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Journal Articles

Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

Onoda, Shinobu; Makino, Takahiro; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 59(4), p.742 - 748, 2012/08

https://doi.org/10.1109/TNS.2012.2195199
 Times Cited Count：4 Percentile：28.65(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Transient response of charge collection by single ion strike in 4H-SiC MESFETs

Onoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 56(6), p.3218 - 3222, 2009/12

https://doi.org/10.1109/TNS.2009.2032395
 Times Cited Count：19 Percentile：73.52(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

$$gamma$$-ray irradiation effects on the I-V characteristics of 4H-SiC MESFET

Onoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi

no journal, , 

no abstracts in English

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