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Hosoi, Takuji*; Osako, Momoe*; Moges, K.*; Ito, Koji*; Kimoto, Tsunenobu*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka; Shimura, Takayoshi*; Watanabe, Heiji*
Applied Physics Express, 15(6), p.061003_1 - 061003_5, 2022/06
Times Cited Count:6 Percentile:47.88(Physics, Applied)The combination of NO annealing and subsequent post-nitridation annealing (PNA) in CO ambient for SiO
/SiC structures has been demonstrated to be effective in obtaining both high channel mobility and superior threshold voltage stability in SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs). N atoms on the SiO
side of the SiO
/SiC interface incorporated by NO annealing, which are plausible cause of charge trapping sites, could be selectively removed by CO
-PNA at 1300
C without oxidizing the SiC. CO
-PNA was also effective in compensating oxygen vacancies in SiO
, resulting high immunity against both positive and negative bias-temperature stresses.
Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; Kawahara, Kotaro*; Kimoto, Tsunenobu*; Oshima, Takeshi
Materials Science Forum, 778-780, p.273 - 276, 2014/02
Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; Hamilton, B.*; et al.
Applied Physics Letters, 102(3), p.032104_1 - 032104_4, 2013/01
Times Cited Count:11 Percentile:42.86(Physics, Applied)Son, N. T.*; Trinh, X. T.*; Lvile, L. S.*; Svensson, B. G.*; Kawahara, Kotaro*; Suda, Jun*; Kimoto, Tsunenobu*; Umeda, Takahide*; Isoya, Junichi*; Makino, Takahiro; et al.
Physical Review Letters, 109(18), p.187603_1 - 187603_5, 2012/11
Times Cited Count:222 Percentile:98.12(Physics, Multidisciplinary)Devaty, R. P.*; Yan, F.*; Choyke, W. J.*; Gali, A.*; Kimoto, Tsunenobu*; Oshima, Takeshi
Materials Science Forum, 717-720, p.263 - 266, 2012/05
Times Cited Count:1 Percentile:52.89(Materials Science, Multidisciplinary)Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Gali, A.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*
Applied Physics Letters, 100(13), p.132107_1 - 132107_3, 2012/03
Times Cited Count:4 Percentile:17.62(Physics, Applied)Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.
Materials Science Forum, 645-648, p.423 - 426, 2010/00
n- and p-type 4H-SiC epilayers were irradiated with electrons at 170 keV or 1 MeV. Subsequent annealing (in Ar, 30 min) up to 1700 C was carried out. Defects in the samples were investigated using DLTS (Deep Level Transient Spectroscopy). As a results, for n-type, dominant defects were Z1/Z2 and EH7, and they can observed for both 170 keV- and 1 MeV-irradiated samples. Both defects decreased with increasing temperature up to 1100
C, although they appeared again at 1400
C. Then they disappeared at 1600
C. For p-type, defects named UK1 and HK2 were observed and they were very stable. No significant decrease was observed after 1700
C annealing.
Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Kimoto, Tsunenobu*; Oshima, Takeshi; Pensl, G.*; Gali, A.*
Materials Science Forum, 645-648, p.411 - 414, 2010/00
Silicon Carbide (SiC) samples were irradiated with electron, proton and He ions and defects in the irradiated SiC were investigated by Low Temperature Photo Luminescence (LTPL). After irradiation, PL spectra between 2.48 and 2.62 eV were measured at 7 K. As a results, several PL lines were observed. These lines showed the same annealing behavior and were annealed out between 1300 and 1400
C. Therefore, it is concluded that these line have the same origin. In addition, as a result of simulation, the structure of the defect is determined to be di-carbon antisite.
Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; et al.
Materials Science Forum, 645-648, p.419 - 422, 2010/00
Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25C to 1700
C in 100
C steps. As a result of LTPL measurements, L
line was observed after irradiation. In previous studies, L
line is thought to correlate with Z
/Z
centers in DLTS measurements. However, in this study, no correlation between L
and Z
1/Z
was observed.
Weidner, M.*; Trapaidze, L.*; Pensl, G.*; Reshanov, S. A.*; Schner, A.*; Ito, Hisayoshi; Oshima, Takeshi; Kimoto, Tsunenobu*
Materials Science Forum, 645-648, p.439 - 442, 2010/00
Intrinsic defects in 3C-SiC generated by implantation of H and He
ions or by irradiation of high energy electrons were investigated using DLTS (Deep Level Transient Spectroscopy). The defect parameters and the thermal stability of the observed defects are determined. The dominant DLTS peak was named W6-center and its capture-cross-section was directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.
Beljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.
Materials Science Forum, 645-648, p.427 - 430, 2010/00
Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.510
/cm
which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800
C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.
Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Koike, Shumpei*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; et al.
no journal, ,
no abstracts in English
Son, N. T.*; Trinh, X. T.*; Suda, Jun*; Kimoto, Tsunenobu*; Lvile, L. S.*; Svensson, B. G.*; Szasz, K.*; Hornos, T.*; Gali, A.*; Umeda, Takahide*; et al.
no journal, ,
no abstracts in English