Refine your search:     
Report No.
 - 
Search Results: Records 1-11 displayed on this page of 11
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Pressure-modulated magnetism and negative thermal expansion in the Ho$$_2$$Fe$$_{17}$$ intermetallic compound

Cao, Y.*; Zhou, H.*; Khmelevskyi, S.*; Lin, K.*; Avdeev, M.*; Wang, C.-W.*; Wang, B.*; Hu, F.*; Kato, Kenichi*; Hattori, Takanori; et al.

Chemistry of Materials, 35(8), p.3249 - 3255, 2023/04

 Times Cited Count:2 Percentile:37.82(Chemistry, Physical)

Hydrostatic and chemical pressure are efficient stimuli to alter the crystal structure and are commonly used for tuning electronic and magnetic properties in materials science. However, chemical pressure is difficult to quantify and a clear correspondence between these two types of pressure is still lacking. Here, we study intermetallic candidates for a permanent magnet with a negative thermal expansion (NTE). Based on in situ synchrotron X-ray diffraction, negative chemical pressure is revealed in Ho$$_2$$Fe$$_{17}$$ on Al doping and quantitatively evaluated by using temperature and pressure dependence of unit cell volume. A combination of magnetization and neutron diffraction measurements also allowed one to compare the effect of chemical pressure on magnetic ordering with that of hydrostatic pressure. Intriguingly, pressure can be used to control suppression and enhancement of NTE. Electronic structure calculations indicate that pressure affected the top of the majority band with respect to the Fermi level, which has implications for the magnetic stability, which in turn plays a critical role in modulating magnetism and NTE. This work presents a good example of understanding the effect of pressure and utilizing it to control properties of functional materials.

Journal Articles

Distinct variation of electronic states due to annealing in $$T'$$-type La$$_{1.8}$$Eu$$_{0.2}$$CuO$$_{4}$$ and Nd$$_{2}$$CuO$$_{4}$$

Asano, Shun*; Ishii, Kenji*; Matsumura, Daiju; Tsuji, Takuya; Kudo, Kota*; Taniguchi, Takanori*; Saito, Shin*; Sunohara, Toshiki*; Kawamata, Takayuki*; Koike, Yoji*; et al.

Physical Review B, 104(21), p.214504_1 - 214504_7, 2021/12

 Times Cited Count:2 Percentile:13.44(Materials Science, Multidisciplinary)

Journal Articles

Resonant inelastic X-ray scattering study of intraband charge excitations in hole-doped high-$$T_c$$ cuprates

Wakimoto, Shuichi; Ishii, Kenji; Kimura, Hiroyuki*; Ikeuchi, Kazuhiko*; Yoshida, Masahiro*; Adachi, Tadashi*; Casa, D.*; Fujita, Masaki*; Fukunaga, Yasushi*; Gog, T.*; et al.

Physical Review B, 87(10), p.104511_1 - 104511_7, 2013/03

 Times Cited Count:10 Percentile:42.20(Materials Science, Multidisciplinary)

Journal Articles

Charge excitations in the stripe-ordered La$$_{5/3}$$Sr$$_{1/3}$$NiO$$_{4}$$ and La$$_{2-x}$$(Ba,Sr)$$_{x}$$CuO$$_{4}$$ superconducting compounds

Wakimoto, Shuichi; Kimura, Hiroyuki*; Ishii, Kenji; Ikeuchi, Kazuhiko; Adachi, Tadashi*; Fujita, Masaki*; Kakurai, Kazuhisa; Koike, Yoji*; Mizuki, Junichiro; Noda, Yukio*; et al.

Physical Review Letters, 102(15), p.157001_1 - 157001_4, 2009/04

 Times Cited Count:25 Percentile:74.50(Physics, Multidisciplinary)

Journal Articles

Characterization and degradation of ZEP520 resist film by TOF-PSID and NEXAFS

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro; Koike, Masaki*

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.453 - 455, 2005/06

 Times Cited Count:17 Percentile:60.67(Spectroscopy)

no abstracts in English

Journal Articles

The 1s-2p resonance photoionization measurement of O$$^{+}$$ ions in comparison with an isoelectronic species Ne$$^{3+}$$

Kawatsura, Kiyoshi*; Yamaoka, Hitoshi*; Oura, Masaki*; Hayaishi, T.*; Sekioka, T.*; Agui, Akane; Yoshigoe, Akitaka; Koike, Fumihiro*

Journal of Physics B; Atomic, Molecular and Optical Physics, 35(20), p.4147 - 4153, 2002/10

 Times Cited Count:21 Percentile:65.00(Optics)

no abstracts in English

Journal Articles

Divertor biasing effects to reduce L/H power threshold in the JFT-2M tokamak

Miura, Yukitoshi; ; ; Hoshino, Katsumichi; ; ; Kasai, Satoshi; Kawakami, Tomohide; Kawashima, Hisato; Maeda, M.*; et al.

Fusion Energy 1996, p.167 - 175, 1997/05

no abstracts in English

Journal Articles

Investigation of causality in the H-L transition on the JFT-2M tokamak

; ; ; ; ; ; ; Oikawa, Toshihiro; ; ; et al.

Fusion Energy 1996, p.885 - 890, 1997/05

no abstracts in English

Oral presentation

Development of the atomic model of Sn and Xe ions and its application to studies of the EUV sources

Sasaki, Akira; Nishihara, Katsunobu*; Sunahara, Atsushi*; Furukawa, Hiroyuki*; Nishikawa, Takeshi*; Koike, Fumihiro*; Murata, Masaki*

no journal, , 

We present calculation of atomic data and development of atomic model of Sn and Xe ions, for the theoretical investigation and optimization of the EUV source for the next generation microlithography. In order to evaluate radiative properties of Sn and Xe ions, measurement of accurate wavelengths of strong emission lines as well as determination of dominant satellite channels from multiply- and inner-shell excited states are essential. We apply database technologies to choose a set of atomic levels, which has significant contribution to the emission. After iterative calculation, an appropriate atomic model which gives reasonable values of coefficients of radiative transfer is obtained.

Oral presentation

Resonant inelastic X-ray scattering study of stripe-ordered La$$_{2-x}$$Sr$$_{x}$$NiO$$_{4}$$ and La$$_{2-x}$$Ba$$_{x}$$CuO$$_{4}$$

Wakimoto, Shuichi; Ishii, Kenji; Ikeuchi, Kazuhiko; Kakurai, Kazuhisa; Mizuki, Junichiro; Kimura, Hiroyuki*; Noda, Yukio*; Adachi, Tadashi*; Koike, Yoji*; Fujita, Masaki*; et al.

no journal, , 

no abstracts in English

Oral presentation

Cu-K edge RIXS study of charge excitations in La$$_{2-x}$$(Sr,Ba)$$_{x}$$CuO$$_{4}$$

Wakimoto, Shuichi; Ishii, Kenji; Kimura, Hiroyuki*; Ikeuchi, Kazuhiko*; Yoshida, Masahiro*; Adachi, Tadashi*; Koike, Yoji*; Fujita, Masaki*; Yamada, Kazuyoshi*; Mizuki, Junichiro

no journal, , 

We performed resonant inelastic X-ray scattering at Cu-K absorption edge to study charge excitations in hole-doped high-Tc cuprate La$$_{2-x}$$(Sr,Ba)$$_{x}$$CuO$$_{4}$$. By subtracting elastic and molecular orbital excitation components from RIXS spectra, we have found dispersing charge excitation below 4 eV. This is the first success of observation of intra-band excitation which reflects dynamical charge-charge correlation function in the hole-doped system.

11 (Records 1-11 displayed on this page)
  • 1