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2) investigated using supersonic seeded molecular beamsOno, Shinya*; Tanaka, Kazuma*; Kodama, Hiraku*; Tanaka, Masatoshi*; Yoshigoe, Akitaka; Teraoka, Yuden*
Surface Science, 697, p.121600_1 - 121600_6, 2020/07
Times Cited Count：1 Percentile：6.04(Chemistry, Physical)The initial oxidation on silicon surfaces with (113) orientation has been investigated by high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si2p state and O1s state to evaluate the oxide thickness, composition, and to assess the strain at the SiO
/Si interface. In the Si2p state, the oxidized components (Si
, Si
, Si
, Si
) were analyzed. In the O1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized the supersonic seeded molecular beam (SSMB) to enhance the translational kinetic energies (
) of oxygen molecules. We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing .
Kodama, Hiraku*; Hiraga, Kenta*; Ono, Shinya*; Sekiguchi, Tetsuhiro; Baba, Yuji; Tanaka, Masatoshi*
no journal, ,
The electronic property of organic semiconductor depends strongly on the interfacial structure between organic molecule and the substrate. We have investigated the structure of a-sexithiophene (
-6T) molecule thin films grown on semiconductor surfaces including SiO, GaSe, and WSe, using NEXAFS spectroscopy. Using polarized X-ray, orientation structure of a-6T molecules can be precisely determined. It was found that the orientation structure depend on the substrates. -6T on GaSe is oriented with long molecular axis being flat-lying parallel to the surface. On the hand, -6T on SiO is up-right standing. The tendency of orientation direction change was interpreted in terms of the interfacial interaction between -6T molecule and the substrates.
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
-sexithiophene thin films grown on layered materialsKodama, Hiraku*; Hiraga, Kenta*; Ono, Shinya*; Sekiguchi, Tetsuhiro; Baba, Yuji; Tanaka, Masatoshi*
no journal, ,
Orientation of organic semiconductor has been important issue because of its strong anisotropy of the electronic property. We have investigated the orientation effect of -sexithiphene (6T) molecule deposited on WSe or GaSe substrate, which is layered semiconductor material. Thickness was controlled by regulating deposition rate and time. Orientation angle was analyzed by angle-resolved NEXAFS spectroscopy. The results show that molecular orientation angle depend not only on the substrate but also the thickness. Tilt angle is thought to be determined by the energy stability due to the commensurate at the interface as well as the molecule-substrate interaction.
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Abe, Sosuke*; Miura, Shu*; Narishige, Takuma*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
no journal, ,
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
no journal, ,
Deep understanding of structures and electronic states of ultra-thin oxidies grown on surfaces with high-index crystal plane is required for the use of SiO/Si with various surfaces in 3D MOSFET such as Si nanowires. In this study, real time photoelectron spectroscopy analysis on oxidation sates formed at the Si(113) surface was demonstrated by using SUREAS2000 constructed at BL23SU in SPring-8. We used supersonic molecular beams to select the translational energies of oxygen molecule and we found that Si oxidation states can be controlled by incident energies.
