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Journal Articles

Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography

Takei, Satoshi*; Oshima, Akihiro*; Oyama, Tomoko; Ito, Kenta*; Sugahara, Kigen*; Kashiwakura, Miki*; Kozawa, Takahiro*; Tagawa, Seiichi*; Hanabata, Makoto*

Japanese Journal of Applied Physics, 53(11), p.116505_1 - 116505_7, 2014/11

 Times Cited Count:10 Percentile:41.38(Physics, Applied)

The application of natural linear polysaccharide to green resists was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography. Because of the water solubility of natural polysaccharides, the water spin-coating and water-developable processes realize an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups was found to have acceptable properties such as spin-coat ability on 200 mm wafers, pillar patterns of 100-400 nm with a high EB sensitivity of 10 $$mu$$ C/cm$$^{2}$$, etch selectivity with a silicon-based middle layer in CF$$_{4}$$ plasma treatment, and high prediction sensitivity to EUV region.

Journal Articles

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography

Takei, Satoshi*; Oshima, Akihiro*; Ichikawa, Takumi*; Sekiguchi, Atsushi*; Kashiwakura, Miki*; Kozawa, Takahiro*; Tagawa, Seiichi*; Oyama, Tomoko; Ito, Shoji*; Miyasaka, Hiroshi*

Microelectronic Engineering, 122, p.70 - 76, 2014/06

 Times Cited Count:24 Percentile:76.82(Engineering, Electrical & Electronic)

Biomass-derived branched sugar resist material was developed for environmentally-friendly electron beam lithography (EBL). The developed resist enables organic solvent-free water-developable process. The resist performance was evaluated using 75 keV EBL system. Lines of 50-200 nm were fabricated with high sensitivity of 7 $$mu$$C/cm$$^{2}$$. The resist is developable in pure water at 23 $$^{circ}$$C for 60 s, and it has acceptable CF$$_{4}$$ etch selectivity.

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