Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*

Applied Physics Letters, 83(2), p.275 - 277, 2003/07

https://doi.org/10.1063/1.1592000

We observed an intermediate structure during the re-crystallization process from the amorphous state of BiTiO prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore BiTiO phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of BiO, some are inserted between the pseudo-perovskite layers of BiTiO, and a non-stoichiometric BiWO-like structure is stabilized.