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Journal Articles

Fabrication of microstructures embedded in SC-CVD diamond with a focused proton microbeam

Kada, Wataru*; Kambayashi, Yuya*; Miura, Kenta*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hanaizumi, Osamu*

Key Engineering Materials, 643, p.15 - 19, 2015/05

Journal Articles

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

 Times Cited Count:4 Percentile:32.74(Instruments & Instrumentation)

Oral presentation

Detection of high energy charged particles by diamond schottky barrier diode

Onoda, Shinobu; Kambayashi, Yuya; Kada, Wataru*; Iwamoto, Naoya*; Makino, Takahiro; Umezawa, Hitoshi*; Mokuno, Yoshiaki*; Shikata, Shinichi*; Hanaizumi, Osamu*; Kamiya, Tomihiro; et al.

no journal, , 

no abstracts in English

Oral presentation

Development of fabrication technique for embedded-microstructures in single crystal CVD diamond by proton beam writing

Kambayashi, Yuya*; Kada, Wataru*; Saruya, Ryota*; Kubota, Atsushi*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Kamiya, Tomihiro; Miura, Kenta*; Hanaizumi, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Investigation of deep levels in diamond based radiation detector by transient charge spectroscopy with focused heavy ion microbeam

Ando, Yushi*; Kambayashi, Yuya*; Kada, Wataru*; Onoda, Shinobu; Makino, Takahiro; Sato, Shinichiro; Umezawa, Hitoshi*; Mokuno, Yoshiaki*; Shikata, Shinichi*; Hanaizumi, Osamu*; et al.

no journal, , 

A transient spectroscopy analysis of pulse signals induced by heavy ion micro probe was applied for chemical vapor deposition (CVD) diamond-based radiation detector to investigate the effects of native defects in on the degradation of charge collection efficiency. A high-purity CVD diamond with thickness of 100 $$mu$$m was employed for the analysis, and as a result, a defect with activation energy of 0.27 eV which is involved in the degradation of CCE was detected.

Oral presentation

Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

no journal, , 

no abstracts in English

Oral presentation

Investigation of deep levels in silicon carbide using ion-induced charge transient spectroscopy

Kada, Wataru*; Onoda, Shinobu; Iwamoto, Naoya*; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Makino, Takahiro; Kambayashi, Yuya; Koka, Masashi; Hanaizumi, Osamu*; Kamiya, Tomihiro; et al.

no journal, , 

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