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Watanabe, So; Ogi, Hiromichi*; Arai, Yoichi; Aihara, Haruka; Takahatake, Yoko; Shibata, Atsuhiro; Nomura, Kazunori; Kamiya, Yuichi*; Asanuma, Noriko*; Matsuura, Haruaki*; et al.
Progress in Nuclear Energy, 117, p.103090_1 - 103090_8, 2019/11
Times Cited Count：12 Percentile：77.44(Nuclear Science & Technology)Park, S.-W.*; Mizoguchi, Hiroshi*; Kodama, Katsuaki; Shamoto, Shinichi; Otomo, Toshiya*; Matsuishi, Satoru*; Kamiya, Toshio*; Hosono, Hideo*
Inorganic Chemistry, 52(23), p.13363 - 13368, 2013/12
Times Cited Count：33 Percentile：82.03(Chemistry, Inorganic & Nuclear)Hirao, Toshio; Onoda, Shinobu; Oikawa, Masakazu*; Sato, Takahiro; Kamiya, Tomihiro; Oshima, Takeshi
Nuclear Instruments and Methods in Physics Research B, 267(12-13), p.2216 - 2218, 2009/06
Times Cited Count：11 Percentile：59.85(Instruments & Instrumentation)Single-Event Effects (SEEs) are triggered when an energetic heavy ion traverses a sensitive area in electric devices. Since the SEEs occur due to dense charge which is created along to ion track within the order of picoseconds, the measurement of such a high speed current signals is very important. Furthermore, the size of dense charge and their concentration depend on LET as well as energy of incident ions. This means that the transient currents induced in electronic devices by incidence of ions with various energies and LETs should be investigated to clarify the mechanism of SEEs for electronic devices. Especially, the evaluations using heavy ions with high energies more than a several hundred MeVs are very important to understand the mechanism of SEEs observed in space. For this aim, we have developed an irradiation system of focused heavy ion microbeams at a several hundreds of MeVs at JAEA. In this paper, we study transient currents induced in Si photodiodes using the focused heavy ion microbeam irradiation system. The mapping of charge collected from the photodiodes irradiated with 260 MeV 
Ne
ion microbeams, which is firstly observed in the world, will be presented. In addition, the difference in transient currents induced by ions at several hundred MeVs from ions at tens MeVs is discussed using TCAD (Technology Computer Aided Design) and GUN theorem.
Yanagi, Hiroshi*; Watanabe, Takumi*; Kodama, Katsuaki; Iikubo, Satoshi*; Shamoto, Shinichi; Kamiya, Toshio*; Hirano, Masahiro*; Hosono, Hideo*
Journal of Applied Physics, 105(9), p.093916_1 - 093916_8, 2009/05
Times Cited Count：47 Percentile：83.35(Physics, Applied)Electronic and magnetic properties of a layered compound LaMnPO are examined in relation to a newly discovered iso-structural superconductor LaFeAs(P)O. Neutron diffraction measurements, together with temperature dependent magnetic susceptibility, clarify that LaMnPO is an antiferromagnet at least up to 375 K. The spin moment of a Mn ion is determined to be 2.26 
at room temperature, and the spin configuration is antiparallel in the Mn-P plane and parallel to between the Mn-P planes, which is rather different from that of LaFeAsO. Optical absorption spectra, photoemission spectra, and temperature dependent electrical conductivity indicate that LaMnPO is a semiconductor. Furthermore, nominally undoped LaMnPO exhibits 
-type conduction while the conduction type is changed by doping of Cu or Ca to the La sites, indicating that LaMnPO is a bipolar conductor. Density functional calculation using the GGA+U approximation supports the above conclusions; the electronic band structure has an open band gap and the antiferromagnetic spin configuration is more stable than the ferromagnetic one.
p diodes by Ni ion incidenceOshima, Takeshi; Onoda, Shinobu; Oikawa, Masakazu*; Sato, Takahiro; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi
JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 13, 2007/02
no abstracts in English
p diodes irradiated with gold ionsOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; Tanaka, Reisaburo*; et al.
Materials Science Forum, 556-557, p.913 - 916, 2007/00
Times Cited Count：4 Percentile：76.81(Materials Science, Ceramics)no abstracts in English
p diodes irradiated with Au-ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10
no abstracts in English
p diodes using transient ion beam-induced currentOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04
Times Cited Count：9 Percentile：55.97(Instruments & Instrumentation)In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro
Nuclear Instruments and Methods in Physics Research B, 231(1-4), p.497 - 501, 2005/04
Times Cited Count：3 Percentile：30.27(Instruments & Instrumentation)no abstracts in English
Fukui, Hironobu*; Hamaguchi, Masafumi*; Yoshimura, Hisao*; Oyamatsu, Hisato*; Matsuoka, Fumitomo*; Noguchi, Tatsuo*; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Yamakawa, Takeshi; et al.
Proceedings of 2005 Symposia on VLSI Technology and Circuits, p.222 - 223, 2005/00
no abstracts in English
Yamakawa, Takeshi; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Wakasa, Takeshi; Shibata, Toshihiko*; Kamiya, Tomihiro
JAERI-Review 2004-025, TIARA Annual Report 2003, p.19 - 20, 2004/11
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Oyama, Hidenori*; Kamiya, Tomihiro
JAERI-Review 2004-025, TIARA Annual Report 2003, p.14 - 16, 2004/11
no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10
no abstracts in English
Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Kamiya, Tomihiro; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.125 - 129, 2004/10
no abstracts in English
m CMOS LSIsFukui, Hironobu*; Hamaguchi, Masafumi*; Yoshimura, Hisao*; Oyamatsu, Hisato*; Matsuoka, Fumitomo*; Noguchi, Tatsuo*; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Yamakawa, Takeshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.169 - 172, 2004/10
no abstracts in English
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Wakasa, Takeshi; Yamakawa, Takeshi; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.173 - 176, 2004/10
no abstracts in English
Wakasa, Takeshi; Hirao, Toshio; Sanami, Toshiya*; Onoda, Shinobu; Abe, Hiroshi; Tanaka, Susumu; Kamiya, Tomihiro; Okamoto, Tsuyoshi*; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.213 - 216, 2004/10
no abstracts in English
Oyama, Hidenori*; Takakura, Kenichiro*; Nakabayashi, Masakazu*; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro; Simoen, E.*; Claeys, C.*; Kuboyama, Satoshi*; Oka, Katsumi*; et al.
Nuclear Instruments and Methods in Physics Research B, 219-220, p.718 - 721, 2004/06
Times Cited Count：3 Percentile：24.89(Instruments & Instrumentation)no abstracts in English
