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Journal Articles

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy; Their impact on the degraded charge collection efficiency

Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

Materials Science Forum, 717-720, p.267 - 270, 2012/05

https://doi.org/10.4028/www.scientific.net/MSF.717-720.267
 Times Cited Count：1 Percentile：54.7(Materials Science, Multidisciplinary)

In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p$$^{+}$$n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1$$times$$10$$^{15}$$ /cm$$^{2}$$. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from $$^{241}$$Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X$$_{1}$$ and X$$_{2}$$ are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X$$_{2}$$ is more critical to the charge collection than X$$_{1}$$.

Journal Articles

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p$$^+$$n diode irradiated with high-energy electrons

Iwamoto, Naoya; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*

IEEE Transactions on Nuclear Science, 58(6), p.3328 - 3332, 2011/12

https://doi.org/10.1109/TNS.2011.2167631
 Times Cited Count：5 Percentile：38.65(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Effects of electron irradiation induced defects on the transient charge collections of SiC diodes

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 6H-SiC p$$^+$$n diode by laplace transform DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Observation of negative-U centers in n-type 6H-SiC using laplace DLTS

Koizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Koike, Shumpei*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; et al.

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 4H-SiC p$$^+$$n diode by laplace DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

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