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Journal Articles

Growth of $$beta$$-FeSi$$_2$$ thin films on $$beta$$-FeSi$$_2$$ (110) substrates by molecular beam epitaxy

Muroga, Masataka*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Zhuravlev, A. V.; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Terai, Takayuki*

Thin Solid Films, 515(22), p.8197 - 8200, 2007/08

https://doi.org/10.1016/j.tsf.2007.02.040
 Times Cited Count：6 Percentile：31.25(Materials Science, Multidisciplinary)

Semiconducting ${it $beta$}$-FeSi$$_2$$ has received much attention as a material for Si-based optoelectronic devices. There are a number of studies on heteroepitaxy of ${it $beta$}$-FeSi$$_2$$ film on Si. However, growth experiments of ${it $beta$}$-FeSi$$_2$$ film on single crystalline ${it $beta$}$-FeSi$$_2$$ substrate have not been investigated yet. Recently, single crystalline ${it $beta$}$-FeSi$$_2$$ with large growth facets by solution growth method using Ga solvent. By obtaining a smooth surface on the substrate, we have succeeded in growing ${it $beta$}$-FeSi$$_2$$ film on ${it $beta$}$-FeSi$$_2$$(110) substrate using molecular-beam epitaxy.

Journal Articles

Single crystalline $$beta$$-FeSi$$_{2}$$ grown using high-purity FeSi$$_{2}$$ source

Goto, Kohei*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Esaka, Fumitaka; Uchikoshi, Masahito*; Isshiki, Minoru*

Thin Solid Films, 515(22), p.8263 - 8267, 2007/08

https://doi.org/10.1016/j.tsf.2007.02.066
 Times Cited Count：15 Percentile：55.86(Materials Science, Multidisciplinary)

We have investigated the effect of FeSi$$_{2}$$ source purity on the electrical property of $$beta$$-FeSi$$_{2}$$ grown from solution. A high purity FeSi$$_{2}$$ source avoided a contamination of Cu and W metals was synthesized by melting a high purity Fe (5N) and Si (5N-up) in a quartz ampoule. The $$beta$$-FeSi$$_{2}$$ crystals grown using the high purity FeSi$$_{2}$$ and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi$$_{2}$$ showed p-type. From the SIMS analysis of the grown crystals, we found that dominant impurity concentrations in the p-type crystals were higher than those in the n-type ones.

Oral presentation

Solution growth of $$beta$$-FeSi$$_{2}$$ single crystal using a high purity FeSi$$_{2}$$ source, 2

Goto, Kohei*; Udono, Haruhiko*; Kikuma, Isao*; Esaka, Fumitaka; Uchikoshi, Masahito*; Isshiki, Minoru*

no journal, , 

no abstracts in English

Oral presentation

Thermal preannealing of single crystalline $$beta$$-FeSi$$_{2}$$ substrate for MBE

Ouchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*

no journal, , 

Thermal preannealing of single crystalline $$beta$$-FeSi$$_{2}$$ substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of $$beta$$-FeSi$$_{2}$$ film.

Oral presentation

RHEED observation of surface on $$beta$$-FeSi$$_{2}$$ single crystals

Wakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*

no journal, , 

RHEED observation of surface has been performed on $$beta$$-FeSi$$_{2}$$ single crystals.

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