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Inogamov, N. A.*; Zhakhovsky, V. V.*; Hasegawa, Noboru; Nishikino, Masaharu; Yamagiwa, Mitsuru; Ishino, Masahiko; Agranat, M. B.*; Ashitkov, S. I.*; Faenov, A. Y.*; Khokhlov, V. A.*; et al.
Applied Physics B, 119(3), p.413 - 419, 2015/06
Times Cited Count:6 Percentile:34.07(Optics)Inogamov, N. A.*; Anisimov, S. I.*; Petrov, Y. V.*; Khokhlov, V. A.*; Zhakhovskii, V. V.*; Faenov, A. Ya.*; Pikuz, T.; Fortov, V. E.*; Skobelev, I. Y.*; Kato, Yoshiaki*; et al.
Journal of Optical Technology, 78(8), p.473 - 480, 2011/08
Times Cited Count:6 Percentile:32.77(Optics)Inogamov, N. A.*; Faenov, A. Ya.*; Zhakhovsky, V. V.*; Pikuz, T. A.*; Skobelev, I. Yu.*; Petrov, Y. V.*; Khokhlov, V. A.*; Shepelev, V. V.*; Anisimov, S. I.*; Fortov, V. E.*; et al.
Contributions to Plasma Physics, 51(5), p.419 - 426, 2011/06
Times Cited Count:20 Percentile:63.86(Physics, Fluids & Plasmas)Warm dense matter, arising under the action of ultrashort EUV-FEL pulse onto LiF dielectric crystal, is characterized by high temperature of conduction electrons, with their number density achieving values of the order of atom number density at maximum laser fluences in our experiments. Expansion of matter, heated and pressurized through the electron-ion energy exchange, gives rise to the spallative ablation at small fluences and gaseous outflow from a target in the case of large fluences. Ablation threshold is low in comparison with a longer nanosecond XRL.
Inogamov, N. A.*; Zhakhovsky, V. V.*; Faenov, A. Ya.*; Khokhlov, V. A.*; Shepelev, V. V.*; Skobelev, I. Y.*; Kato, Yoshiaki*; Tanaka, Momoko; Pikuz, T. A.*; Kishimoto, Maki; et al.
Applied Physics A, 101(1), p.87 - 96, 2010/10
Times Cited Count:34 Percentile:76.41(Materials Science, Multidisciplinary)Inogamov, N. A.*; Faenov, A. Ya.*; Zhakhovskii, V. V.*; Skobelev, I. Y.*; Khokhlov, V. A.*; Kato, Yoshiaki*; Tanaka, Momoko; Pikuz, T. A.*; Kishimoto, Maki; Ishino, Masahiko; et al.
Contributions to Plasma Physics, 51(4), p.361 - 366, 2010/05
Times Cited Count:19 Percentile:62.10(Physics, Fluids & Plasmas)Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V. V.*; Khokhlov, V. A.*; Nishihara, Katsunobu*; Kato, Yoshiaki*; Tanaka, Momoko; Pikuz, T. A.*; Kishimoto, Maki; Ishino, Masahiko; et al.
Applied Physics Letters, 94(23), p.231107_1 - 231107_3, 2009/06
Times Cited Count:44 Percentile:81.91(Physics, Applied)Kawachi, Tetsuya; Faenov, A.*; Ishino, Masahiko; Tanaka, Momoko; Inogamov, N. A.*; Khokhlov, V.*; Anisimov, S. I.*; Pikuz, T.*; Hasegawa, Noboru; Nishikino, Masaharu; et al.
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We have observed low ablation threshold of substances illuminated by EUV laser pulse. The ablation threshold was lower by 2-3 orders of magnitude compared with the cases by use of visible or infrared laser pulse. In order to explain the present result, we have performed the computer simulation involving molecular dynamics and hydro-dynamics. The calculated results implied that in the case of EUV laser ablation, high temperature and high pressure region could be generated in localized area, and following strong tenssile stress induced spallative distruction of the substances. This mechanism is completely different from the ablation process induced by visible or infrared laser illumination.
Kawachi, Tetsuya; Faenov, A.*; Tanaka, Momoko; Ishino, Masahiko; Pikuz, T.*; Hasegawa, Noboru; Bulanov, S. V.; Inogamov, N. A.*; Khokhlov, V.*; Anisimov, S. I.*
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We have observed ablation threshold of materials irradiated by pico-second EUV laser pulse. The obtained ablation threshold was lower by 2-3 orders of magnitude than the cases irradiated by visible or infrared laser pulse. In order to explain the present result, we have performed computer simulation involving molecure-dynamics and hydro-dynamics. The results shows that in the case of EUV laser irradiation, high temperature and high pressure region is generated in the localized area of the materials and following generation of the strong tenssile induces spallative destruction of the material. This mechanism is completely different from the case by use of visible or infrared laser pulse.
Faenov, A. Y.; Pikuz, T.*; Inogamov, N. A.*; Zhakhovski, V.*; Skobelev, I.*; Khokhlov, V.*; Anisimov, S. I.*; Fortov, V. E.*; Fukuda, Yuji; Kato, Yoshiaki*; et al.
no journal, ,
Faenov, A. Y.; Pikuz, T. A.*; Inogamov, N. A.*; Zhakhovski, V.*; Khokhlov, V.*; Anisimov, S. I.*; Fortov, V. E.*; Kato, Yoshiaki*; Fukuda, Yuji; Tanaka, Momoko; et al.
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Inogamov, N. A.*; Zhakhovsky, V. V.*; Ashitkov, S.*; Eminov, Yu.*; Faenov, A.*; Petrov, Y. V.*; Khokhlov, V.*; Ishino, Masahiko; Demaske, B.*; Tanaka, Momoko; et al.
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Ishino, Masahiko; Faenov, A. Y.*; Tanaka, Momoko; Tamotsu, Satoshi*; Kawachi, Tetsuya; Inogamov, N. A.*; Pikuz, T. A.*; Oba, Toshiyuki; Kaihori, Takeshi; Khokhlov, V.*; et al.
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no abstracts in English
Inogamov, N. A.*; Faenov, A. Y.; Pikuz, T.*; Zhakhovski, V.*; Skobelev, I.*; Khokhlov, V.*; Anisimov, S. I.*; Fortov, V. E.*; Fukuda, Yuji; Kato, Yoshiaki*; et al.
no journal, ,
Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V.*; Khokhlov, V. A.*; Nishihara, Katsunobu*; Kato, Yoshiaki*; Tanaka, Momoko; Pikuz, T.*; Kishimoto, Maki; Ishino, Masahiko; et al.
no journal, ,