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Takami, Kazusa*; Gomi, Yuibi*; Yasuda, Ryuichi*; Abe, Shinichiro; Ito, Masatoshi*; Kanda, Hiroki*; Fukuda, Mitsuhiro*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 72(8), p.2622 - 2628, 2025/08
Times Cited Count：1 Percentile：89.74Neutron-induced soft errors in the terrestrial environment pose reliability issues for semiconductor devices. We have developed the new method for estimating terrestrial SER based on simulation coupled with one-time irradiation using a conventional neutron source. This method has been validated using 65-nm planar SRAMs. However, with the ongoing progression of process shrinkage and the increasing adoption of devices fabricated with newer processes, there is a growing demand for further experimental validation of the terrestrial SER estimation method for these advanced processes. In this work, we validated the estimation method for 12-nm 1-fin FinFETs and 28-nm planer SRAMs. The SERs estimated by our method were consistent with the SERs measured using a white neutron beam at RCNP within 28% error.
Sakaguchi, Hiroki*; Hatakeyama, Keisuke*; Satake, Yuichi*; Fujine, Shigenori*; Yoneda, Kenji*; Kanda, Keiji*; Matsubayashi, Masahito; Esaka, Takao*
Kashika Joho Gakkai-Shi, 20(suppl.1), p.373 - 374, 2000/07
no abstracts in English
Ota, Yosei*; Kanda, Yuna*; Hisamochi, Rikuya*; Yada, Hiroki; Furuya, Masahiro*
no journal, ,
Satoh, Daiki; Abe, Shinichiro; Kanda, Hiroki*; Nagayama, Keiichi*; Fukuda, Mitsuhiro*; Yorita, Tetsuhiko*; Zhao, H.*; Matsui, Shotaro*; Kobayashi, Nobuyuki*
no journal, ,
The Research Center for Nuclear Physics (RCNP) at Osaka University is planning to increase the intensity of the high-energy white neutron field that can be used to analyze semiconductor soft errors caused by cosmic ray-derived neutrons. Using the PHITS code, we had designed and installed a neutron-producing target, beam dumps, collimators, etc., applicable to the 392 MeV proton beam with 10 times higher intensity (about 10
A) than the current one. In this study, the accuracy of the PHITS simulations was confirmed based on the data measured at the real facility. The simulation geometry was constructed according to the drawings of the facility. The INCL model and JENDL-5 were used for the radiation transport simulations. Neutron and gamma-ray dose rates were measured at several locations using the Wendi-2 and DARWIN monitors. As a result, PHITS well reproduced the neutron fluence rates at the semiconductor irradiation location, and the simulated values agreed with the measured neutron and gamma-ray dose rates within 5 and 15%, respectively, behind the shielding.
