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Komagata, Eiichi*; Kawasuso, Atsuo; Yabuuchi, Atsushi*; Maekawa, Masaki; Batchuluun, C.*; Yasuda, Keisuke*; Ishigami, Ryoya*; Kume, Kyo*; Iwase, Akihiro*; Hori, Fuminobu*
Physics Procedia, 35, p.75 - 79, 2012/00
Times Cited Count:2 Percentile:62.57Fe48-at.% Al alloy were implanted with 50 keV H ions to the fluence of 310 and 110 /cm at room temperature. Positron annihilation Doppler broadening and lifetime measurements for these alloys have been carried out using slow positron beam apparatus with an energy range of 0.2 to 30.2 keV. The positron annihilation S-parameter decreased by H ion irradiation. Also the positron lifetimes for hydrogen deposited region in the alloy decreased by the irradiation. These results show that implanted H atoms were trapped by vacancy type defects.