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Nagai, Takayuki; Okamoto, Yoshihiro; Yamagishi, Hirona*; Kojima, Kazuo*; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*
JAEA-Research 2022-008, 37 Pages, 2022/10
JAEA-Research-2022-008.pdf:5.27MB
The local structure of glass-forming elements and waste elements in borosilicate glasses varies with its chemical composition. In this study, borosilicate glass frit and simulated waste glass samples were prepared and the chemical state regarding boron (B), silicon (Si) and waste elements of iron (Fe), cesium (Cs) were estimated by using XAFS measurement in soft X-ray region. Following results were obtained by XAFS measurements of simulated waste glass surfaces after immersion test to investigate the long chemical stability. (1) As the leaching time of glass samples in immersion test passed, the Cs M
, M
-edge XANES spectra disappeared and the Fe L
, L
-edge spectra changed. (2) A new compound was formed on the sample surface after the immersion test, and these changes in the surface state were confirmed by Raman spectroscopy. However, it became difficult to obtain a clear B K-edge XANES spectrum by forming a compound on glass surfaces. The Si K-edge XANES spectra of borosilicate glass frits with different NaO content were measured, and following was confirmed. (1) As the NaO concentration increases in borosilicate glass frit, the K-edge peak of Si shifts to the low energy side. (2) The intensity of the Si K-edge peak is maximum when the NaO content in glass frits was about 7wt%.
Nagai, Takayuki; Okamoto, Yoshihiro; Yamagishi, Hirona*; Ota, Toshiaki*; Kojima, Kazuo*; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*
JAEA-Research 2021-010, 62 Pages, 2022/01
JAEA-Research-2021-010.pdf:6.05MB
The local structure of glass-forming elements and waste elements in borosilicate glasses varies with its chemical composition. In this study, borosilicate glass frit and simulated waste glass samples were prepared and the local structure and chemical state regarding boron(B), oxygen(O), silicon(Si) and waste elements of iron(Fe), cesium(Cs) were estimated by using XAFS measurement in soft X-ray region. Following results were obtained by XAFS measurements of prepared glass frit and simulated waste glass samples: (1) The effect of NaO concentration on B-O coordination structure is greater than that of the waste elements concentration. (2) The height of pre-edge by O K-edge spectrum depends on the concentration of first transition elements such as Fe in glass samples. Following results were obtained by XAFS measurements of simulated waste glass samples after immersion test to investigate the long chemical stability. (1) A new compound was formed on the sample surface after the immersion test, and changes in the surface state were confirmed by Raman spectroscopy. (2) Cs on the sample surface after immersion test dissolves into the leaching solution. The Si K-edge XANES spectra of borosilicate glass frits and simulated waste glass samples included lanthanides oxide were measured, and following was confirmed. (1) As the NaO concentration increases in borosilicate glass frit, the K-edge peak of Si shifts to the low energy side. (2) The peak height of the K-edge of Si differs depending on the kind of lanthanide.
Nagai, Takayuki; Okamoto, Yoshihiro; Yamagishi, Hirona*; Ota, Toshiaki*; Kojima, Kazuo*; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*
JAEA-Research 2020-009, 48 Pages, 2020/09
JAEA-Research-2020-009.pdf:4.53MB
The local structure of glass-forming elements and waste elements in waste glass varies with its chemical composition. In this study, borosilicate glass frit and simulated waste glass samples were prepared and the local structure and chemical state regarding boron (B), oxygen (O), and waste elements of cerium (Ce), cesium (Cs) were estimated by using XAFS measurement in soft X-ray region. Following results were obtained by XAFS measurements of prepared glass frit and simulated waste glass samples: (1) The existence ratio of four coordinate sp
structure (BO) tends to increase with increasing NaO content in glass samples. (2) The height of a pre-edge which appears by K-edge XANES spectrum of O is so high that the Fe content in glass samples. Following results were obtained by XAFS measurements of simulated waste glass samples after immersion test to investigate long chemical stability. (1) The existence ratio of four coordinate sp structure (BO) increases by immersion test. (2) Ce which exists in the surface layer is oxidized by immersion test, and much of Cs in surface layer is lost after leach testing. Even if the glass frit form (fiber cartridge or beads) and manufacturing method were changed and a glass sample of the similar chemical composition was prepared, these observed Raman spectra of samples were different.
Strasser, P.*; Abe, Mitsushi*; Aoki, Masaharu*; Choi, S.*; Fukao, Yoshinori*; Higashi, Yoshitaka*; Higuchi, Takashi*; Iinuma, Hiromi*; Ikedo, Yutaka*; Ishida, Katsuhiko*; et al.
EPJ Web of Conferences, 198, p.00003_1 - 00003_8, 2019/01
Times Cited Count：13 Percentile：99.33Ueno, Yasuhiro*; Aoki, Masaharu*; Fukao, Yoshinori*; Higashi, Yoshitaka*; Higuchi, Takashi*; Iinuma, Hiromi*; Ikedo, Yutaka*; Ishida, Katsuhiko*; Ito, Takashi; Iwasaki, Masahiko*; et al.
Hyperfine Interactions, 238(1), p.14_1 - 14_6, 2017/11
Times Cited Count：3 Percentile：87.03Strasser, P.*; Aoki, Masaharu*; Fukao, Yoshinori*; Higashi, Yoshitaka*; Higuchi, Takashi*; Iinuma, Hiromi*; Ikedo, Yutaka*; Ishida, Katsuhiko*; Ito, Takashi; Iwasaki, Masahiko*; et al.
Hyperfine Interactions, 237(1), p.124_1 - 124_9, 2016/12
Times Cited Count：7 Percentile：92.26
traps in 6H-SiC studied with Laplace deep level transient spectroscopyKoizumi, Atsushi*; Markevich, V. P.*; Iwamoto, Naoya; Sasaki, Sho*; Oshima, Takeshi; Kojima, Kazutoshi*; Kimoto, Tsunenobu*; Uchida, Kazuo*; Nozaki, Shinji*; Hamilton, B.*; et al.
Applied Physics Letters, 102(3), p.032104_1 - 032104_4, 2013/01
Times Cited Count：11 Percentile：45.58(Physics, Applied)Iwamoto, Naoya*; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*
Materials Science Forum, 717-720, p.267 - 270, 2012/05
Times Cited Count：1 Percentile：56.54In this study, we carried out an attempt to identify the defects responsible for the degraded charge collection efficiency of the 6H-SiC p
n diode irradiated with 1 MeV electrons by the alpha particle induced charge transient spectroscopy. To form defects in the SiC crystal, one of the diodes was irradiated with 1 MeV electrons at a fluence of 1
10
/cm
. Collected charges of the diodes were measured in room temperature using 5.486 MeV alpha particles from 
Am source. After the electron irradiation, the collected charge of the diode at a reverse bias of 100 V decreased to 84% of its initial value. In order to investigate the relationship between degradation of collected charge and defects in detail, time-dependent collected charges of the diodes were measured in temperature ranges from 170 K to 310 K. As a result, two distinct peaks labeled X
and X are found for the electron-irradiated diode, and their activation energies are estimated to be 0.30 and 0.47 eV, respectively. These two peaks are considered to correspond to the defect levels introduced by the electron irradiation. In particular, when the diodes are used in room temperature, X is more critical to the charge collection than X.
n diode irradiated with high-energy electronsIwamoto, Naoya; Koizumi, Atsushi*; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koike, Shumpei*; Uchida, Kazuo*; Nozaki, Shinji*
IEEE Transactions on Nuclear Science, 58(6), p.3328 - 3332, 2011/12
Times Cited Count：5 Percentile：39.92(Engineering, Electrical & Electronic)no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*
IEEE Transactions on Nuclear Science, 58(1), p.305 - 313, 2011/02
Times Cited Count：9 Percentile：58.76(Engineering, Electrical & Electronic)no abstracts in English
n diodes measured using alpha particlesIwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.222 - 225, 2010/10
N diodes degraded by low-energy electron irradiationIwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*
Materials Science Forum, 645-648, p.921 - 924, 2010/00
Electron irradiation effects on the charge collection efficiency (CCE) of the 6H-SiC pn diodes were investigated. The diodes were irradiated with electrons at energies from 100 keV to 1 MeV. The value of CCE of the diodes using alpha particles compared before and after the electron irradiations. In the case of 100 keV electron, no significant change in CCE was observed. On the other hand, above 200 keV, the values of CCE decreased with increasing fluence. The degradation was larger with increasing incident electron energy.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V
) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I
) - drain voltage (V) curves are 230 cm/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V
) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Kasahara, Mikio*; Ma, C.-J.*; Okumura, Motonori*; Kojima, Takuji; Hakoda, Teruyuki; Sakai, Takuro; Arakawa, Kazuo
JAERI-Review 2003-033, TIARA Annual Report 2002, p.270 - 272, 2003/11
A snow crystal scavenges earozol particles and trasfer various elements in atomosphere through heterogenious nucleation. The snow has many complicated crystal shapes which results in difficulty in comparison of its environmental purification function directly with that of raindrops. The replica of individual snow crystal grain was prepared by their immobilization on the collodion film. The replica samples were analized by micro-PIXE at JAERI and PIXE st Kyoto university. The following results are obtained: (1) Size(circumscribed diameter) of individual snow crystal are in the range of 0.12-2.5mm, (2)snow crystal grows from hexagnal plate to dendritic sectored plate, (3) major elements captured by a snow crystal are Si,S,K,Ca,Fe,S, (4)there is relation between snow crystal size and captured-element masses. The result leads us to presume the chemical inner-structure and the elemental mixing state in/on single snow crystal.
Ishii, Yasuyuki; Isoya, Akira*; Kojima, Takuji; Arakawa, Kazuo
Nuclear Instruments and Methods in Physics Research B, 211(3), p.415 - 424, 2003/11
Times Cited Count：17 Percentile：73.37(Instruments & Instrumentation)A beam width measurement system has been developed for keV submicron ion beams of 0.1 
m or less in width assuming a round shape beam. The system enables to measure beam current change as a function of knife-edge position by cutting a beam focusing point (beam spot) with the sharp edge within a spatial resolution of 0.02 m. The width of 30 keV order submicron 
ion beam was estimated by fitting current change curves based on three different ion density models: uniform, flat-top and Gaussian. Among these models, the flat-top model provide the most reasonable beam width of 0.56 m interpreting contribution of halo around the beam spot to beam width estimation. The beam width measurement system with the high spatial resolution and the data analysis based on the flat-top ion density model should contribute to accelerate developments of submicron ion beam production technologies.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count：39 Percentile：77.8(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100
C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
Ishii, Yasuyuki; Isoya, Akira*; Arakawa, Kazuo; Kojima, Takuji; Tanaka, Ryuichi*
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.71 - 77, 2001/07
Times Cited Count：13 Percentile：67.56(Instruments & Instrumentation)no abstracts in English
Yamaguchi, Mitsutaka; Kawachi, Naoki; Watanabe, Shigeki; Sato, Takahiro; Arakawa, Kazuo; Kojima, Takuji; Kamiya, Tomihiro; Watanabe, Shin*; Takeda, Shinichiro*; Odaka, Hirokazu*; et al.
no journal, ,
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*
no journal, ,
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*
no journal, ,
no abstracts in English
