JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-4 displayed on this page of 4
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Detection and temporal variation of $$^{60}$$Co in the digestive glands of the common octopus, ${it Octopus vulgaris}$, in the East China Sea

Morita, Takami*; Otosaka, Shigeyoshi; Fujimoto, Ken*; Nishiuchi, Ko*; Kimoto, Katsunori*; Yamada, Haruya*; Kasai, Hiromi*; Minakawa, Masayuki*; Yoshida, Katsuhiko*

Marine Pollution Bulletin, 60(8), p.1193 - 1199, 2010/08

https://doi.org/10.1016/j.marpolbul.2010.03.031
 Times Cited Count：3 Percentile：10.2(Environmental Sciences)

Significant concentrations of $$^{60}$$Co, $$^{137}$$Cs and $$^{108m}$$Ag were detected in common octopus specimens collected in the East China Sea during two periods, 1986-1989 and 1996-2005. The radionuclides detected in the former period were thought to originate from the global fallout. On the other hand, the source of $$^{60}$$Co in the latter period has remained unclear because the $$^{60}$$Co concentration decreased continuously with shorter half-lives than the physical half-lives. This tendency suggests that the source of $$^{60}$$Co in 1996-2005 was identical and was temporary supplied to the East China Sea. Investigations of common octopus in the other area indicated that the origin of the pollutant source of $$^{60}$$Co in 1996-2005 occurred locally in the restricted area in the East China Sea rather than in the coastal area of Japan.

Journal Articles

Thermal stability of defects centers in n- and p-type 4H-SiC epilayers generated by irradiation with high-energy electrons

Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.423 - 426, 2010/00

n- and p-type 4H-SiC epilayers were irradiated with electrons at 170 keV or 1 MeV. Subsequent annealing (in Ar, 30 min) up to 1700 $$^{circ}$$C was carried out. Defects in the samples were investigated using DLTS (Deep Level Transient Spectroscopy). As a results, for n-type, dominant defects were Z1/Z2 and EH7, and they can observed for both 170 keV- and 1 MeV-irradiated samples. Both defects decreased with increasing temperature up to 1100 $$^{circ}$$C, although they appeared again at 1400 $$^{circ}$$C. Then they disappeared at 1600 $$^{circ}$$C. For p-type, defects named UK1 and HK2 were observed and they were very stable. No significant decrease was observed after 1700 $$^{circ}$$C annealing.

Journal Articles

Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 KeV or 1 MeV electrons

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; et al.

Materials Science Forum, 645-648, p.419 - 422, 2010/00

Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25$$^{circ}$$C to 1700$$^{circ}$$C in 100$$^{circ}$$C steps. As a result of LTPL measurements, L$$_{1}$$ line was observed after irradiation. In previous studies, L$$_{1}$$ line is thought to correlate with Z$$_{1}$$/Z$$_{2}$$ centers in DLTS measurements. However, in this study, no correlation between L$$_{1}$$ and Z$$_{1}$$1/Z$$_{2}$$ was observed.

Journal Articles

Shallow defects observed in as-grown and electron-irradiated or He$$^{+}$$-implnated Al-doped 4H-SiC epilayers

Beljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.427 - 430, 2010/00

Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.5$$times$$10$$^{-16}$$/cm$$^{2}$$ which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800 $$^{circ}$$C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.

4 (Records 1-4 displayed on this page)
  • 1