Excited states above the proton threshold in Si

Komatsubara, Tetsuro*; Kubono, Shigeru*; Hayakawa, Takehito; Shizuma, Toshiyuki; Osawa, Akira*; Ito, Yuta*; Ishibashi, Yoko*; Moriguchi, Tetsuro*; Yamaguchi, Hidetoshi*; Kahl, D.*; et al.

European Physical Journal A, 50, p.136_1 - 136_9, 2014/09

https://doi.org/10.1140/epja/i2014-14136-4

The level scheme above the proton threshold in Si is crucial for evaluating the Al(p,)Si stellar reaction, which is important for understanding the astrophysical origin of the long-lived cosmic radioactivity Al(T=7.1710 y) in the Galaxy. The excited states in Si have been studied using an in-beam -ray spectroscopy technique with the Mg(He,n)Si reaction. The spin-parity of one of the most important states reported recently at 5890.0 keV has been assigned as 0 by - angular correlation measurements.

Spins and parities of astrophysically important S states from Si(He, )S

Setoodehnia, K.*; Chen, A. A.*; Komatsubara, Tetsuro*; Kubono, Shigeru*; Binh, D. N.*; Carpino, J. F.*; Chen, J.*; Hashimoto, Takashi*; Hayakawa, Takehito; Ishibashi, Yoko*; et al.

Physical Review C, 83(1), p.018803_1 - 018803_4, 2011/01

https://doi.org/10.1103/PhysRevC.83.018803

The structure of proton-unbound S states strongly determines the thermonuclear P(, )S reaction rate at temperatures characteristic of explosive hydrogen burning in classical novae and type I X-ray bursts. Specifically, the rate had been previously predicted to be dominated by two low-lying, unobserved, levels in the =4.7-4.8 MeV region, with spin and parity assignments of 3 and 2. In recent experimental work, two candidate levels were observed with energies of 4.699 MeV and 4.814 MeV, but no experimental information on their spins and parities was obtained. We have performed an in-beam -ray spectroscopy study of S with the Si(He, )S reaction. The spin and parities were inferred from a comparison to the known decay schemes of the corresponding mirror states.

4-derived Fermi surfaces of CeRu(SiGe) near the quantum critical point; Resonant soft-X-ray ARPES study

Okane, Tetsuo; Okochi, Takuo*; Takeda, Yukiharu; Fujimori, Shinichi; Yasui, Akira; Saito, Yuji; Yamagami, Hiroshi; Fujimori, Atsushi; Matsumoto, Yuji*; Sugi, Motoki*; et al.

Physical Review Letters, 102(21), p.216401_1 - 216401_4, 2009/05

https://doi.org/10.1103/PhysRevLett.102.216401

Fabrication of silicon-vacancy center array in diamond by low-energy single-ion implantation

Tamura, Shuto*; Komatsubara, Akira*; Teraji, Tokuyuki*; Onoda, Shinobu; McGuinness, L.*; Jelezko, F.*; Rogers, L.*; Oshima, Takeshi; Isoya, Junichi*; Shinada, Takahiro*; et al.

no journal, , 

no abstracts in English

Fabrication of the ordered array of optical centers in diamond by low energy ion implantation

Komatsubara, Akira*; Teraji, Tokuyuki*; Hori, Masahiro*; Kumagai, Kuninori*; Tamura, Shuto*; Oshima, Takeshi; Onoda, Shinobu; Yamamoto, Takashi; Muller, C.*; Naydenov, B.*; et al.

no journal, , 

no abstracts in English

Fabrication of the ordered array of optical centers in diamond by low energy ion implantation, 2

Tamura, Shuto*; Komatsubara, Akira*; Teraji, Tokuyuki*; Onoda, Shinobu; Oshima, Takeshi; Christoph, M.*; Naydenov, B.*; McGuinness, L.*; Jelezko, F.*; Shinada, Takahiro*; et al.

no journal, , 

no abstracts in English