm is ideal for scintillator device design in the EUV and further applications. For GaN, the lifetimes are much longer than ZnO and the temporal profile of the EUV-excited fluorescence differs with the UV excitation case. As such, the EUV scintillation properties of ZnO is said to be more favorable than GaN. Finally, it is also demonstrated that an X-ray laser is an excellent tool for spectroscopic characterization of materials intended for next-generation lithography applications.
Furukawa, Yusuke*; Tanaka, Momoko; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nishimura, Hiroaki*; Mima, Kunioki*; Kagamitani, Yuji*; et al.
Reza Kenkyu, 36(APLS), p.1028 - 1030, 2008/12
Optical technologies in extreme ultraviolet (EUV) region have been receiving strong interests for the next generation lithography. Here we report properties of ZnO as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The ZnO sample was irradiated with EUV laser pulses and the fluorescence was measured using a streak camera fitted with a spectrograph. A clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging.
Furukawa, Yusuke*; Tanaka, Momoko; Nakazato, Tomoharu*; Tatsumi, Toshihiro*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Murakami, Hidetoshi*; Saito, Shigeki*; et al.
Journal of the Optical Society of America B, 25(7), p.B118 - B121, 2008/07
Times Cited Count：24 Percentile：72.65(Optics)Using EUV laser operated at 13.9 nm ZnO and GaN are shown to be excellent scintillators in this wavelength region. Especially ZnO has short response time of 3 ns and prominent peak fluorescence from excitation at 380 nm.
Tanaka, Momoko; Furukawa, Hiroyuki*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kagamitani, Yuji*; Ehrentraut, D.*; et al.
Journal of Physics; Conference Series, 112(4), p.042058_1 - 042058_4, 2008/00
Times Cited Count：1 Percentile：55.21(Physics, Fluids & Plasmas)Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Efficient and fast scintillators are one of the key devices functioning in the EUV region. In this paper, we report excellent properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses, and the fluorescence spectrum and the fluorescence lifetime were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.
Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kimura, Toyoaki; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; et al.
Applied Physics Letters, 91(23), p.231117_1 - 231117_3, 2007/12
Times Cited Count：52 Percentile：84.56(Physics, Applied)The scintillation properties of a hydrothermal method grown zinc oxide (ZnO) crystal are evaluated for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength. The exciton emission lifetime at around 380 nm is determined to be 1.1 ns, almost identical to ultraviolet laser excitation cases. This fast response time is sufficiently short for characterizing EUV lithography light sources having a few nanoseconds duration. The availability of large size ZnO crystal up to 3-inch is quite attractive for future lithography and imaging applications.
Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Zinc oxide (ZnO) has previously been reported to be a potential light-emitting diode materia. We measured the time-resolved emission spectrum of a ZnO crystal for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength and compared with UV excitation case. The emission lifetime was determined to be 2.6 ns. This value was not changed even for ultraviolet laser excitation. In the context of the nanosecond regime in the EUV region, ZnO crystal promises to be a feasible scintillation material.
Sarukura, Nobuhiko*; Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.
no journal, ,
Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Here we report properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses and the fluorescence were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns, as shown in Fig. 1. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.
Nakazato, Tomoharu*; Shimizu, Toshihiko*; Yamanoi, Kohei*; Takatori, Satoru*; Estacio, E.*; Cadatal, M.*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; et al.
no journal, ,
We have observed the single shot, focused image of a EUV laser through the emission of a ZnO scintillator. An estimated EUV laser focal spot size of 50
88 micrometer is reasonable considering the long focal length of the spherical mirror. This work reports a feasible method to perform single-shot beam diagnostics for EUV laser sources using a ZnO crystal scintillator. Furthermore, since the ZnO fluorescence is at 380 nm wavelength, the imaging optics for the diagnostics can all be placed outside the vacuum chamber; thereby making experiments less cumbersome. Having a capability in fast and efficient beam profiling of EUV laser sources with acceptable resolving power is very important in future lithography applications.
