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Igarashi, Shinichi*; Itakura, Akiko*; Kitajima, Masahiro*; Nakano, Shinsuke*; Muto, Shunsuke*; Tanabe, Tetsuo*; Yamamoto, Hiroyuki; Hojo, Kiichi
Japanese Journal of Applied Physics, Part 1, 45(5A), p.4179 - 4182, 2006/05
Times Cited Count：3 Percentile：12.93(Physics, Applied)By utilizing surface stress to modify surface reaction potential and increase surface reactivity, a technique for the twodimensional patterning of surface chemical reactions may be realized by surface stress modulation. A blister is a local protrusion on a solid surface induced by gas ion irradiation, and is considered to create local stress on surface layers. Si(100) substrate was irradiated with H
(incident energy: 10 keV, fluence: 1
10
ions) at an angle of 30 to the surface normal. Blisters of 1-5 mm in diameter at the base were formed. After the ion irradiation, the substrate was oxidized. Scanning Auger electron microscopy revealed that, compared with the flat surface, the perimeters of the blisters had a higher oxygen intensity whereas the blister tops had a lower oxygen intensity. The stress distribution of the blister was calculated using the finite element method. It was found that the surface layers were stretched laterally at the blisters tops and compressed at theperimeters, relative to the flat surface. There was a clear correspondence between the O distribution and the stress distribution on the surface. Our results indicate that the patterned oxidation of the Si surface can be governed by the application of surface stress.
Igarashi, Shinichi*; Itakura, Akiko*; Kitajima, Masahiro*; Nakano, Shinsuke*; Muto, Shunsuke*; Tanabe, Tetsuo*; Yamamoto, Hiroyuki; Hojo, Kiichi
Hyomen Kagaku, 25(9), p.562 - 567, 2004/09
Surface stress can be utilized positively in modifying the surface reaction potential and increasing the surface reactivity. Blister is a local protrusion of solid surface induced by gas ion irradiation, and is considered to create local stress on surface layers. Si(100) substrate was irradiated with 10 keV H (fluence; 110 ions/m
) at an angle of 30
to the surface normal. The blisters of several 
m in diameter at the bottom were formed. After the ion irradiation, the substrate was oxidized. By means of scanning Auger microscopy, we observed that the rims of the blisters have higher oxygen intensities than the flat surfaces and the tops have lower than the flats. The calculated stress distribution of the blister shows that the surface layers should be stretched laterally at the top of blisters and are compressed at the rim, relative to the flat surfaces. The O distribution clearly consists with the stress distribution of the surface. Our results demonstrate a patterned oxidation of Si surface applying its reactivity depending on the surface stress.
Urisu, Tsuneo*; Kitajima, Masahiro*; Teraoka, Yuden
Oyo Butsuri, 71(1), p.114 - 115, 2002/01
no abstracts in English
Okamoto, Makoto*; Kitajima, Masahiro*; Kobayashi, Yoshinori*; Kiuchi, Kiyoshi*; Kano, Shigeki
Nihon Genshiryoku Gakkai-Shi, 37(9), p.796 - 806, 1995/00
Times Cited Count：0 Percentile：0.01(Nuclear Science & Technology)None
