Refine your search:     
Report No.
Search Results: Records 1-4 displayed on this page of 4
  • 1

Presentation/Publication Type

Initialising ...


Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...


Initialising ...


Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

Abderrahmane, A.*; Koide, Shota*; Okada, Hiroshi*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

Applied Physics Letters, 102(19), p.193510_1 - 193510_4, 2013/05

 Times Cited Count:7 Percentile:34.75(Physics, Applied)

The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain.

Journal Articles

Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

Abderrahmane, A.*; Koide, Shota*; Tahara, Tomoyuki*; Sato, Shinichiro; Oshima, Takeshi; Okada, Hiroshi*; Sandhu, A.*

Journal of Physics; Conference Series, 433, p.012011_1 - 012011_8, 2013/04

 Times Cited Count:5 Percentile:83.7

We investigated the effect of high energy and high fluence proton irradiation on magnetoelectric properties of AlGaN/GaN micro-Hall sensors from 5.4 K to room temperature. The sensors show good resistance versus the irradiation translated by the stability of the sheet density therefore the stability of the absolute sensitivity of the sensor. However, the proton irradiation damaged the electrical properties of the sensor indicated by the dramatically decrease of the mobility at low temperature by rate of about 81% at 5.4 K. The existing of the 2DEG system either after irradiation with high energy was confirmed by investigation the magnetotransport measurements at low temperature and which show Shubnikov de Haas oscillations at high magnetic field. Damping of the Shubnikov de Haas oscillations and disappearance of Landau plateaus after irradiation were related to the degradation in the mobility causing by increasing the scattering at the interface.

Journal Articles

Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments

Abderrahmane, A.*; Koide, Shota*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*; Okada, Hiroshi*

IEEE Transactions on Magnetics, 48(11), p.4421 - 4423, 2012/11

 Times Cited Count:17 Percentile:67.76(Engineering, Electrical & Electronic)

Recent industrial trends indicate increasing demand for Hall effect sensors for monitoring magnetic fields under extreme conditions such as high temperatures and under harmful radiation conditions. In this study, robust and high sensitivity Hall effect sensors using AlGaN/GaN heterostructures with a two-dimensional electron gas at the heterointerface were fabricated, and their magnetic properties were investigated. The AlGaN/GaN 2DEG Hall sensors were stable to at least 400 $$^{circ}$$C and even after irradiation of 380 keV protons at the fluence of 1 $$times$$ 10$$^{14}$$ /cm$$^2$$. The results showed that the AlGaN/GaN 2DEG Hall sensors had superior radiation tolerance to AlGaAs/GaAs and AlInSb/InAsSb/AlInSb magnetic sensors.

Journal Articles

Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-hall sensors

Okada, Hiroshi*; Abderrahmane, A.*; Koide, Shota*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

Journal of Physics; Conference Series, 352, p.012010_1 - 012010_5, 2012/03

 Times Cited Count:5 Percentile:87

4 (Records 1-4 displayed on this page)
  • 1